Nowadays, switching power supplies are used in almost all electronic devices to regulate the voltage amplitude. The only obstacle on using these devices is the production of high frequency harmonics that violates diff...Nowadays, switching power supplies are used in almost all electronic devices to regulate the voltage amplitude. The only obstacle on using these devices is the production of high frequency harmonics that violates different standards such as (FCC, VDE, 461 ). In this paper the sources of various noises in switching power supplies will be introduced. Then, using appropriate model for high frequency transformers, a sample switching power supply will be simulated. In this simulation, the effect of leakage inductance on current and voltage waveforms of the input and output switches, which are the main cause of common mode differential mode noises and radiations, will be discussed and harmonically analyzed. Finally the experimental results will confirm the simulation conclusions.展开更多
Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET’s for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-...Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET’s for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-maah,J.//1999 IEEE International SOI ConferenceProceedings.—22~23(EC)Y2000-62422-24 0103673绝缘体上硅动态阈值电压 MOS(DTMOS)晶体管高频特性=High frequency characterization of SOI展开更多
文摘Nowadays, switching power supplies are used in almost all electronic devices to regulate the voltage amplitude. The only obstacle on using these devices is the production of high frequency harmonics that violates different standards such as (FCC, VDE, 461 ). In this paper the sources of various noises in switching power supplies will be introduced. Then, using appropriate model for high frequency transformers, a sample switching power supply will be simulated. In this simulation, the effect of leakage inductance on current and voltage waveforms of the input and output switches, which are the main cause of common mode differential mode noises and radiations, will be discussed and harmonically analyzed. Finally the experimental results will confirm the simulation conclusions.
文摘Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET’s for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-maah,J.//1999 IEEE International SOI ConferenceProceedings.—22~23(EC)Y2000-62422-24 0103673绝缘体上硅动态阈值电压 MOS(DTMOS)晶体管高频特性=High frequency characterization of SOI