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衬底对a-Si:H激光结晶的影响
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作者 鲍希茂 顾清 黄信凡 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1989年第3期233-235,共3页
文章报道了a-Si∶H在石英,SiO_2/Si,WSi_2/Si和Al/Si四种不同衬底上激光结合的结果.
关键词 氢化非晶硅 激光结晶 热处理
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Ar^+激光结晶非晶硅膜电学性质研究
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作者 张向东 黄信凡 陈坤基 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1992年第1期36-41,T003,共7页
本文使用TEM分析、X射线衍射以及电导和霍耳效应联合测量等手段研究了Ar^+激光结晶a-Si:H膜的结构和电学性质.结果表明a-Si:H液相激光结晶膜(LP-LCR)的平均晶粒尺寸达数十微米,呈<111>择优取向,室温电导率为1.5(Ω·cm)^(-1)... 本文使用TEM分析、X射线衍射以及电导和霍耳效应联合测量等手段研究了Ar^+激光结晶a-Si:H膜的结构和电学性质.结果表明a-Si:H液相激光结晶膜(LP-LCR)的平均晶粒尺寸达数十微米,呈<111>择优取向,室温电导率为1.5(Ω·cm)^(-1),电子霍耳迁移率达36cm^2V^(-1)s^(-1),是一种有应用前景的薄膜. 展开更多
关键词 激光结晶 非晶硅膜 电学性质
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美开发超常规近红外激光结晶技术
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《浙江化工》 CAS 2003年第4期30-30,共1页
关键词 美国伊利诺斯工业大学 超常规近红外激光结晶技术 晶体 成核
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固体纳秒激光器应用于非晶硅薄膜结晶的研究 被引量:1
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作者 王帅 刘敏 +3 位作者 潘岭峰 张紫辰 王晓峰 杨富华 《激光与红外》 CAS CSCD 北大核心 2017年第9期1096-1101,共6页
多晶硅薄膜比非晶硅薄膜具有更高的电子迁移率,在器件中表现出更优良的性能,脉冲激光结晶非晶硅薄膜制备多晶硅薄膜的方法具有热积存小、对衬底影响小、成本低等优点。使用532 nm固体纳秒激光器进行了非晶硅薄膜激光结晶实验,为了解决... 多晶硅薄膜比非晶硅薄膜具有更高的电子迁移率,在器件中表现出更优良的性能,脉冲激光结晶非晶硅薄膜制备多晶硅薄膜的方法具有热积存小、对衬底影响小、成本低等优点。使用532 nm固体纳秒激光器进行了非晶硅薄膜激光结晶实验,为了解决直接使用高斯光束结晶时因光斑能量分布带来的结晶效果不均匀,首先基于光束整型系统将圆形的高斯光束整型成为线性平顶光束,而后研究单脉冲能量密度、脉冲个数、非晶硅薄膜厚度对结晶效果的影响。结果表明,线性平顶光束用于非晶硅薄膜结晶具有更好的均匀性,对于100 nm非晶硅薄膜,随着能量密度的增加,晶粒逐渐变大,直到表面出现热损伤,最大晶粒尺寸约为1μm×500 nm。随着脉冲个数的增加,表面粗糙度有减小的趋势,观察到的最小粗糙度约为2.38 nm。对于20nm超薄非晶硅薄膜,只有当能量密度位于134 mJ/cm^2和167 mJ/cm^2之间、脉冲个数大于或等于八个时才能观察到明显的结晶效果。 展开更多
关键词 脉冲激光 激光结晶 超薄非晶硅薄膜 多晶硅薄膜
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反射条结构激光再结晶SOI的微结构研究
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作者 刘峥 邵贝羚 +3 位作者 李永洪 王红卫 杨景铭 钱佩信 《电子学报》 EI CAS CSCD 北大核心 1996年第8期15-18,共4页
用平面和横断面电子显微术研究了反射条结构激光再结晶SOI(SilicononInsulator)的微结构和微缺陷,实验观察表明,正常工艺条件下,经激光再结晶处理后硅膜可分为三个不同的区域:中间为单晶区,膜面取向为[1... 用平面和横断面电子显微术研究了反射条结构激光再结晶SOI(SilicononInsulator)的微结构和微缺陷,实验观察表明,正常工艺条件下,经激光再结晶处理后硅膜可分为三个不同的区域:中间为单晶区,膜面取向为[100];两侧为再结晶大晶粒区;最外侧为尚未再结晶的多晶区.当工艺条件不适当时,在"单晶区"中存在亚晶界和大角晶界;在"单晶区"两侧,有排列整齐的180°微孪晶,孪晶面为{111}.再结晶大晶粒的取向没有规律性,多晶区由具有明显织构的柱状晶组成,文中讨论了缺陷出现的原因. 展开更多
关键词 SOI 激光结晶 微结构 微缺陷
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a-Si∶H薄膜的激光诱导结晶
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作者 孟祥东 《吉林师范大学学报(自然科学版)》 2004年第1期28-29,32,共3页
利用等离子体增强化学气相淀积(PECVD)系统制备了a-Si:H薄膜.使用KrF准分子脉冲激光对a-Si:H薄膜进行辐照,使a-Si:H晶化.拉曼散射谱和电子衍射谱的结果表明经过激光辐照后在a-Si:H层形成纳米硅颗粒.
关键词 薄膜 激光诱导结晶 等离子体增强 化学气相淀积 半导体材料
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激光单条扫描定域再结晶SOI技术研究 被引量:1
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作者 王红卫 杨景铭 钱佩信 《电子学报》 EI CAS CSCD 北大核心 1996年第2期22-27,共6页
