InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-D...InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.展开更多
Peter Burke once said, using images as historical evidence could not only stand as proof of political events, economic trend, and social structure, but also as an illustration of the history of daily life, material cu...Peter Burke once said, using images as historical evidence could not only stand as proof of political events, economic trend, and social structure, but also as an illustration of the history of daily life, material culture, mental state, and physical body. Photography is the extension of human vision, the appearance of which has changed the way in which people see the world, molded the subject identity of modernity, and participated in the social construction of visual modernity. To witness the history is not the only purpose of studying on photograph-based pictorials in the republican period, for which it is more important to provide visual reference for the construction of China＇s modernization, and to witness the multiplicity, mobility, and inner-diversity of modernity.展开更多
基金Project(Z132012A001)supported by the Technical Basis Research Program in Science and Industry Bureau of ChinaProject(61201028,60876009)supported by the National Natural Science Foundation of China
文摘InGaAs high electron mobility transistors （HEMTs） on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition （MOCVD）. Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm^2/V-s with sheet carrier densities larger than 4.6× 10^12 cm^ 2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/ram. Excellent depletion-mode operation, with a threshold voltage of-0.3 V and IDss of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10^-8 Ω/cm^2, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency （fT） and the maximum oscillation frequency （fmax） are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.
文摘Peter Burke once said, using images as historical evidence could not only stand as proof of political events, economic trend, and social structure, but also as an illustration of the history of daily life, material culture, mental state, and physical body. Photography is the extension of human vision, the appearance of which has changed the way in which people see the world, molded the subject identity of modernity, and participated in the social construction of visual modernity. To witness the history is not the only purpose of studying on photograph-based pictorials in the republican period, for which it is more important to provide visual reference for the construction of China＇s modernization, and to witness the multiplicity, mobility, and inner-diversity of modernity.
