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EHD强化相变换热同轴圆柱特征电极的理论分析 被引量:3
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作者 万金庆 李瑞阳 +2 位作者 郁鸿凌 董伟 黄烜 《化工学报》 EI CAS CSCD 北大核心 2006年第3期498-502,共5页
针对施加直流高压电场的电水动力学(EHD)强化管外沸腾换热和EHD强化管内凝结换热两种换热方式,提出了3个同轴圆柱特征电极参数,分别与最小场强电极、最小电场力电极、最小能耗电极对应.分析了3个电极参数的几何特性,结果表明,电极直径... 针对施加直流高压电场的电水动力学(EHD)强化管外沸腾换热和EHD强化管内凝结换热两种换热方式,提出了3个同轴圆柱特征电极参数,分别与最小场强电极、最小电场力电极、最小能耗电极对应.分析了3个电极参数的几何特性,结果表明,电极直径的大小,在EHD强化相变换热中起重要作用. 展开更多
关键词 特征电极 理论分析 强化换热 EHD(电水动力学)
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铝合金电阻点焊电极寿命及其表面特征分析 被引量:5
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作者 冀春涛 罗贤星 《材料科学与工艺》 EI CAS CSCD 北大核心 2005年第5期488-491,共4页
为了研究采用不同焊接电源时,铝合金电阻点焊的电极寿命、电极头磨损行为及其对焊接质量的影响,运用图形分析方法对电极头磨损行为进行了定量分析.基于对电极压印的分析,定义了3种电极头表面特征参数:相对半径(Rr)、边缘聚集度(EC)和偏... 为了研究采用不同焊接电源时,铝合金电阻点焊的电极寿命、电极头磨损行为及其对焊接质量的影响,运用图形分析方法对电极头磨损行为进行了定量分析.基于对电极压印的分析,定义了3种电极头表面特征参数:相对半径(Rr)、边缘聚集度(EC)和偏心度(ECC).研究表明:铝合金电阻点焊采用逆变直流电源与交流电源比较,前者电极寿命约为后者的1/4;焊点的剪切强度随着Rr和EC的增加而下降;电极头中部残存接触区的存在有助于维持较好的焊接质量. 展开更多
关键词 电阻点焊 铝合金 电极寿命 图形分析 电极头表面特征
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电火花成形加工工具电极损耗预测 被引量:5
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作者 杨玉玄 康小明 +1 位作者 梁为 赵万生 《电加工与模具》 2017年第3期16-20,共5页
电火花成形加工过程中,极间放电在蚀除工件材料的同时,也会对工具电极带来一定程度的损耗,进而影响工件的尺寸及形状精度,降低加工效率。目前普遍采用更换电极重复加工的方式来获得最终形面,需要消耗大量的工具电极和工时。针对电火花... 电火花成形加工过程中,极间放电在蚀除工件材料的同时,也会对工具电极带来一定程度的损耗,进而影响工件的尺寸及形状精度,降低加工效率。目前普遍采用更换电极重复加工的方式来获得最终形面,需要消耗大量的工具电极和工时。针对电火花加工的工具电极损耗展开了研究,通过系统地分析所得电极形面特征及进给方向与损耗量之间的关系,建立了实用的电极损耗预测模型。通过实验证明了该模型能准确预测工具电极形面损耗,为电火花加工的电极损耗预测提供了有效方法。 展开更多
关键词 电火花加工 电极损耗预测 电极形面特征 进给路径
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脉冲电压老炼过程中真空击穿机制演化机理 被引量:1
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作者 李世民 江希茜 +3 位作者 李镇廷 杜昭启 杨威 张潮海 《高电压技术》 EI CAS CSCD 北大核心 2023年第11期4790-4797,共8页
脉冲电压老炼是提高真空电极间隙击穿特性的有效方法。该文采用64/700μs冲击电压对纯铜球电极进行脉冲电压老炼试验,利用X射线光子能谱表面分析、阴极表面粗糙度及扫描电子显微镜测量,结合Fowler-Nordheim理论,分析诊断了脉冲电压老炼... 脉冲电压老炼是提高真空电极间隙击穿特性的有效方法。该文采用64/700μs冲击电压对纯铜球电极进行脉冲电压老炼试验,利用X射线光子能谱表面分析、阴极表面粗糙度及扫描电子显微镜测量,结合Fowler-Nordheim理论,分析诊断了脉冲电压老炼过程中真空击穿波形的击穿机制,并揭示真空击穿机制的演化机理。结果表明:阴极表面X射线能谱Cu峰变化对比,表面粗糙度及其突起结构和微观金属微粒分别支撑验证了老炼过程中击穿波形包含脉冲电流诱发真空击穿,场致发射诱发真空击穿和微粒诱发真空击穿3种击穿机制。脉冲电压老炼过程中存在不同真空击穿机制的演化过程,具体为:老炼起始阶段的击穿机制主要为脉冲电流诱发真空击穿和微粒诱发真空击穿;随后老炼过程由微粒诱发真空击穿主导,脉冲电流诱发真空击穿消失,场致发射诱发真空击穿逐渐增多;最终,老炼饱和阶段由场致发射诱发真空击穿与微粒诱发真空击穿共同主导。该试验结果为从击穿机制演化机理角度提升真空电极间隙击穿特性提供重要理论参考。 展开更多
关键词 真空断路器 脉冲电压老炼 击穿机制 电压电流波形 电极表面物理特征 演化机理
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A novel shapelet transformation method for classification of multivariate time series with dynamic discriminative subsequence and application in anode current signals 被引量:3
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作者 WAN Xiao-xue CHEN Xiao-fang +2 位作者 GUI Wei-hua YUE Wei-chao XIE Yong-fang 《Journal of Central South University》 SCIE EI CAS CSCD 2020年第1期114-131,共18页
Classification of multi-dimension time series(MTS) plays an important role in knowledge discovery of time series. Many methods for MTS classification have been presented. However, most of these methods did not conside... Classification of multi-dimension time series(MTS) plays an important role in knowledge discovery of time series. Many methods for MTS classification have been presented. However, most of these methods did not consider the kind of MTS whose discriminative subsequence was not restricted to one dimension and dynamic. In order to solve the above problem, a method to extract new features with extended shapelet transformation is proposed in this study. First, key features is extracted to replace k shapelets to calculate distance, which are extracted from candidate shapelets with one class for all dimensions. Second, feature of similarity numbers as a new feature is proposed to enhance the reliability of classification. Third, because of the time-consuming searching and clustering of shapelets, distance matrix is used to reduce the computing complexity. Experiments are carried out on public dataset and the results illustrate the effectiveness of the proposed method. Moreover, anode current signals(ACS) in the aluminum reduction cell are the aforementioned MTS, and the proposed method is successfully applied to the classification of ACS. 展开更多
关键词 anode current signals key features distance matrix feature of similarity numbers shapelet transformation
