Growth and crystallization of titanium anodized films were studied by performing the anodization of the sputter-deposited titanium samples under cyclic voltammetry （CV） mode at very low potentials. The surface featu...Growth and crystallization of titanium anodized films were studied by performing the anodization of the sputter-deposited titanium samples under cyclic voltammetry （CV） mode at very low potentials. The surface features, crystalline behaviors and chemical compositions of the formed anodic oxide layers were detected by AFM, SE and XPS. It was found that the structure of the titanium anodized films is crystalline, even though the maximum oxidation potential （（Pmax） is very low （as low as 1000 mY）. Both enlarging the applied voltage and reducing the potential scanning rate are beneficial for the growth and crystallization of titanium oxide films. It was thought that the internal compressive stress, other than the local joule heating accepted for many researchers, is the main force of stimulating the crystallization of anodic titanium oxide films at very low potentials.展开更多
Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was empl...Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.展开更多
Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic prope...Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.展开更多
基金Project(20976058)supported by the National Natural Science Foundation of China
文摘Growth and crystallization of titanium anodized films were studied by performing the anodization of the sputter-deposited titanium samples under cyclic voltammetry （CV） mode at very low potentials. The surface features, crystalline behaviors and chemical compositions of the formed anodic oxide layers were detected by AFM, SE and XPS. It was found that the structure of the titanium anodized films is crystalline, even though the maximum oxidation potential （（Pmax） is very low （as low as 1000 mY）. Both enlarging the applied voltage and reducing the potential scanning rate are beneficial for the growth and crystallization of titanium oxide films. It was thought that the internal compressive stress, other than the local joule heating accepted for many researchers, is the main force of stimulating the crystallization of anodic titanium oxide films at very low potentials.
文摘Titanium nitride thin films were deposited on silicon by high power impulse magnetron sputtering(HiPIMS)method at different frequencies(162-637 Hz)and pulse-on time(60-322μs).Response surface methodology(RSM)was employed to study the simultaneous effect of frequency and pulse-on time on the current waveforms and the crystallographic orientation,microstructure,and in particular,the deposition rate of titanium nitride at constant time and average power equal to 250 W.The crystallographic structure and morphology of deposited films were analyzed using XRD and FESEM,respectively.It is found that the deposition rate of HiPIMS samples is tremendously dependent on pulse-on time and frequency of pulses where the deposition rate changes from 4.5 to 14.5 nm/min.The regression equations and analyses of variance(ANOVA)reveal that the maximum deposition rate(equal to(17±0.8)nm/min)occurs when the frequency is 537 Hz and pulse-on time is 212μs.The experimental measurement of the deposition rate under this condition gives rise to the deposition rate of 16.7 nm/min that is in good agreement with the predicted value.
基金supported by the National Natural Science Foundation of China(No.11504436)the Natural Science Foundation of Hubei Province(No.2015CFB364)the Fundamental Research Funds for the Central Universities(Nos.CZW14019 and CZW15045)
文摘Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.
