The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire （Al2O3） （0001） and （1120） substrates are studied. For the former,the effects of two import...The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire （Al2O3） （0001） and （1120） substrates are studied. For the former,the effects of two important growth parameters,i, e. temperature and pressure, are investigated in detail. Due to the large lattice mismatch between the film and the substrate, ZnO nanocrystals are usually obtained. The growth behavior at the film-substrate interface is found to be strongly dependent on the growth temperature,while the growth pressure determines the shape of the nanostructures as they grow. It is difficult to obtain ZnO films that have good quality and a smooth surface simultaneously. Due to the smaller lattice mismatch,the critical thickness of ZnO on the Al2O3 （1120） surface is found to be much larger than that on the Al2O3 （0001） surface. ZnO/MgZnO quantum wells with graded well thicknesses are grown on the Al2O3 （1120） surfaces,and their optical properties are studied. The built-in electric field in the well layer, generated by the piezoelectric effect, is estimated to be 3 × 10^5 V/cm. It is found that growth at low temperatures and low pressures may facilitate the incorporation of acceptor impurities in ZnO.展开更多
Apatite-lanthanum silicate has attracted considerable interest in recent years due to its high oxide ion conductivity.In this paper,V-doped samples La10-xVx(SiO4) 6O3+x(0≤x≤1.5) were prepared by sol-gel method and t...Apatite-lanthanum silicate has attracted considerable interest in recent years due to its high oxide ion conductivity.In this paper,V-doped samples La10-xVx(SiO4) 6O3+x(0≤x≤1.5) were prepared by sol-gel method and the influences of V-dopant content on calcining temperature and conductivity were reported.The samples were characterized by thermal analysis(TG-DSC) ,X-ray diffraction(XRD) and scanning electron micrograph(SEM) . The apatite was obtained at 800°C,a relatively low temperature in comparison to 1500°C with the conventional solid-state method.The ceramic pellets sintered at 1200°C for 5 h showed a higher relative density than La9.33Si6O26 pellets sintered at 1400°C for 20 h.The conductivities of samples were measured by electrochemical impedance spectroscopy.The conductivity was improved with the increase of V-dopant content on La site.展开更多
文摘The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire （Al2O3） （0001） and （1120） substrates are studied. For the former,the effects of two important growth parameters,i, e. temperature and pressure, are investigated in detail. Due to the large lattice mismatch between the film and the substrate, ZnO nanocrystals are usually obtained. The growth behavior at the film-substrate interface is found to be strongly dependent on the growth temperature,while the growth pressure determines the shape of the nanostructures as they grow. It is difficult to obtain ZnO films that have good quality and a smooth surface simultaneously. Due to the smaller lattice mismatch,the critical thickness of ZnO on the Al2O3 （1120） surface is found to be much larger than that on the Al2O3 （0001） surface. ZnO/MgZnO quantum wells with graded well thicknesses are grown on the Al2O3 （1120） surfaces,and their optical properties are studied. The built-in electric field in the well layer, generated by the piezoelectric effect, is estimated to be 3 × 10^5 V/cm. It is found that growth at low temperatures and low pressures may facilitate the incorporation of acceptor impurities in ZnO.
基金Supported by the Joint Funds of NSFC-Guangdong of China(U0834004)the Natural Science Foundation of Guangdong Province(06025657)
文摘Apatite-lanthanum silicate has attracted considerable interest in recent years due to its high oxide ion conductivity.In this paper,V-doped samples La10-xVx(SiO4) 6O3+x(0≤x≤1.5) were prepared by sol-gel method and the influences of V-dopant content on calcining temperature and conductivity were reported.The samples were characterized by thermal analysis(TG-DSC) ,X-ray diffraction(XRD) and scanning electron micrograph(SEM) . The apatite was obtained at 800°C,a relatively low temperature in comparison to 1500°C with the conventional solid-state method.The ceramic pellets sintered at 1200°C for 5 h showed a higher relative density than La9.33Si6O26 pellets sintered at 1400°C for 20 h.The conductivities of samples were measured by electrochemical impedance spectroscopy.The conductivity was improved with the increase of V-dopant content on La site.
