All-optical coherent control of optical bistability(OB) and optical multistability(OM) in the 4.8 nm Zn Se single-quantum well based on excitons and biexciton transitions is investigated. By applying a pair of phase-l...All-optical coherent control of optical bistability(OB) and optical multistability(OM) in the 4.8 nm Zn Se single-quantum well based on excitons and biexciton transitions is investigated. By applying a pair of phase-locked laser pulses all-optical coherent control can be obtained. Theoretical analysis with density matrix and Maxwell equations then yield the optical bistability and optical multistability. It is shown that by controlling the coherent and incoherent processes, the intensity threshold of OB and OM can be modified. Also, it is found that the switching between OB and OM or vice versa can be occurred for some controllable parameters.展开更多
Y2000-62067-109 0009226InGaN-AlGaN 量子线及量子点激光器中激子跃迁形成的阈电流密度减少=Reduction of threshold currentdensity in InGaN-AlGaN quantum wire and quantum dotlasers due to excitonic transitions[会,英]/Huang,W...Y2000-62067-109 0009226InGaN-AlGaN 量子线及量子点激光器中激子跃迁形成的阈电流密度减少=Reduction of threshold currentdensity in InGaN-AlGaN quantum wire and quantum dotlasers due to excitonic transitions[会,英]/Huang,W.&Jain,F.//1998 IEEE International Conference on Opto-electronic and Microelectronic Materials and Devices.—109～115(EC)展开更多
文摘All-optical coherent control of optical bistability(OB) and optical multistability(OM) in the 4.8 nm Zn Se single-quantum well based on excitons and biexciton transitions is investigated. By applying a pair of phase-locked laser pulses all-optical coherent control can be obtained. Theoretical analysis with density matrix and Maxwell equations then yield the optical bistability and optical multistability. It is shown that by controlling the coherent and incoherent processes, the intensity threshold of OB and OM can be modified. Also, it is found that the switching between OB and OM or vice versa can be occurred for some controllable parameters.
文摘Y2000-62067-109 0009226InGaN-AlGaN 量子线及量子点激光器中激子跃迁形成的阈电流密度减少=Reduction of threshold currentdensity in InGaN-AlGaN quantum wire and quantum dotlasers due to excitonic transitions[会,英]/Huang,W.&Jain,F.//1998 IEEE International Conference on Opto-electronic and Microelectronic Materials and Devices.—109～115(EC)