本文描述了用于制作三维集成电路(3D-IC)的激光再结晶工艺的实验装置和工艺过程,报道了反射条结构样品的单条扫描定域再结晶的实验结果并作了相应的讨论。实验表明,再结晶质量与激光功率、预热温度、高反区条宽以及激光扫描速... 本文描述了用于制作三维集成电路(3D-IC)的激光再结晶工艺的实验装置和工艺过程,报道了反射条结构样品的单条扫描定域再结晶的实验结果并作了相应的讨论。实验表明,再结晶质量与激光功率、预热温度、高反区条宽以及激光扫描速率等因素有关,并受到工艺稳定性的影响;利用激光单条扫描定域再结晶技术已获得12μm宽度、芯片长度的能用以制作高性能MOS-FET的SOI单晶条。 展开更多
关键词 三维 集成电路 SOI 激光结晶 制造工艺
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热传导在激光再结晶中的作用
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作者 王红卫 杨景铭 +1 位作者 栾洪发 钱佩信 《微电子学与计算机》 CSCD 北大核心 1995年第2期46-47,共2页
本文借助于计算机模拟,定性分析了热传导对于形成反射条结构激光再结晶过程中温度双峰分布的重要作用。结果表明,影响再结晶质量的激光功率、高反区条宽以及反射率差等因素是通过热传导过程相互制约的。
关键词 SOI 激光结晶 热传导
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用大电流驱动采用SELAX技术的高分辨率显示系统的整体可靠性
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作者 Y.Toyota M.Matsumura +4 位作者 M.Hatano T.Shiba T.Itoga M.Ohkura 顾智企 《现代显示》 2006年第8期20-23,共4页
应用低压多晶硅TFT和高压多晶硅TFT组合开发成功高分辨率(>300ppi)LCD/OEL显示系统,也就是说,将受激准分子激光结晶化(ELC)TFT用于耐高压显示电路,而将选择扩大激光结晶化(SELAX)TFT用于低功耗高性能显示电路。在这两种混合型的TFT中... 应用低压多晶硅TFT和高压多晶硅TFT组合开发成功高分辨率(>300ppi)LCD/OEL显示系统,也就是说,将受激准分子激光结晶化(ELC)TFT用于耐高压显示电路,而将选择扩大激光结晶化(SELAX)TFT用于低功耗高性能显示电路。在这两种混合型的TFT中,扩大激光结晶化(SELAX)TFT成功地整合了显示系统大电流驱动的可靠性。 展开更多
关键词 低温多晶硅 激光结晶 扩大激光结晶 耗尽雪崩热载流子
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激光干涉结晶法制备三维有序分布的nc-Si阵列 被引量:2
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作者 王晓伟 王立 +4 位作者 马忠元 鲍云 徐骏 黄信凡 陈坤基 《中国激光》 EI CAS CSCD 北大核心 2002年第4期363-365,共3页
利用准分子激光干涉结晶法使a Si∶H/a SiNx∶H多层膜中的超薄a Si∶H层定域晶化 ,成功地制备出三维有序分布的nc Si阵列。原子力显微镜 (AFM )、微区拉曼 (micro Raman)光谱及剖面透射电子显微镜 (X TEM)的分析结果揭示在晶化薄膜中已... 利用准分子激光干涉结晶法使a Si∶H/a SiNx∶H多层膜中的超薄a Si∶H层定域晶化 ,成功地制备出三维有序分布的nc Si阵列。原子力显微镜 (AFM )、微区拉曼 (micro Raman)光谱及剖面透射电子显微镜 (X TEM)的分析结果揭示在晶化薄膜中已形成平均尺寸约为 3 6nm ,横向周期 2 μm ,纵向周期与a Si∶H/a SiNx∶H多层膜周期 (14nm)相等的nc Si阵列。 展开更多
关键词 激光干涉结晶 制备 三维有序分布 nc-Si阵列 纳米硅
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用透射电镜和Raman谱研究非晶硅晶化过程
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作者 顾清 鲍希茂 《南京大学学报(自然科学版)》 CAS CSCD 1991年第4期667-672,共6页
本文报道了利用透射电子显微镜和Raman谱两种方法对a-Si:H激光结晶过程的研究。结果表明结晶后得到的四个结晶区中LP-LCR,OD是液相结晶区,LP-LCR晶粒尺寸达到做器件水平。FCR-2,FCR-1是固相结晶区。利用温场模型对结品过程中的现象做了... 本文报道了利用透射电子显微镜和Raman谱两种方法对a-Si:H激光结晶过程的研究。结果表明结晶后得到的四个结晶区中LP-LCR,OD是液相结晶区,LP-LCR晶粒尺寸达到做器件水平。FCR-2,FCR-1是固相结晶区。利用温场模型对结品过程中的现象做了解释。并且对两种观察方法进行了比较。 展开更多
关键词 非晶硅 激光结晶 喇曼谱 透射电镜
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低温多晶Si TFT-LCD技术
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作者 杨庆祥 张凤翙 《真空电子技术》 2002年第6期32-35,共4页
介绍了大面积低温多晶Si薄膜晶体管液晶显示技术的发展水平。最近 ,低温多晶Si薄膜晶体管业已取得很大进展 ,比如高质量多晶Si薄膜的受激准分子激光退火 (激光再结晶 )工艺 ,大面积掺杂用离子掺杂工艺 ,以及低温原子团簇射式化学汽相沉... 介绍了大面积低温多晶Si薄膜晶体管液晶显示技术的发展水平。最近 ,低温多晶Si薄膜晶体管业已取得很大进展 ,比如高质量多晶Si薄膜的受激准分子激光退火 (激光再结晶 )工艺 ,大面积掺杂用离子掺杂工艺 ,以及低温原子团簇射式化学汽相沉积工艺。 展开更多
关键词 低温 多晶硅 薄膜晶体管液晶显示 受激准分子激光退火 激光结晶 簇射式化学汽相沉积
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激光干涉结晶法制备一维周期结构的纳米硅阵列
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作者 姚尧 方忠慧 +7 位作者 周江 李伟 马忠元 徐骏 黄信凡 陈坤基 宫本恭幸 小田俊理 《物理学报》 SCIE EI CAS CSCD 北大核心 2008年第8期4960-4965,共6页
