A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimi...A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.展开更多
This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass （SOG） structures in t...This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass （SOG） structures in the deep reactive ion etching （DRIE） process. Experiments with gap heights of 5,20, and 50μm were carried out for performance comparison of the footing effect. Also,two kinds of silicon wafers with resistivity of 2-4 and 0.01-0. 0312Ω· cm were used for the exploration. The results show that structures with resistivity of 0.01 - 0. 0312Ω· cm have better topography than those with resistivity of 2-4Ω· cm; and structures with 50μm-high gaps between silicon structures and glass substrate suffer some- what less of a footing effect than those with 20μm-high gaps,and much less than those with Stem-high gaps. Our theoretical analysis indicates that either the higher conductivity of the silicon wafer or a larger gap height between silicon structures and glass substrate can suppress footing effects. The results can contribute to the choice of silicon type and optimum design for many microsensors.展开更多
By applying the specific properties and the fabricating technology of the deep etched elements presented by us, the even device of deep etched binary optics has been designed and fabricated which can be used in quasi-...By applying the specific properties and the fabricating technology of the deep etched elements presented by us, the even device of deep etched binary optics has been designed and fabricated which can be used in quasi-molecule laser exposure system. This even device is light in weight, easy to adjust and has a high utilization rate of energy and is able to project well-distributed light beams. So it is better than the conventional one which was an array made up of quartz sticks. The properties and designed parameters were studied and simulated. The fabricated even was precisely tested by high precision Alpha-Steper. The testing result of the surface relief structures of the even has been profoundly analyzed by introducing “boundary errors”. The theory agrees well with the results of the experiment. This is the first successful application of the deep etched theory and technology of binary optics to the exposure system of microfabrication.展开更多
Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide （D...Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide （DE-RW） structure from biosensing perspective. With this rib structure, an asymmetrically etched integrated optic directional coupler has been numerically modeled to have the same coupling length for quasi- TE and TM modes. The coupling coefficients with the glucose solution as an upper cladding were calculated using a full vector mode solver, and the bulk refractive index sensitivity of the sensor was found as 28.305 × 10^-2/RIU for a fundamental quasi-TE mode.展开更多
A novel symmetrical chirped beam splitter based on a binary blazed grating is proposed, which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and conven...A novel symmetrical chirped beam splitter based on a binary blazed grating is proposed, which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and convenient for integration and manufacture process. This structure can realize nearly equal-power splitting operation under the condition of TE polarization incidence. When the absolutely normal incidence occurs at the wavelength of 1580 nm, the coupling efficiencies of the left and the right branches are 43.627% and 43.753%, respectively. Moreover, this structure has the tolerances of 20 nm in etched depth and 3?in incident angle, which is rather convenient to manufacture facility.展开更多
A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented,which takes advantage of the lag effect in silicon DRIE(deep reactive ion etching).The wide trenches and the releasi...A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented,which takes advantage of the lag effect in silicon DRIE(deep reactive ion etching).The wide trenches and the releasing holes are etched to the buried oxide in the first-step DRIE whereas the narrow trenches are still connected due to the lag effect.After the buried oxide is removed by wet etching through the opened releasing holes and wide trenches,the narrow trenches are etched through by the second-step DRIE.Not only can the sticking problems be avoided,but also the footing effect during the DRIE can be partially suppressed.The feasibility of the proposed technique was verified by implementing a capacitive accelerometer.The scale factor and the non-linearity of the fabricated accelerometer were measured to be 63.4 mV/g and 0.1% with the measurement range of ±1 g,respectively.展开更多
文摘A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.
文摘This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass （SOG） structures in the deep reactive ion etching （DRIE） process. Experiments with gap heights of 5,20, and 50μm were carried out for performance comparison of the footing effect. Also,two kinds of silicon wafers with resistivity of 2-4 and 0.01-0. 0312Ω· cm were used for the exploration. The results show that structures with resistivity of 0.01 - 0. 0312Ω· cm have better topography than those with resistivity of 2-4Ω· cm; and structures with 50μm-high gaps between silicon structures and glass substrate suffer some- what less of a footing effect than those with 20μm-high gaps,and much less than those with Stem-high gaps. Our theoretical analysis indicates that either the higher conductivity of the silicon wafer or a larger gap height between silicon structures and glass substrate can suppress footing effects. The results can contribute to the choice of silicon type and optimum design for many microsensors.
基金This work was supported by the National Natural Science Founation of China the Science and Technology Fund of Shenzhen.
文摘By applying the specific properties and the fabricating technology of the deep etched elements presented by us, the even device of deep etched binary optics has been designed and fabricated which can be used in quasi-molecule laser exposure system. This even device is light in weight, easy to adjust and has a high utilization rate of energy and is able to project well-distributed light beams. So it is better than the conventional one which was an array made up of quartz sticks. The properties and designed parameters were studied and simulated. The fabricated even was precisely tested by high precision Alpha-Steper. The testing result of the surface relief structures of the even has been profoundly analyzed by introducing “boundary errors”. The theory agrees well with the results of the experiment. This is the first successful application of the deep etched theory and technology of binary optics to the exposure system of microfabrication.
文摘Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide （DE-RW） structure from biosensing perspective. With this rib structure, an asymmetrically etched integrated optic directional coupler has been numerically modeled to have the same coupling length for quasi- TE and TM modes. The coupling coefficients with the glucose solution as an upper cladding were calculated using a full vector mode solver, and the bulk refractive index sensitivity of the sensor was found as 28.305 × 10^-2/RIU for a fundamental quasi-TE mode.
基金supported by the National Natural Science Foundation of China (No.60907003)
文摘A novel symmetrical chirped beam splitter based on a binary blazed grating is proposed, which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and convenient for integration and manufacture process. This structure can realize nearly equal-power splitting operation under the condition of TE polarization incidence. When the absolutely normal incidence occurs at the wavelength of 1580 nm, the coupling efficiencies of the left and the right branches are 43.627% and 43.753%, respectively. Moreover, this structure has the tolerances of 20 nm in etched depth and 3?in incident angle, which is rather convenient to manufacture facility.
基金supported by the National Natural Science Foundation of China (Grant No. 90923037)
文摘A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices is presented,which takes advantage of the lag effect in silicon DRIE(deep reactive ion etching).The wide trenches and the releasing holes are etched to the buried oxide in the first-step DRIE whereas the narrow trenches are still connected due to the lag effect.After the buried oxide is removed by wet etching through the opened releasing holes and wide trenches,the narrow trenches are etched through by the second-step DRIE.Not only can the sticking problems be avoided,but also the footing effect during the DRIE can be partially suppressed.The feasibility of the proposed technique was verified by implementing a capacitive accelerometer.The scale factor and the non-linearity of the fabricated accelerometer were measured to be 63.4 mV/g and 0.1% with the measurement range of ±1 g,respectively.
