The optical noninvasive diagnostic of characteristic of silicon semiconductor devices by using a InGaAsP/InP semiconductor laser as an optical probe is reported. The principle of experimental method is based on the de...The optical noninvasive diagnostic of characteristic of silicon semiconductor devices by using a InGaAsP/InP semiconductor laser as an optical probe is reported. The principle of experimental method is based on the dependence of the optical refractive index on the carrier charge density in the active region of devices and detection of variation of refractive index by two laser beam interferometric techniques.展开更多
文摘The optical noninvasive diagnostic of characteristic of silicon semiconductor devices by using a InGaAsP/InP semiconductor laser as an optical probe is reported. The principle of experimental method is based on the dependence of the optical refractive index on the carrier charge density in the active region of devices and detection of variation of refractive index by two laser beam interferometric techniques.
