A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface...A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.展开更多
The theory of three-dimensional discrete transfer radiation model is expounded in detail in this paper. The computer program has also been written using this method here. Two kinds of radiation heat transfer problemS...The theory of three-dimensional discrete transfer radiation model is expounded in detail in this paper. The computer program has also been written using this method here. Two kinds of radiation heat transfer problemS have been simulate with numerical method using the computer program, and the predictions carried out are quite in agreement with the exed results. It shows that the threedimensional discrete transfer radiation model is one of the suitable way to obtain heat flux and temperature in various applications.展开更多
On the basis of a wide range survey of various models or treatment methods for the calculation of radiative properties of gases, box model, which is similar to the gray band approximation of spectral band model, was a...On the basis of a wide range survey of various models or treatment methods for the calculation of radiative properties of gases, box model, which is similar to the gray band approximation of spectral band model, was applied to evaluate the gas properties in this paper. In order to compare the accuracy of box model with that of gray band approximation of spectral band models, a typical one-dimensional gas radiation problem was analyzed using discrete ordinate method. Comparing with the widely used gray band approximation of narrow band model or exponential wide band model, box model can well evaluate the radiation source term of the radiative problem. It also has the advantages of simplicity and easy to code, so it is practicable and useful for some complex engineering problems.展开更多
基金Project(N110204015)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2012M510075)supported by the China Postdoctoral Science Foundation
文摘A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.
文摘The theory of three-dimensional discrete transfer radiation model is expounded in detail in this paper. The computer program has also been written using this method here. Two kinds of radiation heat transfer problemS have been simulate with numerical method using the computer program, and the predictions carried out are quite in agreement with the exed results. It shows that the threedimensional discrete transfer radiation model is one of the suitable way to obtain heat flux and temperature in various applications.
基金the National Natural Science Foundation of China (No.50074006)
文摘On the basis of a wide range survey of various models or treatment methods for the calculation of radiative properties of gases, box model, which is similar to the gray band approximation of spectral band model, was applied to evaluate the gas properties in this paper. In order to compare the accuracy of box model with that of gray band approximation of spectral band models, a typical one-dimensional gas radiation problem was analyzed using discrete ordinate method. Comparing with the widely used gray band approximation of narrow band model or exponential wide band model, box model can well evaluate the radiation source term of the radiative problem. It also has the advantages of simplicity and easy to code, so it is practicable and useful for some complex engineering problems.
