Considering the effect of temperature and process variations, the inputs and clock signals combination sleep state dependent leakage current characteristics is analyzed and the optimal sleep state is examined in sub-6...Considering the effect of temperature and process variations, the inputs and clock signals combination sleep state dependent leakage current characteristics is analyzed and the optimal sleep state is examined in sub-65nm dual threshold voltage （V1） footed domino circuits. HSPICE simulations based on 65nm and 45nm BSIM4 models show that the proposed CLIL state （the clock signal and inputs are all low） is the optimal state to reduce the leakage current of the high fan-in footed domino circuits at high temperature and almost all footed domino circuits at room temperature, as compared to the conventional CHIL state （the clock signal is high and inputs are all low） and the CHIH state （the clock signal and inputs are all high）. Further, the influence of the process variations on the leakage current characteristics of the dual V1 footed domino circuits is evaluated. At last, temperature and process variation aware new low leakage current setup guidelines are provided.展开更多
p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of ...p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.展开更多
基金supported by the2008Science and Research Foundation of Hebei Education Depart ment(No.2008308)~~
文摘Considering the effect of temperature and process variations, the inputs and clock signals combination sleep state dependent leakage current characteristics is analyzed and the optimal sleep state is examined in sub-65nm dual threshold voltage （V1） footed domino circuits. HSPICE simulations based on 65nm and 45nm BSIM4 models show that the proposed CLIL state （the clock signal and inputs are all low） is the optimal state to reduce the leakage current of the high fan-in footed domino circuits at high temperature and almost all footed domino circuits at room temperature, as compared to the conventional CHIL state （the clock signal is high and inputs are all low） and the CHIH state （the clock signal and inputs are all high）. Further, the influence of the process variations on the leakage current characteristics of the dual V1 footed domino circuits is evaluated. At last, temperature and process variation aware new low leakage current setup guidelines are provided.
基金supported by the National Natural Science Foundation of China(62003151,61925404,62074122,and 61904139)the Key Research and Development Program in Shaanxi Province(2016KTZDGY-03-01)。
文摘p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.
