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MESFET的源漏电压和旁栅间距对旁栅阈值电压的影响
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作者 詹琰 夏冠群 +2 位作者 赵福川 李传海 朱朝嵩 《功能材料与器件学报》 CAS CSCD 2000年第3期186-189,共4页
研究了MESFET的源漏电压对旁栅阈值电压的影响和旁栅间距与旁栅阈值电压的关系。结果表明源漏电压的大小对旁栅阈值电压有一定的影响,旁栅阈值电压的大小与旁栅间距大致成正比。
关键词 砷化镓 MESFET 旁栅阈值电 源漏电压 旁栅间距
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The Effect of Leakage Inductance on High Frequency Transformer Harmonics
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作者 B. Abdi M.H. Joukar A.H. Ranjbar A.A. Nasiri 《Journal of Energy and Power Engineering》 2011年第7期659-664,共6页
Nowadays, switching power supplies are used in almost all electronic devices to regulate the voltage amplitude. The only obstacle on using these devices is the production of high frequency harmonics that violates diff... Nowadays, switching power supplies are used in almost all electronic devices to regulate the voltage amplitude. The only obstacle on using these devices is the production of high frequency harmonics that violates different standards such as (FCC, VDE, 461 ). In this paper the sources of various noises in switching power supplies will be introduced. Then, using appropriate model for high frequency transformers, a sample switching power supply will be simulated. In this simulation, the effect of leakage inductance on current and voltage waveforms of the input and output switches, which are the main cause of common mode differential mode noises and radiations, will be discussed and harmonically analyzed. Finally the experimental results will confirm the simulation conclusions. 展开更多
关键词 EMI HF transformer harmonic simulation intrinsic capacitance leakage inductance SMPS.
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晶体管、MOS器件
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《电子科技文摘》 2001年第3期17-18,共2页
Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET’s for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-... Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET’s for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-maah,J.//1999 IEEE International SOI ConferenceProceedings.—22~23(EC)Y2000-62422-24 0103673绝缘体上硅动态阈值电压 MOS(DTMOS)晶体管高频特性=High frequency characterization of SOI 展开更多
关键词 绝缘体上硅 场效应晶体管 部分耗尽 动态阈值电 功能材料 高频特性 器件 全耗尽 低功率 源漏电压
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