This technical paper presents the resolution of high leakage current failures on QFN-mr （Quad-Flat No-leads Multi-Row） LF （leadframe） devices by optimizing the waterjet deflash process and eliminating the ESD （el...This technical paper presents the resolution of high leakage current failures on QFN-mr （Quad-Flat No-leads Multi-Row） LF （leadframe） devices by optimizing the waterjet deflash process and eliminating the ESD （electrostatic discharge） events. ESD damage to units can cause permanent or latent product failures which results in low final test yield, and worse, possible external customer complaints. The use of CO2 （carbon dioxide） bubbler was able to reduce the DI （deionized） water’s equivalent resistivity from 17 M？ to 0.30 M？, minimizing the tribocharging effect produced during the waterjet deflash process. Moreover, ESD events were eliminated by grounding the floating assembly equipment parts and installing appropriate ESD controls. It is of high importance to reduce or eliminate the leakage current failures to ensure the product quality, especially as the market becomes more demanding. After the optimization and implementation of the corrective and improvement actions, high leakage current occurrence was significantly reduced from baseline of 5,784 ppm to 20 ppm.展开更多
Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,diele...Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.展开更多
文摘This technical paper presents the resolution of high leakage current failures on QFN-mr （Quad-Flat No-leads Multi-Row） LF （leadframe） devices by optimizing the waterjet deflash process and eliminating the ESD （electrostatic discharge） events. ESD damage to units can cause permanent or latent product failures which results in low final test yield, and worse, possible external customer complaints. The use of CO2 （carbon dioxide） bubbler was able to reduce the DI （deionized） water’s equivalent resistivity from 17 M？ to 0.30 M？, minimizing the tribocharging effect produced during the waterjet deflash process. Moreover, ESD events were eliminated by grounding the floating assembly equipment parts and installing appropriate ESD controls. It is of high importance to reduce or eliminate the leakage current failures to ensure the product quality, especially as the market becomes more demanding. After the optimization and implementation of the corrective and improvement actions, high leakage current occurrence was significantly reduced from baseline of 5,784 ppm to 20 ppm.
基金Projects(10672139, 10825209, 50872117) supported by the National Natural Science Foundation of ChinaProject(207079) supported by the Key Program of Ministry of Education of China+3 种基金Project(07JJ5002) supported by the Natural Science Foundation of Hunan Province, ChinaProject(08C862) supported by Scientific Research Fund of Hunan Provincial Education Department, ChinaProject([2008]101) supported by Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education MinistryProject([2007]362) supported by Hunan Prestigious Furong Scholar Award, China
文摘Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.
