Aim To study the dIelectric breakdown phenomenon in the materials with quenched disorder. Methods Renormolization group methods were used. Results The percolation limit for breakdown pc , the breakdown field Ec～(Pc-...Aim To study the dIelectric breakdown phenomenon in the materials with quenched disorder. Methods Renormolization group methods were used. Results The percolation limit for breakdown pc , the breakdown field Ec～(Pc-p)v, and the fractal dimension of the structure of dielectric breakdown df were obtained. Conclusion The breakdown properties of the materials with quenched disorder are characterized by universal power laws, where the exponents are universal.展开更多
Y98-61452-241 9916585大型电动机绕线转子用的线圈接地墙绝缘系统评估=Coil groundwall insulation system evaluation for a largemotor wound rotor application[会,英]/Emery,F.T.& Spisak,A.J.//1998 IEEE International Sympo...Y98-61452-241 9916585大型电动机绕线转子用的线圈接地墙绝缘系统评估=Coil groundwall insulation system evaluation for a largemotor wound rotor application[会,英]/Emery,F.T.& Spisak,A.J.//1998 IEEE International Symposiumon Electrical Insulation,Vol.1.—241～244(AG)Y98-61452-249展开更多
HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric const...HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.展开更多
文摘Aim To study the dIelectric breakdown phenomenon in the materials with quenched disorder. Methods Renormolization group methods were used. Results The percolation limit for breakdown pc , the breakdown field Ec～(Pc-p)v, and the fractal dimension of the structure of dielectric breakdown df were obtained. Conclusion The breakdown properties of the materials with quenched disorder are characterized by universal power laws, where the exponents are universal.
文摘Y98-61452-241 9916585大型电动机绕线转子用的线圈接地墙绝缘系统评估=Coil groundwall insulation system evaluation for a largemotor wound rotor application[会,英]/Emery,F.T.& Spisak,A.J.//1998 IEEE International Symposiumon Electrical Insulation,Vol.1.—241～244(AG)Y98-61452-249
基金supported by the National Natural Science Foundation of China (Grant No. 61006008)the National Defense Advance Research Project (Grant No. 513080301)the Key Specific Project in the National Sciences and Technology Program (Grant No. KJ080112501)
文摘HfxAl(1-x)O film grown by atomic layer deposition(ALD) on n-type 4H-SiC(0001) epitaxial layer has been studied.Measurements show that it has relatively high breakdown electric field of 16.4 MV/cm,high dielectric constant of 16.3 and low gate leakage current of 2.47×10-5 A/cm2 at E=5 MV/cm,which makes ALD HfxAl(1-x)O a great potential candidate gate dielectric for 4H-SiC MIS based transistors.