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Correlation between Interfacial Oxides and Electrical Characteristics of GaN Schottky Diodes
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作者 YU Zhi-wei ZHOU Wei +3 位作者 ZOU Ze-ya LUO Qian DU Jiang-feng XIA Jian-xin 《Semiconductor Photonics and Technology》 CAS 2008年第4期240-243,共4页
The electrical characteristics of GaN schottky diode with and without the interracial oxides are compared in this paper. The influence of interracial oxides on the electrical characteristics of the schottky diodes has... The electrical characteristics of GaN schottky diode with and without the interracial oxides are compared in this paper. The influence of interracial oxides on the electrical characteristics of the schottky diodes has been confirmed by the I-V, C-V measures. We find the barrier height have a reduction of 0.05 eV- 0.1 eV. There is an interracial insulating oxide with the thickness of 0. 05 nm- 0. 1 nm after conventional cleaning. Either the forward or the backward currents increase. The backward punch through voltages are reduced to 50% and the capacitances have increased by 100%. 展开更多
关键词 interracial oxides barrier height I-V C-V
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Clinical Detection and Feature Analysis on Neuro Signals
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作者 张晓文 杨煜普 +5 位作者 许晓鸣 胡天培 高忠华 张键 陈中伟 陈统一 《Journal of Shanghai Jiaotong university(Science)》 EI 2004年第4期68-72,共5页
Research on neuro signals is challenging and significative in modern natural science. By clinical experiment, signals from three main nerves (median nerve, radial nerve and ulnar nerve) are successfully detected and r... Research on neuro signals is challenging and significative in modern natural science. By clinical experiment, signals from three main nerves (median nerve, radial nerve and ulnar nerve) are successfully detected and recorded without any infection. Further analysis on their features under different movements, their mechanics and correlations in dominating actions are also performed. The original discovery and first-hand materials make it possible for developing practical neuro-prosthesis. 展开更多
关键词 neuro-information microelectrode detection wavelet analysis
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Noise Temperature Characteristics and Gain-control of Avalanche Photodiodes for Laser Radar
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作者 CAI Xi-ping SHANG Hong-Bo BAI Ji-yuan YANG Shuang WANG Li-na 《Semiconductor Photonics and Technology》 CAS 2008年第4期268-273,共6页
Avalanche photodiodes(APDs) are promising light sensors with high quantum efficiency and low noise. It has been extensively used in radiation detection,laser radar and other weak signal detection fields. Unlike other ... Avalanche photodiodes(APDs) are promising light sensors with high quantum efficiency and low noise. It has been extensively used in radiation detection,laser radar and other weak signal detection fields. Unlike other photodiodes,APD is a very sensitive light detector with very high internal gain. The basic theory shows that the gain of APD is related to the temperature. The internal gain fluctuates with the variation of temperature. Investigated was the influence of the variation of the gain induced by the fluctuation of temperature on the output from APD for a very weak laser pulse input in laser radar. An active reverse-biased voltage compensation method is used to stabilize the gain of APD. An APD model is setup to simulate the detection of light pulse signal. The avalanche process,various noises and temperature's effect are all included in the model. Our results show that for the detection of weak light signal such as in laser radar,even a very small fluctuation of temperature could cause a great effect on APD's gain. The results show that the signal-to-noise ratio of the APD's output could be improved effectively with the active gain-control system. 展开更多
关键词 avalanche photodiode noise characteristics gain-control laser radar
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Electrical Characterization of Semiconductor Diode Using Alternating Signal Measurements at Forward Bias
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作者 赵锋 沈君 +2 位作者 朱传云 李乐 王存达 《Transactions of Tianjin University》 EI CAS 2003年第3期193-197,共5页
The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This m... The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance. 展开更多
