The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the A...The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.展开更多
A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating a...A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect.It facilitates producing VSAL by simplified technology and improves the laser performance.A VSAL with 400nm small aperture is demonstrated by focused ion beam (FIB) and the output power is 0 3mW at 31mA.展开更多
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and ...Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.展开更多
By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at ...By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.展开更多
The waveguide design is one of the most important parts in a terahertz quantum cascade laser(QCL). Si/SiGe QCL waveguides, based on the Drude model and finite-difference time-domain (FDTD) method, are designed by ...The waveguide design is one of the most important parts in a terahertz quantum cascade laser(QCL). Si/SiGe QCL waveguides, based on the Drude model and finite-difference time-domain (FDTD) method, are designed by the traditional refractive index waveguide structure, the single-sided metal structure, the double-metal clad structure, and a novel metal/metal silicide structure. The metal/metal silicide structure, showing high modal confinement,is convenient in process engineering and is expected to be a viable waveguide solution for Si/SiGe QCLs in the THz range.展开更多
A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as curre...A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.展开更多
With the help of the effective refractive index method we have numerically analyzed a multilayer planar waveguide structure and calculated the propagation constants, confinement factors, and transverse electric (TE) m...With the help of the effective refractive index method we have numerically analyzed a multilayer planar waveguide structure and calculated the propagation constants, confinement factors, and transverse electric (TE) modes. A five-layer waveguide model has been provided to analyze the electro-magne tic wave propagation process. The analysis method has been applied to the 980 nm laser with active layer of GaInAs/GaInAsP strained quantum wells, GaInAsP confinement layers and GaInP cap layers. By changing the thickness of confinement layers, we obtained confinement factor as high as 95% with higher TE modes TE1 and TE2. The results are in good agreement with the experiment by A. Al-Muhanna et al. and give the new idea to enhance output power of semiconductor lasers. The analysis method can also be extended to any other slab multilayer waveguide structures, and the results are useful to the fabrication of optic-electronic devices.展开更多
An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of stra...An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.展开更多
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers.We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer...This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers.We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide.The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm.Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm.Therefore,our invariable coupling power technique is simpler than Intel's.展开更多
In this paper it is reported for the first time that the third harmonic generated in EH32 mode of a gas-filled waveguide by fs pulses has higher generation efficiency. The new finding contrasts with the experiment in...In this paper it is reported for the first time that the third harmonic generated in EH32 mode of a gas-filled waveguide by fs pulses has higher generation efficiency. The new finding contrasts with the experiment in It. G. Durfee Ⅲ, S. Backus, M.M. Murnane, and H.C. Kapteyn, Opt. Left. 22 (1997) 1565]. Some possible factors, which produce the contradiction, are discussed briefly.展开更多
Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level a...Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level and the rotational relaxation of rotational levels are described. The comparison between this model and a set of coupled rat equations model are discussed.展开更多
Theoretical analyses have been performed to describe the coupling losses for a plane mirror in rectangular waveguide resonator for an arbitrary waveguide mode as a function of the Fresnel number for several values of ...Theoretical analyses have been performed to describe the coupling losses for a plane mirror in rectangular waveguide resonator for an arbitrary waveguide mode as a function of the Fresnel number for several values of the aspect ratio by using Fresnel approximation.展开更多
A novel theoretical model of thermal diffusion has been established to study thermal interaction between two neighboring diodes in semiconductor laser arrays. The main cause of the ocurrence of the thermal interaction...A novel theoretical model of thermal diffusion has been established to study thermal interaction between two neighboring diodes in semiconductor laser arrays. The main cause of the ocurrence of the thermal interaction between two neighboring diodes in array devices is the heat conduction through heat sink. We hold that as the devices must have heat sink to diffuse heat, this kind of interaction in the array would always exist. However, when the pitch between two neighboring diodes in the array is reasonably defined, this troublesome thermal interaction can be simply reduced by using our model. Based on the individual diodes with leaky waveguide structure, we experimentally succeeded in fabricating 2D 4 ×4 arrays. The thermal interaction between upper and lower diodes in the 2D array is also considered as well as the function of the heat sink. The measured results show that the pulse peak output powor of the 2D 4 ×4 array is high up to 11 W.展开更多
