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RF溅射淀积Ce∶YIG磁光薄膜的热处理结晶化研究 被引量:2
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作者 黄强 冯则坤 何华辉 《功能材料》 EI CAS CSCD 北大核心 1998年第1期24-26,共3页
基片温度低于溅射外延条件 ,采用低溅射功率密度磁控溅射沉积 ,进行后期热处理结晶化 ,制备出膜厚为 30 0 nm的掺铈钇铁石榴石 Ce∶ YIG磁光薄膜。对热处理前后的磁光特性进行比较 ,并分析了热处理结晶化过程中附属相的变化。薄膜在空... 基片温度低于溅射外延条件 ,采用低溅射功率密度磁控溅射沉积 ,进行后期热处理结晶化 ,制备出膜厚为 30 0 nm的掺铈钇铁石榴石 Ce∶ YIG磁光薄膜。对热处理前后的磁光特性进行比较 ,并分析了热处理结晶化过程中附属相的变化。薄膜在空气中热处理结晶化温度在 650℃附近。热处理后 ,室温下 633nm处其法拉第旋转系数约为 1.9× 10 4 deg/ cm,光吸收系数为 2 50 0 cm-1。 展开更多
关键词 热处理结晶化 Ce:YIG 薄膜 RF溅射 磁光薄膜
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Effects of heat treatment temperature on crystallization and thermal expansion coefficient of Li_2O-Al_2O_3-SiO_2 被引量:1
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作者 卢安贤 贾明 刘树江 《Journal of Central South University of Technology》 EI 2004年第3期235-238,共4页
The basic glass of Li2O-Al2O3-SiO2 system using P2O5 as nucleator was prepared by means of conventional melt quenching technology, and the heat-treatment process was determined by using differential thermal analysis. ... The basic glass of Li2O-Al2O3-SiO2 system using P2O5 as nucleator was prepared by means of conventional melt quenching technology, and the heat-treatment process was determined by using differential thermal analysis. The crystalline phases and the microstructure of the glass-ceramics were investigated by using X-ray diffraction and scanning electron microscopy. The results show that the glass based on Li2O-Al2O3-SiO2 oxides using P2O5 as nucleator can be prepared at lower melt temperature of 1 450 ℃ and the glass-ceramics with lower thermal expansion coefficient of 21.6×10-7 ℃-1 can also be obtained at 750 ℃. The glass-ceramics contain a few crystal phases in which the main crystal phase is β-quartz solid solution and the second crystal phase is β-spodumene solid solution. When the heat treatment temperature is not higher than 650 ℃, the transparent glass-ceramics containing β-quartz solid solution can be prepared. β-quartz solid solution changes into β-spodumene solid solution at about 750 ℃. And the appearance of the glass-ceramics changes from translucent, part opaque to complete opaque with increasing (temperature.) 展开更多
关键词 heat treatment GLASS-CERAMICS CRYSTALLIZATION thermal expansion coefficient
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