弹性形变对手征液晶螺旋光轴及电光响应时间的影响

手征向列相液晶螺旋轴即为光轴,此轴的空间取向直接影响着液晶中光传播的特性。采用理论分析和数值模拟相结合的方法,研究了液晶展曲与弯曲形变存在的差异和对手征向列相液晶挠曲电螺旋光轴倾角及动力学响应特性的影响。假设在静电平衡及动力学响应两种状态下,系统均具有统一的挠曲电螺旋光轴,忽略介电各向异性,分别计算了两种不同状态下系统的平均自由能密度。利用欧拉方程及转矩平衡方程得到了螺旋光轴倾角满足的平衡方程及动力学方程。通过数值计算,讨论了两种形变的差异对挠曲电螺旋光轴倾角及动力学响应特性的影响。结果表明两种形变差异的存在,均使螺旋光轴扭曲角及特性响应时间变化,差异越大变化越快,这种影响是不可忽略的,这为液晶电光快速响应提供了依据。

Stable zinc oxide field emitter-based backlight unit for liquid crystal display

A zinc oxide ZnO field emitter-based backlight unit for liquid crystal display with a gated structure is fabricated by screen-printing processes.The measured anode field emission current density reaches 0.62 mA/cm2 when the applied gate voltage is 570 V.Part of the anode current is contributed by the secondary electron emission which is excited from the MgO layer inside the gate apertures on the gate plate. The average emission current density and luminance are 0.47 mA/cm2 and 1 250 cd/m2 respectively with a fluctuation of about 10% during the 1 000 min measurement.By a finite element method calculation the gated structure shows a good electron beam focusing property. The driving performance of the backlight unit is characterized by SPICE simulation tools and measured by the oscilloscope. Stable field emission line-by-line scanning and fast response characteristics of the backlight unit indicate its promising application in the liquid crystal displays.

Fabrication and properties of ultraviolet photo-detectors based on SiC nanowires

A new type of ultraviolet photo-detectors （UVPDs） based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including 1-V characteristics and time response were studied in this work. SiC nan- owires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameters of SiC nanowires varied from 100 to 200 nm while they were some centimeters long and the SiC nanowires were with zinc blended cubic form （β-SiC） tested by X-ray diffraction. A bundle of nanowires was fixed onto two legs＇ base by conductive silver paste to form the UVPDs. The electrical measurement of the device showed a significant increase of current when the device was exposed to 254 nm UV light, and the rising time of the device is very short, but the falling time is relatively long. Our results show that the UVPDs based on SiC nanowires have excellent electrical and optical properties which can be potentially applied.

UV soaking for enhancing the photocurrent and response speed of Cs_(2)AgBiBr_(6)-based all-inorganic perovskite photodetectors

The response speed of the reported Cs_(2)AgBiBr_(6)-based photodetectors exhibits a wide variation ranging from microseconds to nanoseconds,while the reason is still unclear.Apart from the conventional approaches such as reducing effective area,new regulating approaches for response speed improvement have rarely been reported.On the other hand,it is generally believed that ultraviolet(UV)light has negative impact on perovskite devices resulting in performance degradation.In this work,we demonstrated that the response speed of the photodetector with FTO/Cs_(2)AgBiBr_(6)/Au structure can be effectively regulated by utilizing UV light-soaking effect without reducing the device area.Particularly,the decay time is efficiently modulated from 30.1μs to 340 ns.In addition,the−3 dB bandwidth of the device is extended from 5 to 20 kHz.It is worth mentioning that the light current is remarkably boosted by 15 times instead of any attenuation.Furthermore,we prove the universality of UV soaking treatment on Cs_(2)AgBiBr_(6)-based photodetectors with other all-inorganic structures,i.e.,FTO/TiO_(2)/Cs_(2)AgBiBr_(6)/Au,FTO/Cs_(2)AgBiBr_(6)/TiO_(2)/Au and FTO/TiO_(2)/Cs_(2)AgBiBr_(6)/CuSCN/Au.Our results demonstrate a new method to improve the response speed and light current of Cs_(2)AgBiBr_(6)-based perovskite all-inorganic photodetectors.

Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector

The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.