关键词 semiconductor diode forward electrical characterization negative capacitance interfacial layer GAN
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Characterization of Photovoltaic Modules under Arid Environments
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作者 Abubaker Younis Esam Elsarrag +1 位作者 Yousef Alhorr Mahmoud Onsa 《Journal of Energy and Power Engineering》 2018年第1期44-56,共13页
Performance characteristics data of solar photovoltaic (PV) cell/module are conventionally obtained under standard testing conditions. In the present work, the performance of PV modules under extreme temperatures an... Performance characteristics data of solar photovoltaic (PV) cell/module are conventionally obtained under standard testing conditions. In the present work, the performance of PV modules under extreme temperatures and insolations experienced in State of Qatar was utilized to aid presenting a simplified characterization approach for the special case of arid environmental conditions. The chosen model was the well-known single diode model with both series and parallel resistors for greater accuracy. The modeling technique was validated by comparing the numerically calculated electrical characteristics with experimentally obtained data using two approaches: a single indoor fixed monocrystalline PV module inside a solar simulation chamber which physically simulated different weather scenarios by changing irradiation intensities and temperature, and a set of outdoor fixed polycrystalline PV modules. The result of the indoor experiment was presented in form of performance curves, and the outdoor experiment results in a monthly accumulated power production chart format. Both illustration types showed acceptable tolerance. 展开更多
关键词 Photovoltaics electrical characterization mathematical modeling.
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Characterization of alternating current impedance properties of biomedical electrodes
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作者 周伟 程德才 +3 位作者 宋嵘 张春健 许文平 潘晓玲 《Journal of Central South University》 SCIE EI CAS 2013年第5期1254-1258,共5页
To study the alternating current (AC) impedance properties of Ag/AgC1 electrocardiograph (ECG) electrodes, the electrode pair was gel-to-gel connected, and then the electrical potential was recorded after a safe s... To study the alternating current (AC) impedance properties of Ag/AgC1 electrocardiograph (ECG) electrodes, the electrode pair was gel-to-gel connected, and then the electrical potential was recorded after a safe stimulating current passes through the electrode pair, so the AC impedance data of ECG electrodes were obtained. Varying the frequency and value of stimulating current, the detailed comparison and analysis of AC impedance properties of the electrodes were performed, and the stability was further characterized by using the continuous measurement within 24 h. The experimental results show that the AC impedance values of electrodes decreased, and then slightly increased with the increase of frequency of stimulating current. The minimum AC impedance value was obtained when the frequency was changed to 10 kHz. When the stimulating current increased, the AC impedance values of electrodes showed a slight decrease, but did not change significantly. Besides, the continuous measurement results show that the impedance value presented a significant increase in the initial 30 min, and then was stabilized in the following measuring process. 展开更多
关键词 bioelectrical impedance electrocardiograph electrodes alternating current impedance frequency properties currentproperties
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New dark current component of InGaAs/InP HPDs confirmed by DLTS
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作者 WANGKaiyuan XUWeihong 《Semiconductor Photonics and Technology》 CAS 1995年第1期20-23,共4页
The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure... The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of O.44 eV, level concentration of 3.10×10 ̄(13)cm ̄(-3) and electronic capture cross section of 1.72×10 ̄(12)cm ̄2 has been found.It's existence results in the new tunnelling current. 展开更多
关键词 Photodiodes Characteristic Measurement Dark Current Tunnelling Current
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