CrN coatings were deposited on Si(100) and piston rings by ion source assisted 40 kHz magnetron sputtering.Structure and composition of the coatings were characterized by X-ray diffraction,atomic force microscopy,scan...CrN coatings were deposited on Si(100) and piston rings by ion source assisted 40 kHz magnetron sputtering.Structure and composition of the coatings were characterized by X-ray diffraction,atomic force microscopy,scanning electron microscopy and transmission electron microscopy.Mechanical and tribological properties were assessed by microhardness and pin-on-disc testing.The ion source-assisted system has a deposition rate of 3.88 μm/h,against 2.2 μm/h without ion-source assistance.The CrN coatings prepared with ion source assistance exhibited an increase in microhardness(up to 16.3 GPa) and decrease in friction coefficient(down to 0.48) at the optimized cathode source-to-substrate distance.Under optimized conditions,CrN coatings were deposited on piston rings,with a thickness of 25 μm and hardness of 17.85 GPa.展开更多
The effects of plasma (ions, electrons) and other energetic particles are now widely used for substrate cleaning as well as to assist and control thin film growth and various applications. In this work, historical r...The effects of plasma (ions, electrons) and other energetic particles are now widely used for substrate cleaning as well as to assist and control thin film growth and various applications. In this work, historical review of the plasma and its various types are given and described. Different types of gas discharge and plasma production are also discussed in detail. Furthermore, technique of ion beam extraction from a plasma source for sputtering process by using a suitable electrode is carefully studied and given. In further consequence, a general review about the physics and mechanism of sputtering processes is studied. Different types of sputtering techniques are investigated and clarified. Theoretical treatment for determination of sputtering yield for low and high atomic species elements as a function of energy from 100 to 5,000 eV are studied and discussed. Finally, various applications of plasma-and-ion beam sputtering will also be mentioned and discussed.展开更多
基金Supported by the Ministry of Industry and Information Technology (No. 2009ZX04012-032)
文摘CrN coatings were deposited on Si(100) and piston rings by ion source assisted 40 kHz magnetron sputtering.Structure and composition of the coatings were characterized by X-ray diffraction,atomic force microscopy,scanning electron microscopy and transmission electron microscopy.Mechanical and tribological properties were assessed by microhardness and pin-on-disc testing.The ion source-assisted system has a deposition rate of 3.88 μm/h,against 2.2 μm/h without ion-source assistance.The CrN coatings prepared with ion source assistance exhibited an increase in microhardness(up to 16.3 GPa) and decrease in friction coefficient(down to 0.48) at the optimized cathode source-to-substrate distance.Under optimized conditions,CrN coatings were deposited on piston rings,with a thickness of 25 μm and hardness of 17.85 GPa.
文摘The effects of plasma (ions, electrons) and other energetic particles are now widely used for substrate cleaning as well as to assist and control thin film growth and various applications. In this work, historical review of the plasma and its various types are given and described. Different types of gas discharge and plasma production are also discussed in detail. Furthermore, technique of ion beam extraction from a plasma source for sputtering process by using a suitable electrode is carefully studied and given. In further consequence, a general review about the physics and mechanism of sputtering processes is studied. Different types of sputtering techniques are investigated and clarified. Theoretical treatment for determination of sputtering yield for low and high atomic species elements as a function of energy from 100 to 5,000 eV are studied and discussed. Finally, various applications of plasma-and-ion beam sputtering will also be mentioned and discussed.