利用激光干涉结晶方法,采用周期为400nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域... 利用激光干涉结晶方法,采用周期为400nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明:1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si:H膜厚度从10nm降至4nm,通过控制激光的能量密度,每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显示出清晰的nc-Si晶格像. 展开更多
关键词 纳米硅 激光干涉结晶 移相光栅 定域晶化
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The Induction Period of Hydrate Formation in a Flow System 被引量:2
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作者 孙长宇 陈光进 岳国良 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2004年第4期527-531,共5页
The appearance of turbidity due to large numbers of critical size hydrate nuclei may significantly affect the outgoing light intensity and the flow resistance in the pipe loop. The induction period of hydrate formatio... The appearance of turbidity due to large numbers of critical size hydrate nuclei may significantly affect the outgoing light intensity and the flow resistance in the pipe loop. The induction period of hydrate formation was determined by analyzing the experimental data——either based on the shading ratio data of laser detector or based on the pressure drop data of the flow system. The induction period of CC12F2 (R12) in pure water and that of CH4 in (tetrahydrofuran + water) systems were then measured with the above two methods. Experimental data show that the induction period depends on the driving force exponentially. Flow rate also has a significant influence on the hydrate nucleation. A new induction period model taking the driving force and liquid flow rate into account was proposed. And it is successfully applied to the calculation of the induction period, which is in good agreement with the experimental data obtained in this study. 展开更多
关键词 HYDRATE induction period FLOW LASER MODEL
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Structure of Low Temperature Phase b-Ba_3Y(BO_3)_3 Crystal 被引量:1
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作者 PANShang-Ke WANGGuo-Fu 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 北大核心 2003年第2期187-189,共3页
Crystals of the low temperature phase b-Ba3Y(BO3)3 have been synthesized by the flux method. The structure of the title compound crystallizes in the hexagonal system, space group P63cm with the following parameters: a... Crystals of the low temperature phase b-Ba3Y(BO3)3 have been synthesized by the flux method. The structure of the title compound crystallizes in the hexagonal system, space group P63cm with the following parameters: a = 9.416(3), c = 17.536(8) ? V = 1346.6(8) ?, Ba3YB3O9, Mr = 677.36, Z = 6, Dc = 5.012 g/cm3, l(MoKa) = 0.71073 ? m = 19.409 mm-1, Flack parameter = 0.02(3), F(000) = 1764, R = 0.0714 and wR = 0.1696 for 1076 observed reflections with I > 2s(I). The compound contains two sets of YO6 octahedra, four sets of BaO9 polyhedra and three sets of BO3 planar triangles. 展开更多
关键词 SYNTHESIS crystal structure double borate
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Effects of laser surface melting on crystallographic texture, microstructure, elastic modulus and hardness of Ti-30Nb-4Sn alloy 被引量:2
