期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
利用激光AFM和TEM探索肌动蛋白体外自装配聚合结构 被引量:1
1
作者 张军 王远亮 +2 位作者 程超 CHEN Xin-yong 何创龙 《激光生物学报》 CAS CSCD 2008年第1期1-6,共6页
细胞内肌动蛋白(actin)通过与actin结合蛋白(actin binding proteins,ABPs)相互作用,形成以F-actin为基础多种ABPs参与装配的高度有序的超分子聚合结构,行使各种重要生理功能。在体外聚合条件下,不存在F-actin稳定剂时纯化的actin主要... 细胞内肌动蛋白(actin)通过与actin结合蛋白(actin binding proteins,ABPs)相互作用,形成以F-actin为基础多种ABPs参与装配的高度有序的超分子聚合结构,行使各种重要生理功能。在体外聚合条件下,不存在F-actin稳定剂时纯化的actin主要通过自装配形成大尺度的聚集堆积结构;这种表观无序的结构体系由于被认为不具备细胞功能活性而受到忽视。利用激光原子力显微镜(atomic force microscope,AFM)和透射电子显微镜(transmission electron microscope,TEM)技术,对actin体外通过自装配过程形成的大尺度聚集结构进行了细致的观察和分析。研究发现,actin在体外通过自装配过程除了形成无序的蛋白堆积物之外,还能够聚合形成复杂的离散结构,包括树状分支的纤维丛、无规卷曲的纤维簇以及具有不同直径的长纤维等;这些大尺度纤维复合物明显不同于在ABPs或过量F-actin稳定剂参与下形成的由单根微丝和微丝束构成的聚合结构。表明无ABPs或F-actin稳定剂存在的情况下,体外聚合的F-actin在一定条件下可进一步聚集缠绕形成复杂的纤维结构或无序的蛋白堆积物。事实上,actin自装配过程反映了其固有的聚合热力学特性,深入探索将有助于理解ABPs在体内actin超分子聚合结构体系装配中的调控作用及其分子机制。 展开更多
关键词 肌动蛋白 自装配 超分子 激光原子力显微镜 透射电子显微镜
下载PDF
Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
2
作者 曾玉刚 韩根全 余金中 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第4期641-644,共4页
Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then, the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration, -20ns, bul... Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then, the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration, -20ns, bulk diffusion is forbidden,and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20-25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 ×10^10cm^-2. The surface morphology evolution is investigated by AFM. 展开更多
关键词 Ge quantum dot ArF excimer laser annealing LIQD AFM
下载PDF
Laser induced oxidation and optical properties of stoichiometric and non-stoichiometric Bi2Te3 nanoplates 被引量:1
3
作者 Rui He Sukrit Sucharitakul +3 位作者 Zhipeng Ye Courtney Keiser Tim E. Kidd Xuan P. A. Gao 《Nano Research》 SCIE EI CAS CSCD 2015年第3期851-859,共9页
Bi-Te nanoplates (NPs) grown by a low pressure vapor transport method have been studied by Raman spectroscopy, atomic force microscopy (AFM), energy- dispersive X-ray spectroscopy (EDS), and Auger electron spect... Bi-Te nanoplates (NPs) grown by a low pressure vapor transport method have been studied by Raman spectroscopy, atomic force microscopy (AFM), energy- dispersive X-ray spectroscopy (EDS), and Auger electron spectroscopy (AES). We find that the surface of relatively thick (more than tens of nanometers) Bi2Te3 NPs is oxidized in the air and forms a bump under heating with moderate laser power, as revealed by the emergence of Raman lines characteristic of Bi2O3 and TeO2 and characterization by AFM and EDS. Further increase of laser power burns holes on the surface of the NPs. Thin (thicknesses less than 20 nm) NPs with stoichiometry different from Bi2Te3 were also studied. Raman lines from non-stoichiometric NPs are different from those of stoichiometric ones and display characteristic changes with the increase of Bi concentration. Thin NPs with the same thickness but different stoichiometries show different color contrast compared to the substrate in the optical image. This indicates that the optical absorption coefficient in thin Bi-Te NPs strongly depends on their stoichiometry. 展开更多
关键词 bismuth telluride NANOPLATE Raman spectroscopy oxidation STOICHIOMETRY
原文传递
Room-temperature epitaxial growth of V_2O_3 films
4
作者 LIU XiangBo LU HuiBin +2 位作者 HE Meng JIN KuiJuan YANG GuoZhen 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第10期1866-1869,共4页
Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2... Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2O3 (0001) substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3+ oxida- tion state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are ap- proximately 0.8 mΩ cm and 0.5 mΩ cm for 10-rim-thick and 35-nm-thick V203 film, respectively. 展开更多
关键词 room-temperature epitaxy V2O3 metal-insulator transition
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部