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垂直腔面发射激光器氧化孔结构对器件激射性能的影响 被引量:3
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作者 梁静 贾慧民 +5 位作者 冯海通 唐吉龙 房丹 苏瑞巩 张宝顺 魏志鹏 《中国激光》 EI CAS CSCD 北大核心 2019年第3期12-17,共6页
为实现894.6 nm低阈值、高稳定性、单模激光输出,设计了具有不同台面刻蚀结构的垂直腔面发射激光器(VCSEL)器件,研究了台面直径和氧化孔结构对器件激射性能的影响。研究结果表明:VCSEL台面直径越大,阈值电流越大;氧化孔径越偏向圆形,边... 为实现894.6 nm低阈值、高稳定性、单模激光输出,设计了具有不同台面刻蚀结构的垂直腔面发射激光器(VCSEL)器件,研究了台面直径和氧化孔结构对器件激射性能的影响。研究结果表明:VCSEL台面直径越大,阈值电流越大;氧化孔径越偏向圆形,边模抑制比越高。制备了氧化孔为圆形、直径为4.4μm的VCSEL器件,该器件在70~90℃工作温度及0.6 mA驱动电流下实现了894.6 nm单模激光输出,边模抑制比高于35 dB。 展开更多
关键词 光器 垂直腔面发光器 台面结构 氧化孔 激射性能 边模抑制比
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Stimulated Raman Scattering in Nanorod Silicon Carbide Films
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作者 ZHANG Hong tao, XU Zhong yang (Dept. of Electronics Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, CHN) 《Semiconductor Photonics and Technology》 CAS 2002年第1期32-36,共5页
When the film is excited by a very low excitation energy, thespontaneous Raman scattering emerges. The intensity of Ramanscattering is proportional to the Excitation power below thethreshold excitation. When the excit... When the film is excited by a very low excitation energy, thespontaneous Raman scattering emerges. The intensity of Ramanscattering is proportional to the Excitation power below thethreshold excitation. When the excited power reaches the Excitationthreshold, the intensity of Stokes light strongly increases.Meanwhile an anti- Stokes light at 495 nm and multiple order butsmall Stokes peaks occur. The intensity of Stokes light is muchlarger than that of anti-Stokes. 展开更多
关键词 Nanosructured film silicon carbide stimulated raman scattering opticalproperty
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Properties of fluoride film and its effect on electroless nickel deposition on magnesium alloys 被引量:4
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作者 刘新宽 刘子利 +3 位作者 刘平 向阳辉 胡文斌 丁文江 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2010年第11期2185-2191,共7页
The physical characteristics and microstructure of the fluoride film formed during activation were investigated using SEM,XPS and SAM,and its stability in electroless nickel(EN) bath was analyzed.The effects of the fl... The physical characteristics and microstructure of the fluoride film formed during activation were investigated using SEM,XPS and SAM,and its stability in electroless nickel(EN) bath was analyzed.The effects of the fluoride film on EN deposition were studied additionally.The results show that the fluoride film on magnesium alloys is a kind of porous film composed of MgF2 with thickness of 1.6-3.2 μm.The composition of the activation bath and pretreatment of EN processing have influence on the composition of the fluoride film.The fluoride is stable and dissolves little in EN bath;as a result,the fluoride film can protect magnesium substrate from the corrosion of EN bath.The composition of fluoride determines the initial deposition of EN and part of the fluoride film finally exists as inclusion in EN coating. 展开更多
关键词 magnesium alloys electroless nickel plating fluoride film
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Giant negative photoresistance of epitaxial manganite La_(2/3)Ca_(1/3)MnO_(3-δ) film
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作者 XI JianFeng ZHAO Kun +5 位作者 NI Hao XIANG WenFeng FENG Xin SUN Qi LU ZhiQing XIAO LiZhi 《Science China Chemistry》 SCIE EI CAS CSCD 2015年第12期200-206,共7页
The La2/3Cal/3Mn03_σ film has been deposited on the (001) SrTiO3 substrate and its temper- ature-dependent photoconductive properties have been investigated from 80 to 300 K. The La2/3Cal/3MnO3-σ film has a novel ... The La2/3Cal/3Mn03_σ film has been deposited on the (001) SrTiO3 substrate and its temper- ature-dependent photoconductive properties have been investigated from 80 to 300 K. The La2/3Cal/3MnO3-σ film has a novel photoelectric property due to its oxygen-deficient structure. We observed laser-induced giant negative photoresistance of the sample in a wide temperature range. The change rate of negative photoresistance was nearly 100% at the low temperature when the sample was irradiated by 532 nm laser. In addition, this effect was sensitive to the power of laser irradiation. The oxygen-deficiency of La2/3Cal/3Mn03-σ film seems to have an impact on the laser-induced resistance variation. The experimental results made the La2/3Cal/3MnO3_σ film a promising application as a photoswitch device. 展开更多
关键词 giant negative photoresistance oxygen-deficient PHOTOSWITCH thin film manganite oxide
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Design of large acceptance angle polarizing beam splitter for laser-based displays 被引量:1
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作者 刘哲 蔡志平 +1 位作者 黄莎玲 卜轶坤 《Optoelectronics Letters》 EI 2011年第4期256-259,共4页
The performance of broadband polarizing beam splitters(PBSs) is sensitive to the incident angle.By taking account of the spectrum of the laser source and using the needle optimization method,a large acceptance angle P... The performance of broadband polarizing beam splitters(PBSs) is sensitive to the incident angle.By taking account of the spectrum of the laser source and using the needle optimization method,a large acceptance angle PBS for laser-based displays is designed.The average degrees of polarization in transmission and reflection can reach 0.989 and 0.980 for an acceptance angle of 13.6?in air using two materials,while better results of 0.993 and 0.989 for an acceptance angle of 14.8?in air are attained when three common materials are used.Both designs consist of 40 layers. 展开更多
关键词 Optical beam splitters Optical instruments PRISMS
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Improvement of slow light performance for vertical-cavity surface-emitting laser using coupled cavity structure 被引量:1
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作者 马雅男 罗斌 +5 位作者 潘炜 闫连山 邹喜华 易安林 叶佳 温坤华 《Optoelectronics Letters》 EI 2012年第6期405-408,共4页
We propose a vertical cavity semiconductor emitting laser(VCSEL)using a coupled-cavity(CC)design to broaden the bandwidths of gain and delay spectra.The structure is formed by constructing a passive cavity coupled wit... We propose a vertical cavity semiconductor emitting laser(VCSEL)using a coupled-cavity(CC)design to broaden the bandwidths of gain and delay spectra.The structure is formed by constructing a passive cavity coupled with the active cavity.By rendering the strength of the two resonant cavities,the increased gain bandwidth by 340%and the increased delay bandwidth by 800%are achieved as compared with the signal-cavity(SC)VCSEL.The wideband spectra present more square-like passband which is expected for slow light system.By using it,a 20 Gbit/s super Gaussian signal is delayed by about 13 ps with high quality. 展开更多
关键词 LASERS Slow light
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