我们对 Si O2 覆盖退火增强 In Ga As/In Ga As P/In P激光器材料量子阱混合技术进行了实验研究 .相对于原始样品 ,退火时无 Si O2 覆盖的样品经 80 0℃ ,30 s快速退火后 ,其光致发光谱的峰值波长“蓝移”了 7nm,退火时有 Si O2 覆盖的...我们对 Si O2 覆盖退火增强 In Ga As/In Ga As P/In P激光器材料量子阱混合技术进行了实验研究 .相对于原始样品 ,退火时无 Si O2 覆盖的样品经 80 0℃ ,30 s快速退火后 ,其光致发光谱的峰值波长“蓝移”了 7nm,退火时有 Si O2 覆盖的样品经过同样的快速退火后 ,其光致发光谱的峰值波长“蓝移”了 56nm.即在同一片子上实现了在需要量子阱混合的区域带隙的“蓝移”足够大的同时 ,不希望量子阱混合的区域能带结构的变化创记录的小 .本文认为增大量子阱的宽度、采用无应力的量子阱结构以及引入足够厚的缓冲层可以改善量子阱材料的晶格质量 ,有利于提高量子阱混合技术的可靠性与重复性 ,改善量子阱材料的热稳定性 .展开更多
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic s...The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.展开更多
文摘我们对 Si O2 覆盖退火增强 In Ga As/In Ga As P/In P激光器材料量子阱混合技术进行了实验研究 .相对于原始样品 ,退火时无 Si O2 覆盖的样品经 80 0℃ ,30 s快速退火后 ,其光致发光谱的峰值波长“蓝移”了 7nm,退火时有 Si O2 覆盖的样品经过同样的快速退火后 ,其光致发光谱的峰值波长“蓝移”了 56nm.即在同一片子上实现了在需要量子阱混合的区域带隙的“蓝移”足够大的同时 ,不希望量子阱混合的区域能带结构的变化创记录的小 .本文认为增大量子阱的宽度、采用无应力的量子阱结构以及引入足够厚的缓冲层可以改善量子阱材料的晶格质量 ,有利于提高量子阱混合技术的可靠性与重复性 ,改善量子阱材料的热稳定性 .
基金supported by the National Natural Science Foundation of China (Nos.90921015 and 10734060)the National Basic Research Program of China (No.2010CB327601)
文摘The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.
