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UMOSFET功率器件漏电失效分析及工艺改善
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作者 李秀然 刘宇 +2 位作者 王鹏 李秀莹 沈思杰 《半导体技术》 CAS CSCD 北大核心 2018年第8期627-632,共6页
针对U型沟槽MOSFET(UMOSFET)功率器件栅极和源极间发生漏电失效的问题,对失效器件进行了电学测试和缺陷检测,对失效现象和失效机理进行了分析,并进行了相关工艺模拟和工艺实验。采用透射电子显微镜(TEM)、扫描电子显微镜(SEM)和... 针对U型沟槽MOSFET(UMOSFET)功率器件栅极和源极间发生漏电失效的问题,对失效器件进行了电学测试和缺陷检测,对失效现象和失效机理进行了分析,并进行了相关工艺模拟和工艺实验。采用透射电子显微镜(TEM)、扫描电子显微镜(SEM)和聚焦离子束(FIB)对失效芯片的缺陷进行分析和表征。结果表明,器件的U型沟槽底部栅氧化层存在的缺陷是产生漏电的主要原因,湿氧工艺中反应气体反式二氯乙烯(TransLC)的残留碳化造成了芯片栅氧层中的缺陷。通过工艺模拟和实验,优化了湿氧工艺条件,工艺改进后产品的成品率稳定在98%~99%,无漏电失效现象。 展开更多
关键词 U型沟槽MOSFET(UMOSFET) 漏电失效 湿氧工艺 化层 反式二氯乙烯(Trans_LC)
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Statistical evaluation and optimization of zinc electrolyte hot purification process by Taguchi method 被引量:3
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作者 Bahram Behnajady Javad Moghaddam 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第6期2066-2072,共7页
The neutral zinc sulfate solution obtained from hydrometallurgical process of Angouran zinc concentrate has cadmium, nickel and cobalt impurities, that must be purified before electrowinning. Therefore, cadmium and ni... The neutral zinc sulfate solution obtained from hydrometallurgical process of Angouran zinc concentrate has cadmium, nickel and cobalt impurities, that must be purified before electrowinning. Therefore, cadmium and nickel are usually cemented out by addition of zinc dust and remained nickel and cobalt cemented out at second stage with zinc powder and arsenic trioxide. In this research, a new approach is described for determination of effective parameters and optimization of zinc electrolyte hot purification process using statistical design of experiments. The Taguchi method based on orthogonal array design(OAD) has been used to arrange the experimental runs. The experimental conditions involved in the work are as follows: the temperature range of 70-90 ℃ for reaction temperature(T), 30-90 min for reaction time(t), 2-4 g/L for zinc powder mass concentration(M), one to five series for zinc dust particle size distributions(S1-S5), and 0.1-0.5 g/L(C) for arsenic trioxide mass concentration. Optimum conditions for hot purification obtained in this work are T4(85 ℃), t4=75 min, M4=3.5 g/L, S4(Serie 4), and C2=0.2 g/L. 展开更多
关键词 taguchi method hot purification NICKEL COBALT arsenic trioxide
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Photocatalytic oxidation of nitric oxide from simulated flue gas by wet scrubbing using ultraviolet/TiO_2/H_2O_2 process 被引量:2
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作者 张波 仲兆平 付宗明 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第1期82-87,共6页
Nitric oxide(NO) from flue gas is hard to remove because of low solubility and reactivity. A new technology for photocatalytic oxidation of NO using ultraviolet(UV)/TiO2/H2O2 process is studied in an efficient laborat... Nitric oxide(NO) from flue gas is hard to remove because of low solubility and reactivity. A new technology for photocatalytic oxidation of NO using ultraviolet(UV)/TiO2/H2O2 process is studied in an efficient laboratory-scale reactor. Effects of several key operational parameters on NO removal efficiency are studied, including TiO2 content, H2O2 initial concentration, UV lamp power, NO initial content, oxygen volume fraction and TiO2/H2O2 solution volume. The results illustrate that the NO removal efficiency increases with the increasing of H2O2 initial concentration or UV lamp power. Meanwhile, a lower NO initial content or a higher TiO2/H2O2 solution volume will result in higher NO removal efficiency. In addition, oxygen volume fraction has a little effect.The highest NO removal efficiency is achieved at the TiO2 content of 0.75 g/L, H2O2 initial concentration of 2.5 mol/L, UV lamp power of 36 W, NO initial content of 206×10-6 and TiO2/H2O2 solution volume of 600 m L. It is beneficial for the development and application of NO removal from coal-fired flue gas with UV/TiO2/H2O2 process. 展开更多
关键词 photocatalytic oxidation nitric oxide UV/TiO2/H2O2 process
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