应力诱发的电迁移失效分析

电迁移是半导体器件常见的失效机理,可以导致金属的桥连或者产生空洞,引起短路或者开路等互连失效。总结了两种典型的电迁移失效模式:热电迁移和电化学迁移,阐述了两种电迁移的失效应力诱发条件,以及失效分析方法。通过失效分析案例研究,加深对两种失效机理的认识并提供电迁移失效分析的基本思路。

Electrochemical migration behavior and mechanism of PCB-ImAg and PCB-HASL under adsorbed thin liquid films

The electrochemical migration（ECM） behavior and mechanism of immersion silver processing circuit board（PCB-ImAg）and hot air solder leveling circuit board（PCB-HASL） under the 0.1 mol/L Na2SO4 absorbed thin liquid films with different thicknesses were investigated using stereo microscopy and scanning electron microscopy（SEM）.Meanwhile,the corrosion tendency and kinetics rule of metal plates after bias application were analyzed with the aid of electrochemical impedance spectroscopy（EIS）and scanning Kelvin probe（SKP）.Results showed that under different humidity conditions,the amount of migrating corrosion products of silver for PCB-ImAg was limited,while on PCB-HASL both copper dendrites and precipitates such as sulfate and metal oxides of copper/tin were found under a high humidity condition（exceeding 85%）.SKP results indicated that the cathode plate of two kinds of PCB materials had a higher corrosion tendency after bias application.An ECM model involving multi-metal reactions was proposed and the differences of ECM behaviors for two kinds of PCB materials were compared.

Excellent thermoelectric performance of boron-doped n-type Mg_(3)Sb_(2)-based materials via the manipulation of grain boundary scattering and control of Mg content

Thermoelectric devices require thermoelectric materials with high figure-of-merit(ZT)values in the operating temperature range.In recent years,the Zintl phase compound,n-Mg_(3)Sb_(2),has received much attention owing to its rich chemistry and structural complexity.However,it hardly achieves high ZT values throughout the medium temperature range.Herein,by increasing the sintering temperature as much as possible,we successfully increased the average grain size of the compound by 15 times,and the grain boundary scattering was manipulated to obtain high carrier mobility of up to 180 cm^(2)V^(-1)s^(-1).Simultaneously,we optimized the Mg content for ultralow lattice thermal conductivity.We first doped the Mg_(3)Sb_(2)-based materials with boron for higher sintering temperature,good thermal stability,and higher hardness.The synergistic optimization of electrical and thermal transport resulted in excellent ZT values(0.62 at 300 K,1.81 at 773 K)and an average ZT of 1.4(from300 to 773 K),which are higher than the state-of-the-art values for n-type thermoelectric materials,demonstrating a high potential in device applications.

Low carrier concentration leads to high in-plane thermoelectric performance in n-type SnS crystals

As a simple binary compound, p-type SnS shows great competitiveness in thermoelectrics due to the certain appealing carrier and phonon transport behaviors, coupled with its cost-effectiveness, earth-abundance and environmental compatibility. To promote the application of low-cost thermoelectric devices, we synthesized n-type SnS crystals through bromine doping. Herein, we report a high in-plane power factor of ~28 μW cm^(-1)K^(-2), and attribute it to an outstanding in-plane carrier mobility in the crystal form and the large Seebeck coefficient benefitting from the low carrier concentration. The calculations of elastic properties show that the low lattice thermal conductivity in SnS is closely related to its strong anharmonicity. Combining the excellent electrical transport properties with low thermal conductivity, a final ZT of ~0.4 is attained at 300 K, projecting a conversion efficiency of ~5% at 873 K along the in-plane direction.