In recent years, the high density plasma in the range of 10^19~ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma...In recent years, the high density plasma in the range of 10^19~ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma density on HL-2A divertor tokamak is being developed, however the design of the interferometer will appear many new problem in face of experimental environment of the HL-2A divertor device, such as how to make both transmission and arrangement of optics of the interferometer, the effect of electromo- tive force on device and how about the vibration etc. According to the eight windows setting on the largest flange of the device we have to design a Michelson-type FIR laser interferometer with 8 probing channels and eight concave mirrors must be attached it to the inner wall of the vacuum vessel of the device. Therefore, there are many problems should be taken into account to resolve, for example, ( 1 ) the vibration-proof consider for muhichannel interferometer and HCN laser, (2) the stabilization and reliability of the mirror frame uum vessel, the mirrors, hanging on internal wall of vachow to prevent the sputtering to (3) the vacuum seal of the windows and the design of mobile seal for the shutter to avoid the sputter coating of plasma,展开更多
A round jet into a counterflow under different jet-to-current velocity ratios was investigated using large eddy simulation.The results agree well with experimental measurements from laser-Doppler anemometry and laser-...A round jet into a counterflow under different jet-to-current velocity ratios was investigated using large eddy simulation.The results agree well with experimental measurements from laser-Doppler anemometry and laser-induced fluorescence that include velocity and mean concentrations along the centerline and radial direction.Vortex rings appear in the region near the jet exit and large-scale vortex structures still occur near the stagnation point.The flow becomes more chaotic and three-dimensional with the presence of these structures.In particular,their presence near the stagnation point results in large velocity fluctuations that enhance the mixing process and dilution.These fluctuations are described by probability density functions that deviate from Gaussian distribution.The three-dimensional streamlines indicate that the jet not only oscillates in three directions but also rotates about the jet axis and around the vortex.The second and third moments of the velocity or scalar fluctuations identify that the mixing processes are greater in the region before the stagnation point.展开更多
文摘The 808nm laser diodes with a broad waveguide are designed and fabricated.The thickness of the Al_ 0.35 - Ga_ 0.65 As waveguide is increased to 0.9μm.In order to suppress the super modes,the thickness of the Al_ 0.55 Ga_ 0.45 As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm -1 .The structures are grown by metal organic chemical vapour deposition.The devices show excellent performances.The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.
文摘A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect.It facilitates producing VSAL by simplified technology and improves the laser performance.A VSAL with 400nm small aperture is demonstrated by focused ion beam (FIB) and the output power is 0 3mW at 31mA.
文摘Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
文摘By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide(RW) AlGaInAs/AlGaAs distributed feedback(DFB) laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.
文摘The waveguide design is one of the most important parts in a terahertz quantum cascade laser(QCL). Si/SiGe QCL waveguides, based on the Drude model and finite-difference time-domain (FDTD) method, are designed by the traditional refractive index waveguide structure, the single-sided metal structure, the double-metal clad structure, and a novel metal/metal silicide structure. The metal/metal silicide structure, showing high modal confinement,is convenient in process engineering and is expected to be a viable waveguide solution for Si/SiGe QCLs in the THz range.
文摘A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.
文摘With the help of the effective refractive index method we have numerically analyzed a multilayer planar waveguide structure and calculated the propagation constants, confinement factors, and transverse electric (TE) modes. A five-layer waveguide model has been provided to analyze the electro-magne tic wave propagation process. The analysis method has been applied to the 980 nm laser with active layer of GaInAs/GaInAsP strained quantum wells, GaInAsP confinement layers and GaInP cap layers. By changing the thickness of confinement layers, we obtained confinement factor as high as 95% with higher TE modes TE1 and TE2. The results are in good agreement with the experiment by A. Al-Muhanna et al. and give the new idea to enhance output power of semiconductor lasers. The analysis method can also be extended to any other slab multilayer waveguide structures, and the results are useful to the fabrication of optic-electronic devices.
