In order to prevent BaMgAl10O17∶Eu （BAM） phosphor from thermal degradation, MgF2-coatings on the surface of BAM were prepared by a sol-gel process. The coatings were characterized by X-ray photoelectron spectroscop...In order to prevent BaMgAl10O17∶Eu （BAM） phosphor from thermal degradation, MgF2-coatings on the surface of BAM were prepared by a sol-gel process. The coatings were characterized by X-ray photoelectron spectroscopy and scanning electron microscopy. The results indicate that BAM is successfully coated with homogenous, close MgF2 coatings. The photoluminescence and anti-thermal degradation properties of coated BAM were investigated under 254 and 147 nm excitations. The optimum anti-thermal degradation properties are obtained at the mass ratio of MgF2 to BAM 0.2% under 254 nm excitation and 0.5% under 147 nm excitation, respectively. It is considered that trace MgO formed after baked would cause different optimum coating thicknesses under 254 and 147 nm excitations.展开更多
In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Co...In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Compared with the conventional configuration, the electric field under the gate along the Si-SiO2 interface in the presented N-LDMOS can be greatly reduced, which favors reducing the hot-carrier degradation. The step gate oxide can be achieved by double gate oxide growth, which is commonly used in some smart power ICs. The differences in hot-carrier degradations between the novel structure and the conventional structure are investigated and analyzed by 2D technology computer-aided design（TCAD）numerical simulations, and the optimal length of the thick gate oxide part in the novel N-LDMOS device can also be acquired on the basis of maintaining the characteristic parameters of the conventional device. Finally, the practical degradation measurements of some characteristic parameters can also be carried out. It is found that the hot-carrier degradation of the novel N-LDMOS device can be improved greatly.展开更多
文摘研究了最大栅电流应力 (即 p MOSFET最坏退化情况 )下 p MOSFET栅电流的退化特性 .实验发现 ,在最大栅电流应力下 ,p MOSFET栅电流随应力时间会发生很大下降 ,而且在应力初期和应力末期栅电流的下降规律均会偏离公认的指数规律 .给出了所有这些现象的详细物理解释 ,并在此基础上提出了一种新的用于 p
基金Project(50272026) supported by the NSFC Project(2003AA324020) supported by the Hi tech Research and Develop ment Program of China
文摘In order to prevent BaMgAl10O17∶Eu （BAM） phosphor from thermal degradation, MgF2-coatings on the surface of BAM were prepared by a sol-gel process. The coatings were characterized by X-ray photoelectron spectroscopy and scanning electron microscopy. The results indicate that BAM is successfully coated with homogenous, close MgF2 coatings. The photoluminescence and anti-thermal degradation properties of coated BAM were investigated under 254 and 147 nm excitations. The optimum anti-thermal degradation properties are obtained at the mass ratio of MgF2 to BAM 0.2% under 254 nm excitation and 0.5% under 147 nm excitation, respectively. It is considered that trace MgO formed after baked would cause different optimum coating thicknesses under 254 and 147 nm excitations.
基金The Natural Science Foundation of Jiangsu Province(No.BK2008287)the Preresearch Project of the National Natural Science Foundation of Southeast University(No.XJ2008312)
文摘In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Compared with the conventional configuration, the electric field under the gate along the Si-SiO2 interface in the presented N-LDMOS can be greatly reduced, which favors reducing the hot-carrier degradation. The step gate oxide can be achieved by double gate oxide growth, which is commonly used in some smart power ICs. The differences in hot-carrier degradations between the novel structure and the conventional structure are investigated and analyzed by 2D technology computer-aided design（TCAD）numerical simulations, and the optimal length of the thick gate oxide part in the novel N-LDMOS device can also be acquired on the basis of maintaining the characteristic parameters of the conventional device. Finally, the practical degradation measurements of some characteristic parameters can also be carried out. It is found that the hot-carrier degradation of the novel N-LDMOS device can be improved greatly.