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作者 Leonardo FANTON Nelson Batista de LIMA +3 位作者 Emilio Rayon ENCINAS Vicente Amigo BORRAS Conrado Ramos Moreira AFONSO Joao Batista FOGAGNOLO 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2020年第2期392-404,共13页
The biocompatibility of orthopedic implants is closely related to their elastic modulus and surface properties.The objective of this study was to determine the effects of cold rolling,recrystallization and laser surfa... The biocompatibility of orthopedic implants is closely related to their elastic modulus and surface properties.The objective of this study was to determine the effects of cold rolling,recrystallization and laser surface melting(LSM)on the microstructure and mechanical properties of a biphase(α″+β)Ti-30Nb-4Sn alloy.X-ray diffraction(XRD)texture analysis of the cold-rolled substrate revealed the[302]α″//ND texture component,while analysis of the recrystallized substrate showed the[302]α″//ND and[110]α″//ND components.Theβ-phase texture could not be directly measured by XRD,but the presence of the[111]β//ND texture component was successfully predicted by considering the orientation relationship between theα″andβphases.Nanoindentation measurements showed that the elastic modulus of the cold-rolled substrate(63GPa)was lower than that of the recrystallized substrate(74GPa).Based on the available literature and the results presented here,it is suggested that this difference is caused by the introduction of crystal defects during cold deformation.The combined nanoindentation/EBSD analysis showed that the nanoindentation results are not affected by crystal orientation.LSM of the deformed alloy produced changes in hardness,elastic modulus and crystallographic texture similar to those produced by recrystallization heat treatment,creating a stiffness gradient between surface and substrate. 展开更多
关键词 titanium alloy cold rolling laser surface melting RECRYSTALLIZATION crystallographic texture stiffness-graded material
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Poly-Si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis
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作者 ZENGXiang-bin XUZhong-yang 《Semiconductor Photonics and Technology》 CAS 2000年第2期96-99,104,共5页
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103... A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results. 展开更多
关键词 POLY-SI Thin film Laser crystallization Thin film transistors
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Diode-pumped Nd:YAG/LBO CW yellow laser at 588.9 nm
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作者 BU Yi-kun ZHENG Quan +2 位作者 XUE Qing-hua JIA Fu-qiang QIAN Long-sheng 《Optoelectronics Letters》 EI 2005年第1期30-32,共3页
