The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelect...The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy (XPS).The results indicate that, in PTCDA molecule,the binding energy ( E b) of C is 284.6 eV and 288.3 eV, corresponding to C of the perylene and C of the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1 eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively. Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.展开更多
The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq...The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.展开更多
The frequency dependent of the forward and reverse bias capacitance-voltage(C-V) and conductance-voltage(G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and volta...The frequency dependent of the forward and reverse bias capacitance-voltage(C-V) and conductance-voltage(G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of 5-5 V at room temperature.The effects of surface states(Nss) and series resistance(Rs) on C-V and G/w-V characteristics have been investigated in detail.The frequency dependent N ss and R s profiles were obtained for various applied bias voltages.The experimental results show that the main electrical parameters of Au/p-InP SBD such as barrier height(ΦB),the density of acceptor concentration(NA),N ss and R s were found strongly frequency and voltage dependent.The values of C and G/w decrease with increasing frequency due to a continuous distribution of N ss localized at the metal/semiconductor(M/S) interface.The effect of R s on C and G is found considerably high especially at high frequencies.Therefore,the high frequencies of the values of C and G were corrected for the effect of R s in the whole measured bias range to obtain the real diode capacitance C c and conductance G c using the Nicollian and Goetzberger technique.The distribution profile of R s-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of N ss at the M/S interface.展开更多
文摘The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy (XPS).The results indicate that, in PTCDA molecule,the binding energy ( E b) of C is 284.6 eV and 288.3 eV, corresponding to C of the perylene and C of the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1 eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively. Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.
文摘The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.
基金supported by the Scientific and Technological Research Council of Turkey (TUBITAK)
文摘The frequency dependent of the forward and reverse bias capacitance-voltage(C-V) and conductance-voltage(G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of 5-5 V at room temperature.The effects of surface states(Nss) and series resistance(Rs) on C-V and G/w-V characteristics have been investigated in detail.The frequency dependent N ss and R s profiles were obtained for various applied bias voltages.The experimental results show that the main electrical parameters of Au/p-InP SBD such as barrier height(ΦB),the density of acceptor concentration(NA),N ss and R s were found strongly frequency and voltage dependent.The values of C and G/w decrease with increasing frequency due to a continuous distribution of N ss localized at the metal/semiconductor(M/S) interface.The effect of R s on C and G is found considerably high especially at high frequencies.Therefore,the high frequencies of the values of C and G were corrected for the effect of R s in the whole measured bias range to obtain the real diode capacitance C c and conductance G c using the Nicollian and Goetzberger technique.The distribution profile of R s-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of N ss at the M/S interface.
