利用脉冲激光沉积技术在Sr Ti O_3表面导电层上方制备非晶Hf O_2栅介质薄膜,通过磁控溅射技术在非晶Hf O_2栅介质薄膜上方制备直径为100μm的圆形Pt电极,研究了变温条件下Pt/Hf O_2/Sr Ti O_3的漏电流I-V特性,分析了非晶Hf O_2栅介质层...利用脉冲激光沉积技术在Sr Ti O_3表面导电层上方制备非晶Hf O_2栅介质薄膜,通过磁控溅射技术在非晶Hf O_2栅介质薄膜上方制备直径为100μm的圆形Pt电极,研究了变温条件下Pt/Hf O_2/Sr Ti O_3的漏电流I-V特性,分析了非晶Hf O_2栅介质层的漏电机制,如空间电荷限制电流机制、Fowler-Nordheim导电机制、Pool-Frenkel发射机制、肖特基发射机制。研究结果表明在低压段(<0.18 V)为欧姆导电;在高压段(>0.5 V)为Pool-Frenkel发射机制。展开更多
In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD)....In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD). We observe that the incorporated nitrogen ions will improve the positive gate leakage current of devices obviously, but do not change the reverse gate leakage current. The passivation mechanism of nitrogen ions in oxygen vacancies in HfO 2 is studied by first-principles calculations. It is shown that the gap states of HfO 2 caused by oxygen vacancies increase the positive gate leakage current of MOS-HEMTs. Nitrogen ions passivate the gap states of HfO 2 and decrease the positive gate leakage current but do not effect the reverse gate leakage current.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.60736033,60890191)the Fundamental Research Funds for the Central Universities (Grant Nos.JY10000925002,JY10000-904009)
文摘In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD). We observe that the incorporated nitrogen ions will improve the positive gate leakage current of devices obviously, but do not change the reverse gate leakage current. The passivation mechanism of nitrogen ions in oxygen vacancies in HfO 2 is studied by first-principles calculations. It is shown that the gap states of HfO 2 caused by oxygen vacancies increase the positive gate leakage current of MOS-HEMTs. Nitrogen ions passivate the gap states of HfO 2 and decrease the positive gate leakage current but do not effect the reverse gate leakage current.