A design of diode-pumped Nd.YAG laser with a single crystal that generates simultaneous laser action at the wavelengths of 1064 nm and 1319 nm was presented and continuous-wave (CW) of 588.9 nm was obtained for the ... A design of diode-pumped Nd.YAG laser with a single crystal that generates simultaneous laser action at the wavelengths of 1064 nm and 1319 nm was presented and continuous-wave (CW) of 588.9 nm was obtained for the first time by use of type-I critical phase-matching LBO crystal intracavity sumfrequency mixing. The maximum output power of 62 mW is achieved with an incident pump power of 1.8 W. The optical-to-optical conversion efficiency is up to 3.4% ,and the power instability in 24 h is better than ± 2.7 %. 展开更多
关键词 二极管 激光 单晶体结构 波长 连续波
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Growth and Characteristics of Nd^(3+):GdAl_3(BO_3)_4 Crystal
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作者 TU Chao-Yang② ZHU Zhao-Jie LI Jian-Fu WU Bai-Chang (Fujian Institute of Research on the Structure of Matter, The Chinese Academy of Sciences, Fuzhou, Fujian 350002, China) BRENIER Alain (Laboratoire de Physico-Chimie des Mat閞iaux Luminescents, Universit?Claude Bernard-Lyon1,UMR CNRS 5620, France) 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 北大核心 2003年第2期169-173,共5页
Nd3+:GdAl3(BO3)4 (NGAB) crystal with the size of 30 mm was grown from the solvent system of K2O-Gd2O3-MoO3-B2O3 by combining accelerated seed rotation technology with medium seeded solution growth (MSSG) method, and i... Nd3+:GdAl3(BO3)4 (NGAB) crystal with the size of 30 mm was grown from the solvent system of K2O-Gd2O3-MoO3-B2O3 by combining accelerated seed rotation technology with medium seeded solution growth (MSSG) method, and its crystal structure has been determined by X-ray powder diffraction. It crystallizes in the trigonal system, space group R32 with a = 9.2734(2), c = 7.2438(1) ? V = 538 ?, Z = 3 and Dc = 4.379 g/cm3. The absorption and emission spectra of NGAB in the function of s and polarizations at room temperature have been measured. UV generation tuneable in 378~382 nm, green (531 nm) generation and blue generation tuneable in 436~443 nm as well as red (669 nm) generation by self-frequency changing were obtained with the output of 105, 119.5, 445 and 19 mJ/pulse, respectively, when the crystal was pumped by a dye laser. 展开更多
关键词 flux crystal growth Nd3+:GdAl3(BO3)4 crystal self-frequency changing laser
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Physics of Power Semiconductor Streamer Laser
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作者 Valentin V. Parashchuk 《Journal of Physical Science and Application》 2014年第6期398-402,共5页
It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of th... It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal. 展开更多
关键词 Power semiconductor lasers pumping by streamer discharge effect of light auto-channelling (self-trapping) n2 0 and n4〈 0 nonlinearity combined n2 n4 effect symmetry of crystallographic directions system of streamer discharges.
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