Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This ...Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.展开更多
In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as ...In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as an electron donor, PCBM （[6, 6]-phenyl C6 l-butyric acid methyl ester） as an electron acceptor and PEDOT： PSS used as a HIL （hole injection layer）. These materials were deposited by spin coating method on the flexible substrates. Photolithography method is used to etch ITO. The electrical parameters of the fabricated cells were investigated by means of J （V）, FF （fill factor）, the efficiency （r/）, photocurrent and IPCE measurement. It was observed that 45% of the absorbed photons are converted into current. The results obtained using etching technology by photolithography is better than that obtained in the clean room.展开更多
This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are in...This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are introduced, which cause that gate currents are not dominated by the thermal electron emission mechanism. N vacancies enhance the tunneling effect and reduce the Schottky barrier height as n-type doped in the etched AIGaN surface.A post-gate process for AlGaN/GaN HEMTs,annealing at 400℃ in a nitrogen ambient for 10min is introduced. After annealing, Ni atoms of gate metal reacted with Ga atoms of AlGaN, and N vacancies were reduced. The reverse leakage decreased by three orders of magnitude,the forward turn-on voltage increased and the ideality factor reduced from 3.07 to 2.08.展开更多
文摘Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
文摘In this study, the authors have shown the power conversion efficiency of flexible organic solar cells. The structure of the device is PET/ITO/PEDOT： PSS/P3HT： PCBM/AI. P3HT （poly-3-hexylthiophene）. It was used as an electron donor, PCBM （[6, 6]-phenyl C6 l-butyric acid methyl ester） as an electron acceptor and PEDOT： PSS used as a HIL （hole injection layer）. These materials were deposited by spin coating method on the flexible substrates. Photolithography method is used to etch ITO. The electrical parameters of the fabricated cells were investigated by means of J （V）, FF （fill factor）, the efficiency （r/）, photocurrent and IPCE measurement. It was observed that 45% of the absorbed photons are converted into current. The results obtained using etching technology by photolithography is better than that obtained in the clean room.
基金supported by the State Key Development Programfor Basic Research of China(No.2002CB311903)the Key Innovation Program of the Chinese Academy of Sciences(No.KGCX2-S W-107)~~
文摘This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are introduced, which cause that gate currents are not dominated by the thermal electron emission mechanism. N vacancies enhance the tunneling effect and reduce the Schottky barrier height as n-type doped in the etched AIGaN surface.A post-gate process for AlGaN/GaN HEMTs,annealing at 400℃ in a nitrogen ambient for 10min is introduced. After annealing, Ni atoms of gate metal reacted with Ga atoms of AlGaN, and N vacancies were reduced. The reverse leakage decreased by three orders of magnitude,the forward turn-on voltage increased and the ideality factor reduced from 3.07 to 2.08.
