A new Eu（III） complex, EuL3（phen）, was synthesized, where L is the abbreviation of de- protonated 1-（7-（tert-butyl）-9-ethyl-gH-carbazol-2-yl）-4,4,4-trifluorobutane-l,3-dione （HL）, phen is the abbreviation of...A new Eu（III） complex, EuL3（phen）, was synthesized, where L is the abbreviation of de- protonated 1-（7-（tert-butyl）-9-ethyl-gH-carbazol-2-yl）-4,4,4-trifluorobutane-l,3-dione （HL）, phen is the abbreviation of 1,10-phenanthroline. The Eu（III） complex was characterized by element analysis, IR, 1H NMR, UV-visible absorption spectroscopy, thermogravimetric anal- ysis （TGA）, and photoluminescence measurements （PL）. TGA shows that thermal stability of the complex is up to 325 ~C. PL measurement indicates that the Eu（III） complex exhibits intense red-emission and extends their excitation bands to visible region. LEDs device was successfully fabricated by precoating complex EuL3 （phen） onto 460 nm blue-emitting InGaN chip. The emission of device shows that the complex can act as red phosphor in combination with 460 nm blue-emitting chips. This europium complex based on 1-（7-（tert-butyl）-9- ethyl-9H-carbazol-2-yl）-4,4,4-trifluorobutane-l,3-dione is a kind of interesting red-emitting material excited by blue light, which could avoid the damage of excitation by UV light.展开更多
Laser-induced fluorescence excitation spectra and dispersed fluorescence spectra of cobalt sulfide （COS） have been recorded in the energy range of 22400-24400 cm-1 （corresponding to 446-409 nm）. A new electronic t...Laser-induced fluorescence excitation spectra and dispersed fluorescence spectra of cobalt sulfide （COS） have been recorded in the energy range of 22400-24400 cm-1 （corresponding to 446-409 nm）. A new electronic transition progression with six vibronic bands, stemming from the X4AT/2 state of CoS, was identified and assigned to be [24.0014AT/2-X4A7/2. The new observed 4A state most probably originates from the core[10a2][47r3][lla2][153][57r3] electronic configuration. Strong perturbations are found to extensively exist in the transition bands of this new state. The rotational constants and lifetimes of these bands have been determined.展开更多
The absorption spectrum of NiI between 445 and 510 nm has been investigated using the technique of laser vaporization/reaction with free jet expansion and cavity ring down laser absorption spectroscopy. Two new transi...The absorption spectrum of NiI between 445 and 510 nm has been investigated using the technique of laser vaporization/reaction with free jet expansion and cavity ring down laser absorption spectroscopy. Two new transitions namely,[21.3]^2△5/2-X^2△5/2 and [21.9]^2Ⅱ3/2-X^2△5/2 systems were identified and studied. Spectra of both ^58NiI and ^60NiI isotopic molecules were observed. Equilibrium molecular constants for both electronic states are reported and the equilibrium bond length for the [21.3]^2△5/2 state and the[21.9]^2Ⅱ3/2 state was respectively determined to be 2.431 and 2.481 A.展开更多
A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Sil...A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor(EF) up to 3×10 7 of such SERS substrates for rhodamine 6G(R6G) at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.展开更多
文摘A new Eu（III） complex, EuL3（phen）, was synthesized, where L is the abbreviation of de- protonated 1-（7-（tert-butyl）-9-ethyl-gH-carbazol-2-yl）-4,4,4-trifluorobutane-l,3-dione （HL）, phen is the abbreviation of 1,10-phenanthroline. The Eu（III） complex was characterized by element analysis, IR, 1H NMR, UV-visible absorption spectroscopy, thermogravimetric anal- ysis （TGA）, and photoluminescence measurements （PL）. TGA shows that thermal stability of the complex is up to 325 ~C. PL measurement indicates that the Eu（III） complex exhibits intense red-emission and extends their excitation bands to visible region. LEDs device was successfully fabricated by precoating complex EuL3 （phen） onto 460 nm blue-emitting InGaN chip. The emission of device shows that the complex can act as red phosphor in combination with 460 nm blue-emitting chips. This europium complex based on 1-（7-（tert-butyl）-9- ethyl-9H-carbazol-2-yl）-4,4,4-trifluorobutane-l,3-dione is a kind of interesting red-emitting material excited by blue light, which could avoid the damage of excitation by UV light.
文摘Laser-induced fluorescence excitation spectra and dispersed fluorescence spectra of cobalt sulfide （COS） have been recorded in the energy range of 22400-24400 cm-1 （corresponding to 446-409 nm）. A new electronic transition progression with six vibronic bands, stemming from the X4AT/2 state of CoS, was identified and assigned to be [24.0014AT/2-X4A7/2. The new observed 4A state most probably originates from the core[10a2][47r3][lla2][153][57r3] electronic configuration. Strong perturbations are found to extensively exist in the transition bands of this new state. The rotational constants and lifetimes of these bands have been determined.
文摘The absorption spectrum of NiI between 445 and 510 nm has been investigated using the technique of laser vaporization/reaction with free jet expansion and cavity ring down laser absorption spectroscopy. Two new transitions namely,[21.3]^2△5/2-X^2△5/2 and [21.9]^2Ⅱ3/2-X^2△5/2 systems were identified and studied. Spectra of both ^58NiI and ^60NiI isotopic molecules were observed. Equilibrium molecular constants for both electronic states are reported and the equilibrium bond length for the [21.3]^2△5/2 state and the[21.9]^2Ⅱ3/2 state was respectively determined to be 2.431 and 2.481 A.
基金supported by the National Natural Science Foundation of China (Grant Nos.51271092 and 11274160)
文摘A rapid and simple approach to fabricate large-area surface-enhanced Raman scattering-active(SERS-active) substrates is reported.The substrates are fabricated by using femtosecond laser(fs-laser) direct writing on Silicon wafers,followed by thin-film coating of metal such as gold.The substrates are demonstrated to exhibit signal homogeneity and good enhancement ability for SERS.The maximum enhancement factor(EF) up to 3×10 7 of such SERS substrates for rhodamine 6G(R6G) at 785 nm excitation wavelength was measured.This technique could demonstrate a functional microchip with SERS capability of signal homogeneity,high sensitivity and chemical stability.
