利用动态规划和电势理论规划UAV三维航迹

用改进的电势理论规划无人机的三维航迹。充分考虑了地形威胁、火力及雷达威胁同时存在的情况,并对它们的权重对航迹规划的影响进行了研究。通过限制航线到包含任务起止点直线的距离,不但克服了电势法无法收敛目标点的问题,而且可以缩短飞行航程;研究惩罚函数中各因素不同权重对飞行航线的影响,选择出最优权重系数;通过仿真试验可知,该方法能够成功地为无人机规划出安全的飞行路径。

基于优化的电势理论规划三维飞行路径

利用优化的电势理论进行飞行器三维航迹规划。对电势理论进行了优化,使其既能回避雷达、火力威胁,又能有效地回避地形威胁,使规划出的三维航迹具有一定的实用性。根据突防任务的需要,确定地形威胁与雷达、火力威胁的权重,并将模拟地形的高程数据与雷达、火力威胁按各自的权重叠加得到综合威胁电场;通过限定位于起始点和目标点之间的搜索范围,并对搜索条件进行改进,保证飞行路径最终能收敛于目标点;最后,用坡度限制平滑算法、曲率限制平滑算法对航迹进行法向加速度和曲率限制使其符合飞行器机动性能和可飞性要求。仿真结果表明,优化的电势理论可以进一步考虑地形威胁,而且在能够考虑目标点附近的各种威胁,提高了该方法的实用性,还能缩短航线规划的时间。

应用改进的电势理论规划三维飞行路径

改进了电势理论使其能回避地形威胁,规划实用的三维航迹。将模拟地形的高程数据矩阵按一定的权重叠加到威胁电场上,使威胁场不但能反映雷达、火力威胁而且能反映地形威胁;通过限定位于起始点和目标点之间的搜索范围,减少了计算的复杂度,保证飞行路径最终能到达目标点;同时,在上述航迹规划的基础上,由坡度限制平滑算法,曲率限制平滑算法对垂直航迹进行法向加速度和曲率的约束求得适合飞行器机动性能的飞行的路线。

利用改进威胁模型的电势理论的三维飞行路径规划

用改进威胁模型规划后的电势理论划出实用的三维航迹.对有地形威胁和雷达、火力威胁的各种情况进行了分类、分析,并推出计算公式.通过限定搜索范围为包含起始点和目标点之间的矩形区域,不但减少了计算的复杂度,而且保证飞行路线收敛于目标点.用坡度限制平滑算法和用曲率限制平滑算法对上述航迹的法向加速度和曲率进行约束,得到符合飞行器机动性的飞行路线.

使用电势理论规划威胁回避路径

本文讨论了对于低空突防威胁回避，基于电势理论的航线生成算法，该算法在计算过程中，只使用当前位置临近诸点的信息，计算速度快，可以非常方便地处理动态威胁信息，满足突防任务的要求。

酸性化学镀镍磷合金的动力学机理

通过极化曲线研究了3种不同溶液(阴极液、阳极液和完整镀液)的电化学行为,测定了主盐、还原剂浓度以及镀液p H和体系温度对化学镀镍沉积速率的影响.与直接在镁合金上化学镀镍并使用重量分析法得到的沉积速率相比较发现,完整镀液体系的极化曲线才能真实地反映化学镀镍的沉积过程,其过程不能简单视为由彼此完全独立毫无关联的阴阳极半反应构成.根据Butler-Volmer公式,本化学镀液体系的化学镀镍过程属混合控制,其表观反应活化能为42.89 k J·mol-1.

温室内轨道式喷灌装置设计

为达到温室内灌溉节约用水的目的,设计可沿轨道运动的三自由度倒挂机械臂喷灌装置,同时,可保障作物生长在最佳湿度土壤中,以提高作物产量。本文提出一种基于势函数、电势场理论的土壤湿度传感器均匀性布点方法,可精确采集区域内土壤湿度;采用模糊控制更加精确地控制土壤湿度;为快速响应控制指令,采用PI方法对各关节电机进行控制。计算、分析及仿真结果表明:PI控制可使装置快速响应指令进行运动,响应时间小于1 s;传感器均匀布点方法与土壤湿度模糊控制方法相结合,可精确控制电磁阀开闭时间,模糊控制响应时间小于1 s。装置整体结构模型搭建完成,响应速度快,运动路径及动作可按设定执行。

电磁暂态仿真中网络等值的方法研究

在进行电磁暂态仿真时,为降低计算规模,需要对电网数据进行等值处理。在利用电力系统综合稳定程序(PSASP)进行Ward等值后,采用基于戴维南定理的多电势等效理论,实现了电磁暂态仿真时系统的网络等值,并开发了相关的等效转换软件。针对某省级电网算例系统,利用PSCAD/EMTDC仿真软件搭建了等值后的系统模型,对算例系统等值前后的线路潮流、节点电压以及短路电流进行了对比分析,验证了所提出方法的有效性和正确性。

The Bipolar Theory of the Field-Effect Transistor:X.The Fundamental Physics and Theory(All Device Structures)

This paper describes the foundation underlying the device physics and theory of the semiconductor field effect transistor which is applicable to any devices with two carrier species in an electric field. The importance of the boundary conditions on the device current-voltage characteristics is discussed. An illustration is given of the transfer DCIV characteristics computed for two boundary conditions,one on electrical potential,giving much higher drift-limited parabolic current through the intrinsic transistor, and the other on the electrochemical potentials, giving much lower injection-over-thebarrier diffusion-limited current with ideal 60mV per decade exponential subthreshold roll-off, simulating electron and hole contacts. The two-MOS-gates on thin pure-body silicon field-effect transistor is used as examples

The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.

