Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of H...Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.展开更多
Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect ...Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.展开更多
This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the li...This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.展开更多
We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients...We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated greatly exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.展开更多
Because of the toxicity of Gd(Ⅲ)complexes and the poor T1 magnetic resonance imaging(MRI)contrast of superparamagnetic iron oxide,the development of new stable,non-toxic,and efficient contrast agents is desirable.Her...Because of the toxicity of Gd(Ⅲ)complexes and the poor T1 magnetic resonance imaging(MRI)contrast of superparamagnetic iron oxide,the development of new stable,non-toxic,and efficient contrast agents is desirable.Herein,tannic acid(TA),a large natural polyphenol,and bovine serum albumin(BSA)were used to construct non-toxic Fe(Ⅲ)complexes with increased relaxivity based on a strategy slowing the molecular spin.Compared with the commercial T1 contrast agent Magnevist■,TA-Fe@BSA not only exhibits comparable T1 MRI contrast enhancement under 0.5,1 and 7 T magnetic fields both in vitro and in vivo,but also has better stability and biocompatibility.Moreover,TA-Fe@BSA with near-infrared(NIR)absorption demonstrates efficient tumor ablation via photothermal effects.These results demonstrate their strong potential as an alternative T1 MRI contrast agent and tumor theranostics agent in clinical settings.展开更多
文摘Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.
基金Supported by the National Defense Preresearch Fund Program(No.99J8.1.1.DZD132)
文摘Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.
文摘This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.
文摘We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated greatly exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.
基金the National Natural Science Foundation of China(91959105 and 21671135)Shanghai Sailing Program(19YF1436200)+2 种基金Shanghai Rising-Star Program(17QA1402600)Shanghai Talent Development Fund(2018082)Shanghai Engineering Research Center of Green Energy Chemical Engineering(18DZ2254200)。
文摘Because of the toxicity of Gd(Ⅲ)complexes and the poor T1 magnetic resonance imaging(MRI)contrast of superparamagnetic iron oxide,the development of new stable,non-toxic,and efficient contrast agents is desirable.Herein,tannic acid(TA),a large natural polyphenol,and bovine serum albumin(BSA)were used to construct non-toxic Fe(Ⅲ)complexes with increased relaxivity based on a strategy slowing the molecular spin.Compared with the commercial T1 contrast agent Magnevist■,TA-Fe@BSA not only exhibits comparable T1 MRI contrast enhancement under 0.5,1 and 7 T magnetic fields both in vitro and in vivo,but also has better stability and biocompatibility.Moreover,TA-Fe@BSA with near-infrared(NIR)absorption demonstrates efficient tumor ablation via photothermal effects.These results demonstrate their strong potential as an alternative T1 MRI contrast agent and tumor theranostics agent in clinical settings.
