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半导体薄膜自身的力敏参数的测量
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作者 许德华 祝冰 梁癸容 《半导体杂志》 1995年第4期33-36,共4页
半导体薄膜已用于力敏传感器。薄膜自身的力敏参数的测量是很必要的。但迄今只能得到薄膜与其衬底基片结合一体的复合样品测量值,因为很难把薄膜完好剥离下来,剥下的薄膜又不易测量。本文提出新的算法和公式。在淀积薄膜之前和之后,... 半导体薄膜已用于力敏传感器。薄膜自身的力敏参数的测量是很必要的。但迄今只能得到薄膜与其衬底基片结合一体的复合样品测量值,因为很难把薄膜完好剥离下来,剥下的薄膜又不易测量。本文提出新的算法和公式。在淀积薄膜之前和之后,两次作常规测量.就可算出纯膜自身的参数。 展开更多
关键词 半导体淀积膜 传感器 力敏参数
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化学汽相淀积多晶硅
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作者 李添臣 《微电子学》 CAS 1973年第4期1-9,共9页
半导体器件工艺中多晶硅膜的应用越来越广泛。本德等人首先描述了单晶器件介质隔离用的厚多晶硅膜的热传导。最近在制作场效应晶体管(FET)的自对准栅法中采用了多晶硅做栅。在本文发表之前,范等人关于在多晶硅膜中制作相当好FET的报导,... 半导体器件工艺中多晶硅膜的应用越来越广泛。本德等人首先描述了单晶器件介质隔离用的厚多晶硅膜的热传导。最近在制作场效应晶体管(FET)的自对准栅法中采用了多晶硅做栅。在本文发表之前,范等人关于在多晶硅膜中制作相当好FET的报导,使多晶硅纳入有源器件材料。当然,在要求高速度和高封装密度的应用中,多晶硅绝比不上单晶硅器件。但是要求大面积上制作器件和不能用单晶衬底的应用中多晶硅器件则可以满足需要。 展开更多
关键词 迁移率 多晶硅 掺杂剂 晶粒间界 晶界 面缺陷 载流子浓度 载流子密度 晶体尺寸 结构缺陷 掺杂浓度 晶粒尺寸 晶粒度 晶粒规格 淀积膜 多晶硅薄 衬底 基片 硅烷 有机硅化合物
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准分子激光化学反应淀积硫化物薄膜 被引量:3
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作者 席明霞 武四新 +4 位作者 郑隽 吴正亮 李缙 赵国珍 曹基文 《中国激光》 EI CAS CSCD 北大核心 1997年第8期760-764,共5页
提出了一种新的激光光化学三元反应体系,用于制备硫化铅薄膜。应用吸收光谱、扫描电镜和X射线光电子能谱等测试手段研究了膜的性质和组成,指出了该方法淀积硫化物薄膜的可行性。
关键词 化学气相 淀积膜 激光光化学
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MoS_x FILMS DEPOSITED ON DIFFERENT MATRIXES BY ION BEAM TECHNIQUE
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作者 王培禄 刘仲阳 +2 位作者 姜景云 苟富均 杨兴富 《Nuclear Science and Techniques》 SCIE CAS CSCD 1995年第3期178-182,共5页
MoSx (x = 1.79  ̄ 2.34) films of 200 nm thickness are deposited onto brass and C20 steel substrates by the ion beam assisted technique, respectively. Structures and compositions of these films, and changes in valence ... MoSx (x = 1.79  ̄ 2.34) films of 200 nm thickness are deposited onto brass and C20 steel substrates by the ion beam assisted technique, respectively. Structures and compositions of these films, and changes in valence states of the Mo element are examined by XRD and XPS before and after wear. The lubrication properties and wear resistances for two kinds of samples are evaluated using a pin-on-disk installation in atmosphere at the room temperature. Tribo-wear behaviours and the microstructures between two kinds of samples exhibit obvious differences. 展开更多
关键词 Molybdenum disulphide Ion beam assisted deposition FRICTION WEAR
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Electrodeposition and Characterization of ZnO Thin Films
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作者 HUANG Yan-wei YAO Ning ZHANG bing-lin 《Semiconductor Photonics and Technology》 CAS 2007年第3期210-214,共5页
Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3 )2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph (SEM) ind... Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3 )2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph (SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared ZnO films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2 × 102 cd/m^2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor. 展开更多
关键词 ELECTRODEPOSITION ZnO thin films PHOTOLUMINESCENCE cathode-luminescence field emission PHOSPHOR
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