This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output p...This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.展开更多
We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted ...We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.展开更多
基金the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021)the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902)the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z419,2007AA03Z417)~~
文摘This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.
文摘We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.
