The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creati...The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creation of the defects which are called latent tracks. Several models were tested for explaining the track formation in semiconductors irradiated with swift heavy ions, one of them is the thermal spike model. This work shows that the experimental data obtained in semiconductors, in our case in InP irradiated with swift heavy ions can be described on the basis of the thermal spike model. The experimental results obtained on InP have allowed the parameters of this model to be understood. The only free parameter is the electron-phonon coupling constant g which is unknown in InP This model allows the evolution of track radii to be found as a function of electronic stopping power （dE/dx）e for different beam energies. For InP a good agreement is observed between calculated track radii and experimental ones on one hand, and on the other hand between calculated and experimental threshold value of electronic stopping power. This allows determining the electron-phonon coupling value for InP to be equal 0.9 × 10%11 Wcm-3K-land the （dE/dx）e threshold for latent track formation in InP equal 27 ＋ 3 keV/nm for ion energies ranging from 0.4-10 MeV/amu.展开更多
文摘The interaction of the heavy charged particles, of energy higher than a few MeV/amu with semiconductor single crystals can lead to the structural modification of their physical properties and participate at the creation of the defects which are called latent tracks. Several models were tested for explaining the track formation in semiconductors irradiated with swift heavy ions, one of them is the thermal spike model. This work shows that the experimental data obtained in semiconductors, in our case in InP irradiated with swift heavy ions can be described on the basis of the thermal spike model. The experimental results obtained on InP have allowed the parameters of this model to be understood. The only free parameter is the electron-phonon coupling constant g which is unknown in InP This model allows the evolution of track radii to be found as a function of electronic stopping power （dE/dx）e for different beam energies. For InP a good agreement is observed between calculated track radii and experimental ones on one hand, and on the other hand between calculated and experimental threshold value of electronic stopping power. This allows determining the electron-phonon coupling value for InP to be equal 0.9 × 10%11 Wcm-3K-land the （dE/dx）e threshold for latent track formation in InP equal 27 ＋ 3 keV/nm for ion energies ranging from 0.4-10 MeV/amu.
