The dielectric permittivities(ε′ & ε″) and dielectric loss tangent(tan) are studied for the prepared samples CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 spinel ferrites with(0.0 ≤ x ≤ 0.5) from room temperature up to 7...The dielectric permittivities(ε′ & ε″) and dielectric loss tangent(tan) are studied for the prepared samples CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 spinel ferrites with(0.0 ≤ x ≤ 0.5) from room temperature up to 700K in the frequency range(102~105Hz).Dielectric anomaly at the transition temperature Tc is pronounced in the relations of dielectric permittivitties with temperature where,the obtained Tc is found to decrease linearly with increasing Zn concentration.The relation of tan with frequency at different temperatures shows relaxation spectra where the relaxation time and the maximum frequency of the hopping conduction mechanism are determined.The variation of(ε′,ε″ and tanδ) with frequency and temperature displays a strong dependence on both gallium and zinc concentrations.The results are explained in light of the cation-anion-cation and cation-cation interactions over the octahedral sites in the spinel structure.展开更多
Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current...Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.展开更多
By using a first-principles approach, we investigate the pathway of electric displacement fields in shaped graded dielectric materials existing in the form of cloaks with various shapes. We reveal a type of apparently...By using a first-principles approach, we investigate the pathway of electric displacement fields in shaped graded dielectric materials existing in the form of cloaks with various shapes. We reveal a type of apparently negative electric polarization （ANEP）, which is due to a symmetric oscillation of the paired electric permittivities, satisfying a sum rule. The ANEP does not occur for a spherical cloak, but appears up to maximum as a/b （the ratio between the long and short principal axis of the spheroidal cloak） is about 5/2, and eventually disappears as a/b becomes large enough corresponding to a rod-like shape. Further, the cloaking efficiency is calculated for different geometrical shapes and demonstrated to closely relate to the ANEP. The possibility of experiments is discussed. This work has relevance to dielectric shielding based on shaped graded dielectric materials.展开更多
HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric const...HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.展开更多
文摘The dielectric permittivities(ε′ & ε″) and dielectric loss tangent(tan) are studied for the prepared samples CuFe2O4 and Cu1-xZnxGa0.1Fe1.9O4 spinel ferrites with(0.0 ≤ x ≤ 0.5) from room temperature up to 700K in the frequency range(102~105Hz).Dielectric anomaly at the transition temperature Tc is pronounced in the relations of dielectric permittivitties with temperature where,the obtained Tc is found to decrease linearly with increasing Zn concentration.The relation of tan with frequency at different temperatures shows relaxation spectra where the relaxation time and the maximum frequency of the hopping conduction mechanism are determined.The variation of(ε′,ε″ and tanδ) with frequency and temperature displays a strong dependence on both gallium and zinc concentrations.The results are explained in light of the cation-anion-cation and cation-cation interactions over the octahedral sites in the spinel structure.
基金supported by the National Natural Science Foundation of China (11304161, 11104148, and 51171082)the Tianjin Natural Science Foundation (13JCYBJC41100 and 14JCZDJC37700)+3 种基金the National Basic Research Program of China (973 Program) (2014CB931703)Specialized Research Fund for the Doctoral Program of Higher Education (20110031110034)the Fundamental Research Funds for the Central Universitiessupported by the Global Frontier Center for Multiscale Energy Systems at Seoul National University in Korea
文摘Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.
基金Supported by the National Natural Science Foundation of China under Grant Nos. 10604014 and 10874025the Shanghai Education Committee and the Shanghai Education Development Foundation ("Shu Guang" Project under Grant No. 05SG01)+1 种基金the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, ChinaChinese National Key Basic Research Special Fund under Grant No. 2006CB921706
文摘By using a first-principles approach, we investigate the pathway of electric displacement fields in shaped graded dielectric materials existing in the form of cloaks with various shapes. We reveal a type of apparently negative electric polarization （ANEP）, which is due to a symmetric oscillation of the paired electric permittivities, satisfying a sum rule. The ANEP does not occur for a spherical cloak, but appears up to maximum as a/b （the ratio between the long and short principal axis of the spheroidal cloak） is about 5/2, and eventually disappears as a/b becomes large enough corresponding to a rod-like shape. Further, the cloaking efficiency is calculated for different geometrical shapes and demonstrated to closely relate to the ANEP. The possibility of experiments is discussed. This work has relevance to dielectric shielding based on shaped graded dielectric materials.
基金supported by the National Natural Science Foundation of China (Grant No. 61006008)the National Defense Advance Research Project (Grant No. 513080301)the Key Specific Project in the National Sciences and Technology Program (Grant No. KJ080112501)
文摘HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.
