为研究特殊污秽条件下复合材料的耐电蚀损及漏电起痕性能,在实验室中模拟特殊污秽条件下复合材料的现场运行情况,提出了一种新的耐漏电起痕性能加速老化试验（简称＂平面法＂）。平面法中使用硅藻土、氯化钠、碳单质、镍粉按一定比例混...为研究特殊污秽条件下复合材料的耐电蚀损及漏电起痕性能,在实验室中模拟特殊污秽条件下复合材料的现场运行情况,提出了一种新的耐漏电起痕性能加速老化试验（简称＂平面法＂）。平面法中使用硅藻土、氯化钠、碳单质、镍粉按一定比例混合后涂覆在试样表面以模拟特殊污秽条件。平面法中加压时间只需15 min,根据试样耐电蚀损水平将其性能评定为6-10 k V 3个等级。通过大量的试验研究,分析了材料表面电蚀损过程的机理,发现平面法的严格性高于斜面法,并且具有更好的区分度。最后,建议了新的耐漏电起痕性能试验方法,以供修改制定相关标准时参考。展开更多
针对0.13μm工艺常规MOSFET器件的制备流程进行了分析,提出了低功耗工艺改善方法,并针对优化工艺条件下的器件进行TCAD仿真,设计并进行了完整的DOE实验及样品性能测试。测试结果表明,通过调整轻掺杂漏区(LDD)的离子注入条件,冠状离子注...针对0.13μm工艺常规MOSFET器件的制备流程进行了分析,提出了低功耗工艺改善方法,并针对优化工艺条件下的器件进行TCAD仿真,设计并进行了完整的DOE实验及样品性能测试。测试结果表明,通过调整轻掺杂漏区(LDD)的离子注入条件,冠状离子注入区的角度、浓度以及沟道阀值电压离子注入区浓度等一系列方法,实现了0.13μm工艺1.5 V MOSFET器件关断条件下漏电流低于1 pA/μm。展开更多
A generalized mathematical model of human body current threshold for perception was established and the current flowing through human body could be arbitrary cyclical waveforms.The relationship between human body curr...A generalized mathematical model of human body current threshold for perception was established and the current flowing through human body could be arbitrary cyclical waveforms.The relationship between human body current threshold for perception and current frequency, true root mean square(RMS) value and influence factor was described.A test system was established based on electroencephalogram(EEG) to study the relationship between human body current threshold for perception and current waveform, frequency ...展开更多
Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,diele...Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.展开更多
High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricat...High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.展开更多
文摘为研究特殊污秽条件下复合材料的耐电蚀损及漏电起痕性能,在实验室中模拟特殊污秽条件下复合材料的现场运行情况,提出了一种新的耐漏电起痕性能加速老化试验（简称＂平面法＂）。平面法中使用硅藻土、氯化钠、碳单质、镍粉按一定比例混合后涂覆在试样表面以模拟特殊污秽条件。平面法中加压时间只需15 min,根据试样耐电蚀损水平将其性能评定为6-10 k V 3个等级。通过大量的试验研究,分析了材料表面电蚀损过程的机理,发现平面法的严格性高于斜面法,并且具有更好的区分度。最后,建议了新的耐漏电起痕性能试验方法,以供修改制定相关标准时参考。
文摘针对0.13μm工艺常规MOSFET器件的制备流程进行了分析,提出了低功耗工艺改善方法,并针对优化工艺条件下的器件进行TCAD仿真,设计并进行了完整的DOE实验及样品性能测试。测试结果表明,通过调整轻掺杂漏区(LDD)的离子注入条件,冠状离子注入区的角度、浓度以及沟道阀值电压离子注入区浓度等一系列方法,实现了0.13μm工艺1.5 V MOSFET器件关断条件下漏电流低于1 pA/μm。
基金Supported by the Ministry of Science and Technology of China (No. NCSTE-2006-JKZX-167)Beijing Key Laboratory (Measurement and Control of Electro-mechanical Systems) (No. 82063005)
文摘A generalized mathematical model of human body current threshold for perception was established and the current flowing through human body could be arbitrary cyclical waveforms.The relationship between human body current threshold for perception and current frequency, true root mean square(RMS) value and influence factor was described.A test system was established based on electroencephalogram(EEG) to study the relationship between human body current threshold for perception and current waveform, frequency ...
基金Projects(10672139, 10825209, 50872117) supported by the National Natural Science Foundation of ChinaProject(207079) supported by the Key Program of Ministry of Education of China+3 种基金Project(07JJ5002) supported by the Natural Science Foundation of Hunan Province, ChinaProject(08C862) supported by Scientific Research Fund of Hunan Provincial Education Department, ChinaProject([2008]101) supported by Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryProject([2007]362) supported by Hunan Prestigious Furong Scholar Award, China
文摘Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274026,60274077 and 60976068)the Scientific Research Fund of Hunan Provincial Education Department(Grant No. 10C0709)the Science and Technology Plan Foundation of Hunan Province(Grant No.2011GK3058)
文摘High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.
