Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array ,in which the area of unit ceil was 25μm × 25μm, was studied. The profi...Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array ,in which the area of unit ceil was 25μm × 25μm, was studied. The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time. The dependence of etching rate on NH4Cl solution concentration was also studied. The photoresponsivity of the array＇s unit cells was measured. The UV-to- visible rejection ratio was around 60 ： 1.展开更多
文摘Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array ,in which the area of unit ceil was 25μm × 25μm, was studied. The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time. The dependence of etching rate on NH4Cl solution concentration was also studied. The photoresponsivity of the array＇s unit cells was measured. The UV-to- visible rejection ratio was around 60 ： 1.
