To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi-mode interference (MMI) Mach-Zehnder interferometer (MZI)-based electro-optic (EO) switch is desig...To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi-mode interference (MMI) Mach-Zehnder interferometer (MZI)-based electro-optic (EO) switch is designed and optimized. Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and ±1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 ?. The manufacture tolerance is analyzed for instructing the device fabrication. The results show that to realize ideal switching function, high fabrication accuracy on the buffer thickness, core thickness, electrode width and MMI waveguide width is extremely required, and a small voltage drift of-0.03-0.05 V is also expected for reducing the crosstalk to less than-30 dB. The allowed 3 dB bandwidth is 60 nm, and within this spectrum range, the insertion loss and crosstalk are less than 6.71 dB and-30 dB, respectively.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 60706011, 60807029, and 61077041)the Fund of Ministry of Education of China (Nos. 20070183087 and 20090061110041)+1 种基金the Science and Technology Fund of Jilin Province of China (No.20080125)the National Basic Research Development Program of China (No. 2006CB302803)
文摘To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi-mode interference (MMI) Mach-Zehnder interferometer (MZI)-based electro-optic (EO) switch is designed and optimized. Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and ±1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 ?. The manufacture tolerance is analyzed for instructing the device fabrication. The results show that to realize ideal switching function, high fabrication accuracy on the buffer thickness, core thickness, electrode width and MMI waveguide width is extremely required, and a small voltage drift of-0.03-0.05 V is also expected for reducing the crosstalk to less than-30 dB. The allowed 3 dB bandwidth is 60 nm, and within this spectrum range, the insertion loss and crosstalk are less than 6.71 dB and-30 dB, respectively.