文摘An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.
基金the National Natural Science Foundation of China (Grant No.60477020 and 60776046)the National Natural Science Key Foundation of China (Grant No.60537010)the National Basic Research Program of China (Grant No.2006CB302802)
文摘This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers.We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide.The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm.Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm.Therefore,our invariable coupling power technique is simpler than Intel's.
基金The project supported by National Natural Science Foundation of China under Grant No. 90103025 and the Research Fund for the Doctoral Program of Higher .Education of China under Grant No. 20020027006
文摘In this paper it is reported for the first time that the third harmonic generated in EH32 mode of a gas-filled waveguide by fs pulses has higher generation efficiency. The new finding contrasts with the experiment in It. G. Durfee Ⅲ, S. Backus, M.M. Murnane, and H.C. Kapteyn, Opt. Left. 22 (1997) 1565]. Some possible factors, which produce the contradiction, are discussed briefly.
文摘Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level and the rotational relaxation of rotational levels are described. The comparison between this model and a set of coupled rat equations model are discussed.
文摘Theoretical analyses have been performed to describe the coupling losses for a plane mirror in rectangular waveguide resonator for an arbitrary waveguide mode as a function of the Fresnel number for several values of the aspect ratio by using Fresnel approximation.
文摘A novel theoretical model of thermal diffusion has been established to study thermal interaction between two neighboring diodes in semiconductor laser arrays. The main cause of the ocurrence of the thermal interaction between two neighboring diodes in array devices is the heat conduction through heat sink. We hold that as the devices must have heat sink to diffuse heat, this kind of interaction in the array would always exist. However, when the pitch between two neighboring diodes in the array is reasonably defined, this troublesome thermal interaction can be simply reduced by using our model. Based on the individual diodes with leaky waveguide structure, we experimentally succeeded in fabricating 2D 4 ×4 arrays. The thermal interaction between upper and lower diodes in the 2D array is also considered as well as the function of the heat sink. The measured results show that the pulse peak output powor of the 2D 4 ×4 array is high up to 11 W.
文摘In recent years, the high density plasma in the range of 10^19~ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma density on HL-2A divertor tokamak is being developed, however the design of the interferometer will appear many new problem in face of experimental environment of the HL-2A divertor device, such as how to make both transmission and arrangement of optics of the interferometer, the effect of electromo- tive force on device and how about the vibration etc. According to the eight windows setting on the largest flange of the device we have to design a Michelson-type FIR laser interferometer with 8 probing channels and eight concave mirrors must be attached it to the inner wall of the vacuum vessel of the device. Therefore, there are many problems should be taken into account to resolve, for example, ( 1 ) the vibration-proof consider for muhichannel interferometer and HCN laser, (2) the stabilization and reliability of the mirror frame uum vessel, the mirrors, hanging on internal wall of vachow to prevent the sputtering to (3) the vacuum seal of the windows and the design of mobile seal for the shutter to avoid the sputter coating of plasma,
基金supported by the National Natural Science Foundation of China (Grant No. 11172218)academic award for excellent Ph.D.Candidates funded by the Ministry of Education of China
文摘A round jet into a counterflow under different jet-to-current velocity ratios was investigated using large eddy simulation.The results agree well with experimental measurements from laser-Doppler anemometry and laser-induced fluorescence that include velocity and mean concentrations along the centerline and radial direction.Vortex rings appear in the region near the jet exit and large-scale vortex structures still occur near the stagnation point.The flow becomes more chaotic and three-dimensional with the presence of these structures.In particular,their presence near the stagnation point results in large velocity fluctuations that enhance the mixing process and dilution.These fluctuations are described by probability density functions that deviate from Gaussian distribution.The three-dimensional streamlines indicate that the jet not only oscillates in three directions but also rotates about the jet axis and around the vortex.The second and third moments of the velocity or scalar fluctuations identify that the mixing processes are greater in the region before the stagnation point.