Based on the microscopic phase-field model, the correlation between site occupation evolution of alloying elements in Ni3V-DO22 phase and growth of Ni3Al-L12 phase was studied during the phase transformation of Ni75Al...Based on the microscopic phase-field model, the correlation between site occupation evolution of alloying elements in Ni3V-DO22 phase and growth of Ni3Al-L12 phase was studied during the phase transformation of Ni75Al4.2V20.8. The results demonstrate that the growth of L12 phase can be divided into two stages： at the early stage, the composition of alloying elements in DO22 phase almost remains unchanged; at the late stage, the compositions of Ni and Al decrease while V increases in DO22 phase. Part of alloying elements for L12 phase growth are supplied from the site occupation evolution of alloying elements on three kinds of sublattices in DO22 phase. Ni is mainly supplied from V sublattice, and part of Al is supplied from NiⅠ and V sites at the centre of DO22 phase. The excessive V from the decreasing DO22 phase migrates into the centre of DO22 phase and mainly occupies V and NiII sites. It is the site occupation evolution of antisite atoms and ternary additions in DO22 phase that controls the growth rate of L12 phase at the late stage.展开更多
Correlation between site occupation evolution of alloying elements in L12 phase and growth of DO22 phase in Ni75Al7.5V17.5 was studied using microscopic phase field model. The results demonstrate that the growing proc...Correlation between site occupation evolution of alloying elements in L12 phase and growth of DO22 phase in Ni75Al7.5V17.5 was studied using microscopic phase field model. The results demonstrate that the growing process of DO22 phase can be divided into two stages. At the early stage, composition in the centre part of L12 phase almost remains unchanged, and the nucleation and growth of DO22 phase is controlled by the decrease of interface between L12 phases. At the late stage, part of V for growth of DO22 phase is supplied from the centre part of L12 phase and mainly comes from Al sublattice, the excess Ni spared from the decreasing L12 phase migrates into the centre part of L12 phase and occupies the Ni sublattices exclusively, while the excess Al mainly occupies the Al sublattice. At the late stage, the growth of DO22 phase is controlled by the evolution of antisite atoms and ternary additions in the centre part of L12 phase.展开更多
Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydrid...Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes.展开更多
基金Projects(51174168,51274167)supported by the National Natural Science Foundation of ChinaProject(2013M532082)supported by Postdoctoral Science Foundation of ChinaProjects(13R21421700,13R21421800)supported by the Postdoctoral Science Foundation of Shanghai,China
文摘Based on the microscopic phase-field model, the correlation between site occupation evolution of alloying elements in Ni3V-DO22 phase and growth of Ni3Al-L12 phase was studied during the phase transformation of Ni75Al4.2V20.8. The results demonstrate that the growth of L12 phase can be divided into two stages： at the early stage, the composition of alloying elements in DO22 phase almost remains unchanged; at the late stage, the compositions of Ni and Al decrease while V increases in DO22 phase. Part of alloying elements for L12 phase growth are supplied from the site occupation evolution of alloying elements on three kinds of sublattices in DO22 phase. Ni is mainly supplied from V sublattice, and part of Al is supplied from NiⅠ and V sites at the centre of DO22 phase. The excessive V from the decreasing DO22 phase migrates into the centre of DO22 phase and mainly occupies V and NiII sites. It is the site occupation evolution of antisite atoms and ternary additions in DO22 phase that controls the growth rate of L12 phase at the late stage.
基金Projects (50941020, 10902086, 50875217, 20903075) supported by the National Natural Science Foundation of ChinaProjects (SJ08-ZT05, SJ08-B14) supported by the Natural Science Foundation of Shaanxi Province, China
文摘Correlation between site occupation evolution of alloying elements in L12 phase and growth of DO22 phase in Ni75Al7.5V17.5 was studied using microscopic phase field model. The results demonstrate that the growing process of DO22 phase can be divided into two stages. At the early stage, composition in the centre part of L12 phase almost remains unchanged, and the nucleation and growth of DO22 phase is controlled by the decrease of interface between L12 phases. At the late stage, part of V for growth of DO22 phase is supplied from the centre part of L12 phase and mainly comes from Al sublattice, the excess Ni spared from the decreasing L12 phase migrates into the centre part of L12 phase and occupies the Ni sublattices exclusively, while the excess Al mainly occupies the Al sublattice. At the late stage, the growth of DO22 phase is controlled by the evolution of antisite atoms and ternary additions in the centre part of L12 phase.
文摘Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes.
