An alternative method for SU-8 removal is proposed.Instead of directly using SU-8 microstructure as the electroplating mold,a polydimethysiloxane (PDMS) replica is employed.The metallic micromold insert obtained throu...An alternative method for SU-8 removal is proposed.Instead of directly using SU-8 microstructure as the electroplating mold,a polydimethysiloxane (PDMS) replica is employed.The metallic micromold insert obtained through this method can be easily peeled off from the PDMS replica,meanwhile with high resolution and smooth surfaces.展开更多
Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multi...Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multilevel cell(MLC)operation,potentially causing thermal crosstalk issues and phase separation issues,respectively.To address these challenges,we propose a high-aspect-ratio(25:1)lateral nanowire(NW)PCM device with conventional chalcogenide Ge_(2)Sb_(2)Te_(5)(GST-225)to realize stable MLC operations,i.e.,low intra-and inter-cell variability and low resistance drift(coefficient=0.009).The improved MLC performance is attributed to the high aspect ratio,which enables precise control of the amorphous region because of sidewall confinement,as confirmed by transmission electron microscopy analysis.In summary,the NW devices provide guidance for the design of future high-aspect-ratio threedimensional PCM devices with MLC capability.展开更多
文摘An alternative method for SU-8 removal is proposed.Instead of directly using SU-8 microstructure as the electroplating mold,a polydimethysiloxane (PDMS) replica is employed.The metallic micromold insert obtained through this method can be easily peeled off from the PDMS replica,meanwhile with high resolution and smooth surfaces.
基金supported by the National Natural Science Foundation of China(62174065)the Key Research and Development Plan of Hubei Province(2020BAB007)+1 种基金Hubei Provincial Natural Science Foundation(2021CFA038)the support from Hubei Key Laboratory of Advanced Memories&Hubei Engineering Research Center on Microelectronics。
文摘Further improvement of storage density is a key challenge for the application of phase-change memory(PCM)in storage-class memory.However,for PCM,storage density improvements include feature size scaling down and multilevel cell(MLC)operation,potentially causing thermal crosstalk issues and phase separation issues,respectively.To address these challenges,we propose a high-aspect-ratio(25:1)lateral nanowire(NW)PCM device with conventional chalcogenide Ge_(2)Sb_(2)Te_(5)(GST-225)to realize stable MLC operations,i.e.,low intra-and inter-cell variability and low resistance drift(coefficient=0.009).The improved MLC performance is attributed to the high aspect ratio,which enables precise control of the amorphous region because of sidewall confinement,as confirmed by transmission electron microscopy analysis.In summary,the NW devices provide guidance for the design of future high-aspect-ratio threedimensional PCM devices with MLC capability.
