Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key me...Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.展开更多
GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold v...GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.展开更多
Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the ...Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the silic on body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating po wer device are given.As the simulation results show that through changing Ge mole fraction coupl ed with the silicon body thickness tuning,UTB device with good performance can b e obtained.展开更多
In recent times, silicone rubber insulating material is used for power transmission line and substation insulation applications. In the present work, tracking and erosion resistance of the micro size filled and nano s...In recent times, silicone rubber insulating material is used for power transmission line and substation insulation applications. In the present work, tracking and erosion resistance of the micro size filled and nano size filled silicone rubber material has been studied under the AC voltage, with ammonium chloride as a contaminant, as per IEC 60587 test procedures. The characteristic changes in the tracking resistance of the micro size and nano size filled specimens are analyzed through leakage current measurement. Comparative Tracking Index （CTI） is also evaluated in order to understand the relative behavior of solid electrical insulating material with regard to their susceptibility to surface tracking. Trend followed by the fundamental, third harmonic and fifth harmonic components of the leakage current during the tracking study are analyzed using moving average current technique. It is observed that the harmonic components of leakage current show good correlation with the tracking and erosion resistance of the material. It is noticed that 5 % wt ofnano size filler gives similar performance to that of 30 % wt of micro size filler in silicone composites.展开更多
A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation...A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.展开更多
文摘Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.
文摘GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.
文摘Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the silic on body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating po wer device are given.As the simulation results show that through changing Ge mole fraction coupl ed with the silicon body thickness tuning,UTB device with good performance can b e obtained.
文摘In recent times, silicone rubber insulating material is used for power transmission line and substation insulation applications. In the present work, tracking and erosion resistance of the micro size filled and nano size filled silicone rubber material has been studied under the AC voltage, with ammonium chloride as a contaminant, as per IEC 60587 test procedures. The characteristic changes in the tracking resistance of the micro size and nano size filled specimens are analyzed through leakage current measurement. Comparative Tracking Index （CTI） is also evaluated in order to understand the relative behavior of solid electrical insulating material with regard to their susceptibility to surface tracking. Trend followed by the fundamental, third harmonic and fifth harmonic components of the leakage current during the tracking study are analyzed using moving average current technique. It is observed that the harmonic components of leakage current show good correlation with the tracking and erosion resistance of the material. It is noticed that 5 % wt ofnano size filler gives similar performance to that of 30 % wt of micro size filler in silicone composites.
基金Project partially supported by the Zhejiang Provincial Nature Science Fund of China (Nos. Y107055 and Y1080546)the Semiconductor Manufacturing International Corp. (SMIC)
文摘A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) pro- tection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Com- pared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.
