A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography

A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.

Effect of KOH treatment on structural and photovoltaic properties of ZnO nanorod arrays

ZnO nanorod arrays （NRs） were synthesized on the fluorine-doped SnO2 transparent conductive glass （FTO） by a simple chemical bath deposition （CBD） method combined with alkali-etched method in potassium hydroxide （KOH） solution. X-ray diffraction （XRD）, scanning electron microscopy （SEM） and current-voltage （I-V） curve were used to characterize the structure, morphologies and optoelectronic properties. The results demonstrated that ZnO NRs had wurtzite structures, the morphologies and photovoltaic properties of ZnO NRs were closely related to the concentration of KOH and etching time, well-aligned and uniformly distributed ZnO NRs were obtained after etching with 0.1 mol/L KOH for 1 h. ZnO NRs treated by KOH had been proved to have superior photovoltaic properties compared with high density ZnO NRs. When using ZnO NRs etched with 0.1 mol/L KOH for 1 h as the anode of solar cell, the conversion efficiency, short circuit current and open circuit voltage, compared with the unetched ZnO NRs, increased by 0.71%, 2.79 mA and 0.03 V, respectively.

Chemical etching process of copper electrode for bioelectrical impedance technology

In order to obtain bioelectrical impedance electrodes with high stability, the chemical etching process was used to fabricate the copper electrode with a series of surface microstructures. By changing the etching processing parameters, some comparison experiments were performed to reveal the influence of etching time, etching temperature, etching liquid concentration, and sample sizes on the etching rate and surface microstructures of copper electrode. The result shows that the etching rate is decreased with increasing etching time, and is increased with increasing etching temperature. Moreover, it is found that the sample size has little influence on the etching rate. After choosing the reasonable etching liquid composition （formulation 3）, the copper electrode with many surface microstructures can be obtained by chemical etching process at room temperature for 20 rain. In addition, using the alternating current impedance test of electrode-electrode for 24 h, the copper electrode with a series of surface microstructures fabricated by the etching process presents a more stable impedance value compared with the electrocardiograph （ECG） electrode, resulting from the reliable surface contact of copper electrode-electrode.

Fabrication and Characteristics of a Si-Based Single Electron Transistor

Si based single electron transistor (SET) is fabricated successfully on p type SIMOX substrate,based on electron beam (EB) lithography,reactive ion etching (RIE) and thermal oxidation.In particular,using thermal oxidation and etching off the oxide layer,a one dimensional Si quantum wire can be converted into several quantum dots inside quantum wire in connection with the source and drain regions.The differential conductance (d I ds /d V ds ) oscillations and the Coulomb staircases in the source drain current ( I ds ) are shown clearly dependent on the source drain voltage at 5 3K.The I ds V gs (gate voltage) oscillations are observed from the I ds V gs characteristics as a function of V gs at different temperatures and various values of V ds .For a SET whose total capacitance is about 9 16aF,the I ds V gs oscillations can be observed at 77K.

A Novel Sub-50nm Poly-Si Gate Patterning Technology

A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-scale masking pattern for gate formation is formed according to the image transfer of an edge-defined spacer.Experimental results reveal that the resultant gate length,about 75 to 85 percent of the thickness,is determined by the thickness of the film to form the spacer.From SEM photograph,the cross-section of the poly-Si gate is seen to be an inverted-trapezoid,which is useful to reduce the gate resistance.

200nm Gate Length Metamorphic In_(0.52)Al_(0.48)As/In_(0.6)Ga_(0.4) As HEMTs on GaAs Substrates with 110GHz f_T

200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL （electron beam lithography） technology. Ti/Pt/Au is evaporated to form gate metals. A T-shaped gate is produced using a novel PMMA/PMGI/PMMA trilayer resist structure to decrease parasitic capacitance and parasitic resistance of the gate. Excellent DC and RF performances are obtained and the transconductance （gm） ,maximum saturation drain current density （Joss）, threshold voltage （ VT）, current cut-off frequency （fT） , and maximum oscillation frequency （fmax） of InAlAs/ InGaAs MHEMTs are 510mS/mm,605mA/mm, -1.8V, 110GHz, and 72GHz, respectively.

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.

Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.

Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect

We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method for preparing metal （e. g. Au or Ag） nanogaps and arrays in combination with a transfer process （e. g., deposition/lift-off）. Different from the direct gap-writing process,the nanogap precursor structures （nanoconnections） were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to -10nm by controlling the exposure dose in EBL.

怎样办好图书宣传栏

图书宣传工作在读者服务工作中占有重要的地位,图书宣传栏是宣传图书、加速图书流通的重要手段和方式。 据分析,当前,藏书大量压架的原因之一,就是图书宣传工作没有跟上去,图书宣传栏没有很好地发挥作用,致使读者长期不了解藏书的具体内容所造成。我们常常从一些社会现象中,可以了解图书宣传工作对读者的深刻影响。

Nano-Level Electron Beam Lithography

The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.

An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices

We present an all-e-beam lithography （EBL） process for the patterning of photonic crystal waveguides. The whole device structures are exposed in two steps. Holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size （less than 10nm）. With the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled. The second step is the exposure of the access waveguides at a larger step size （about 30nm） to improve the scan speed of the EBL. The influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. It is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.

Photolithography by a tunable electro-optical lithium niobate phase array

Photolithography experiments are performed by means of an optical phase mask with electrooptically tunable phase step. The phase mask consists of a 2-dimensional hexagonal lattice of inverted ferroelectric domains fabricated on a z-cut/ithium niobate substrate. The electro-optically tunable phase step, between inverted domain, is obtained by the application of an external electric field along the z axis of the crystal via transparent electrodes. The collimated beam of an argon laser passes through the phase mask and the near field intensity patterns, at different planes of the Talbot length and for different values of the applied voltage, are used for photolithographic experiments. Preliminary results are shown and further applications are discussed.

轴承产品采用奥斯汀金属产品打标技术的可行性分析

分析了一般电蚀显刻技术与奥斯汀金属产品打标技术在轴承产品上打标的原理，并对打标成本及方法进行比较论证，结论认为应用奥斯汀打标技术于轴承产品上，有助于提高产品的打标质量和防伪功能且成本较低，操作简单，在轴承行业有一定的推广价值。

ITO Etched by Photolithography Used in the Fabrication of Flexible Organic Solar Cells with PET Substrates

In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as an electron donor, PCBM （[6, 6]-phenyl C6 l-butyric acid methyl ester） as an electron acceptor and PEDOT： PSS used as a HIL （hole injection layer）. These materials were deposited by spin coating method on the flexible substrates. Photolithography method is used to etch ITO. The electrical parameters of the fabricated cells were investigated by means of J （V）, FF （fill factor）, the efficiency （r/）, photocurrent and IPCE measurement. It was observed that 45% of the absorbed photons are converted into current. The results obtained using etching technology by photolithography is better than that obtained in the clean room.

Ferromagnetic Resonance Study on the Permalloy Submicron Rectangular Arrays Prepared by Electron Beam Lithography

In this paper, we report a ferromagnetic resonance study on the permalloy film of submicron sized rectangular arrays prepared by electron beam lithography and the theoretical simulation to the non uniform demagnetizing effect and ferromagnetic resonance data. By theoretical simulation, the magnetization, gyromagnetic ratio and g value of the sample are determined. The theoretical curves of the dependence of the resonance field on the field orientation φ H fit well with the experimental data. When the steady magnetic field is applied near the film normal, a series of additional regular peaks (up to eight ) appeared in the FMR spectrum on the low field side of the main FMR peak. The resonance field of these side peaks decreases linearly with the peak number. The possible physical mechanism of these multiple peaks was discussed.

纳米压印技术在制造领域的应用

微纳米加工技术作为一种典型的先进制造技术,其制造精度可达到纳米级别,在小型甚至微型元器件、微型芯片及生物传感器的制造、批量化生产中具有不可取代的作用。纳米压印技术作为新型的光刻技术,具有成本低、分辨率高、效率高、制造流程便捷等优点。文章围绕纳米压印技术的主流方法进行介绍,对纳米热压印、紫外纳米压印、纳米电极光刻等方法的特点及原理进行了阐述,并对纳米压印技术的应用做出了总结和展望。

Effects of electron beam lithography process parameters on structure of silicon optical waveguide based on SOI

Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.