ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide...ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide （KOH） solution. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and current-voltage （I-V） curve were used to characterize the structure, morphologies and optoelectronic properties. The results demonstrated that ZnO NRs had wurtzite structures, the morphologies and photovoltaic properties of ZnO NRs were closely related to the concentration of KOH and etching time, well-aligned and uniformly distributed ZnO NRs were obtained after etching with 0.1 mol/L KOH for 1 h. ZnO NRs treated by KOH had been proved to have superior photovoltaic properties compared with high density ZnO NRs. When using ZnO NRs etched with 0.1 mol/L KOH for 1 h as the anode of solar cell, the conversion efficiency, short circuit current and open circuit voltage, compared with the unetched ZnO NRs, increased by 0.71%, 2.79 mA and 0.03 V, respectively.展开更多
This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass （SOG） structures in t...This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass （SOG） structures in the deep reactive ion etching （DRIE） process. Experiments with gap heights of 5,20, and 50μm were carried out for performance comparison of the footing effect. Also,two kinds of silicon wafers with resistivity of 2-4 and 0.01-0. 0312Ω· cm were used for the exploration. The results show that structures with resistivity of 0.01 - 0. 0312Ω· cm have better topography than those with resistivity of 2-4Ω· cm; and structures with 50μm-high gaps between silicon structures and glass substrate suffer some- what less of a footing effect than those with 20μm-high gaps,and much less than those with Stem-high gaps. Our theoretical analysis indicates that either the higher conductivity of the silicon wafer or a larger gap height between silicon structures and glass substrate can suppress footing effects. The results can contribute to the choice of silicon type and optimum design for many microsensors.展开更多
By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The res...By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The results show that gas-water distribution styles are divided into continuous phase type and separate phase type. The water lock exists in pore and throat during the process of gas-water displacement, and it reduces the gas flow-rate and has some effects on the recovery efficiency during the operation of gas storage. According to the experimental results of aquifer gas storage in X area, the differences in available extent among reservoirs are significant, and the availability of pore space is 33% 45%.展开更多
Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness d...Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputter-etching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate. The Raman peaks at 99 cm-1, 438 cm-1 and 589 cm-1 are identified as E2(low), E2(high) and E1(LO) modes, respectively, and the position of E1(LO) peak blue shifts at longer sputter-etching time. The transmittances of the films, which are deposited on the substrate and etched for 10 min and 20 min, are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min. The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.展开更多
This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar s...This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar streams, and the etchant is located at the site where the reaction is supposed to occur. This new micro fabrication process can be used for the high aspect ratio etching inside a microchannel on glass substrates. Furthermore, the topography of microstructure patterned by this method can be controlled by changing the flow parameters of the separator and etchant. Experiments on the effects of flow parameters on the aspect ratio, side wall profile and etching rate were carried out on a glass substrate. The effect of flow rates on the etching rate and the micro topography was analyzed. In addition, experiments with dynamical changes of the flow rate ratio of the separator and etchant showed that the verticality of the side walls of microstructures can be significantly improved. The restricted flowing etching technique not only abates the isotropic effect in the traditional wet etching but also significantly reduces the dependence on expensive photolithographic equipment.展开更多
基金Project (21171027) supported by the National Natural Science Foundation of ChinaProject (K1001020-11) supported by the Science and Technology Key Project of Changsha City, ChinaProject ([2010]70) supported by Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China
文摘ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide （KOH） solution. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and current-voltage （I-V） curve were used to characterize the structure, morphologies and optoelectronic properties. The results demonstrated that ZnO NRs had wurtzite structures, the morphologies and photovoltaic properties of ZnO NRs were closely related to the concentration of KOH and etching time, well-aligned and uniformly distributed ZnO NRs were obtained after etching with 0.1 mol/L KOH for 1 h. ZnO NRs treated by KOH had been proved to have superior photovoltaic properties compared with high density ZnO NRs. When using ZnO NRs etched with 0.1 mol/L KOH for 1 h as the anode of solar cell, the conversion efficiency, short circuit current and open circuit voltage, compared with the unetched ZnO NRs, increased by 0.71%, 2.79 mA and 0.03 V, respectively.
文摘This paper experimentally studies the effects of the conductivity of a silicon wafer and the gap height between silicon structures and glass substrate on the footing effect for silicon on glass （SOG） structures in the deep reactive ion etching （DRIE） process. Experiments with gap heights of 5,20, and 50μm were carried out for performance comparison of the footing effect. Also,two kinds of silicon wafers with resistivity of 2-4 and 0.01-0. 0312Ω· cm were used for the exploration. The results show that structures with resistivity of 0.01 - 0. 0312Ω· cm have better topography than those with resistivity of 2-4Ω· cm; and structures with 50μm-high gaps between silicon structures and glass substrate suffer some- what less of a footing effect than those with 20μm-high gaps,and much less than those with Stem-high gaps. Our theoretical analysis indicates that either the higher conductivity of the silicon wafer or a larger gap height between silicon structures and glass substrate can suppress footing effects. The results can contribute to the choice of silicon type and optimum design for many microsensors.
基金Project(2011ZX05013-002)supported by National Science and Technology Major Projects of China
文摘By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The results show that gas-water distribution styles are divided into continuous phase type and separate phase type. The water lock exists in pore and throat during the process of gas-water displacement, and it reduces the gas flow-rate and has some effects on the recovery efficiency during the operation of gas storage. According to the experimental results of aquifer gas storage in X area, the differences in available extent among reservoirs are significant, and the availability of pore space is 33% 45%.
基金supported by the National Natural Science Foundation of China (No.50972105)the National High Technology Research and Development Program of China (No.2009AA03Z444)the Key Supporting Plan Program of Tianjin (No.10ZCKFGX01200)
文摘Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputter-etching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate. The Raman peaks at 99 cm-1, 438 cm-1 and 589 cm-1 are identified as E2(low), E2(high) and E1(LO) modes, respectively, and the position of E1(LO) peak blue shifts at longer sputter-etching time. The transmittances of the films, which are deposited on the substrate and etched for 10 min and 20 min, are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min. The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.
基金Project (No. 50705081) supported by the National Natural Science Foundation of China
文摘This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar streams, and the etchant is located at the site where the reaction is supposed to occur. This new micro fabrication process can be used for the high aspect ratio etching inside a microchannel on glass substrates. Furthermore, the topography of microstructure patterned by this method can be controlled by changing the flow parameters of the separator and etchant. Experiments on the effects of flow parameters on the aspect ratio, side wall profile and etching rate were carried out on a glass substrate. The effect of flow rates on the etching rate and the micro topography was analyzed. In addition, experiments with dynamical changes of the flow rate ratio of the separator and etchant showed that the verticality of the side walls of microstructures can be significantly improved. The restricted flowing etching technique not only abates the isotropic effect in the traditional wet etching but also significantly reduces the dependence on expensive photolithographic equipment.