Theoretical Calculations of Transition Probabilities and Oscillator Strengths for Sc（Ⅲ） and Y（Ⅲ）

The Weakest Bound Electron Potential Model theory is used to calculate transition probability-values and oscillator strength-values for individual lines of Sc（Ⅲ） and Y（Ⅲ）. In this method, by solving the SchrSdinger equation of the weakest bound electron, the expressions of energy eigenvalue and the radial function can be obtained. And a coupled equation is used to determine the parameters which are needed in the calculations. The ob- tained results of Sc（III） from this work agree very well with the accepted values taken from the National Institute of Standards and Technoligy （NIST） data base, most deviations are within the accepted level. For Y（Ⅲ） there are no accepted values reported by the NIST data base. So we compared our results of Y（Ⅲ） with other theoretical results, good agreement is also obtained.

A theoretical study of electrocatalytic ammonia synthesis on single metal atom/MXene

Electrocatalytic ammonia synthesis under mild conditions is an attractive and challenging process in the earth’s nitrogen cycle,which requires efficient and stable catalysts to reduce the overpotential.The N2 activation and reduction overpotential of different Ti3C2O2-supported transition metal(TM)(Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Mo,Ru,Rh,Pd,Ag,Cd,and Au)single-atom catalysts have been analyzed in terms of the Gibbs free energies calculated using the density functional theory(DFT).The end-on N2 adsorption was more energetically favorable,and the negative free energies represented good N2 activation performance,especially in the presence Fe/Ti3C2O2(﹣0.75 eV).The overpotentials of Fe/Ti3C2O2,Co/Ti3C2O2,Ru/Ti3C2O2,and Rh/Ti3C2O2 were 0.92,0.89,1.16,and 0.84 eV,respectively.The potential required for ammonia synthesis was different for different TMs and ranged from 0.68 to 2.33 eV.Two possible potential-limiting steps may be involved in the process:(i)hydrogenation of N2 to*NNH and(ii)hydrogenation of*NH2 to ammonia.These catalysts can change the reaction pathway and avoid the traditional N–N bond-breaking barrier.It also simplifies the understanding of the relationship between the Gibbs free energy and overpotential,which is a significant factor in the rational designing and large-scale screening of catalysts for the electrocatalytic ammonia synthesis.

Geometrical Structures and Electronic Properties of Copper-Doped Aluminum Clusters

Using density function theory （DFT）, the Cu-doped Aln （n=1-15） clusters have been stud- ied. The electron affinity, ionization potential, Mulliken population analysis of Cu, mean polarizability, polarizability anisotropy, dipole moments and HOMO-LUMO gaps have also been calculated on the basis of optimized geometries. The results indicate that there is magic numbers in copper-doped aluminum clusters and electronic characteristic depended on the size of clusters. As n=13, the electron affinity and ionization potential of cluster changed more than 0.3 and 0.6 eV respectively, compared with neighborhood clusters.

Signature of Different Phases of Ricci Flat Black Holes and AdS Solitons in Gauss-Bonnet Gravity

From the perturbation around the background spacetimes in the Gauss Bonnet gravity, we find the physical evidence that Ricci fiat AdS black holes and AdS solitons are different physical configurations and stay in different phases, this serves as a strong support to the previous mathematical and thermodynamieal arguments.

Effect of Interaction Potential on Laser-assisted e-Ar Scattering

The interaction potentials between electron and atom play an important role in electron- atom scattering. Using three potential models, the absolute differential cross section has been calculated by the second Born approximation theory. Results show that these model potentials are successful in the laser-assisted e-Ar scattering system. The influence of static potential, exchange potential and polarization potential on the absolute differential cross section is also analyzed and discussed.

Electrode Potential Explaining the Growth of Anodic Oxides

The formation mechanism of porous anodic oxides remains unclear till now.The classical field-assisted dissolution(FAD)theory cannot explain the relationship between the current curve and FAD reaction,and the influence of the electrode potential on anodization is rarely reported.The electrode potential theory,oxygen bubble model and the ionic current and electronic current theories were introduced to explain the growth of porous anodic oxides of three metals(Ti,Zr and Fe).Taking the anodization of Ti in aqueous solution containing 0.5wt% NH_(4)F as an example,the electrode potential was calculated,and the morphology of porous anodic oxides was investigated at low voltages.Results show that the growth of porous anodic oxides is determined by the ratio of the ionic current to the electronic current.During the anodization,metals are classified into two groups:one is easy to form the compact oxide layer,and the other is easy to induce oxygen releasing,thus forming oxygen bubbles.The electrolyte is also classified into two groups correspondingly:compact oxide layer-assisted electrolyte and releasing oxygen-assisted electrolyte.

Magnetic-structure coupling dynamic model of a ferromagnetic plate parallel moving in air-gap magnetic field

Aiming at the air-gap magnetic field excited by wall armatures,Laplace’s partial differential equation of air-gap magnetic potential is achieved by means of the electromagnetic field theory.According to the magnetic boundary conditions and the method of separation of variables,the magnetic potential of the air-gap magnetic field is obtained.Based on the magnetization force model and Lorentz force of ferromagnetic thin-walled structures,and introducing the electromagnetic constitutive relations and boundary conditions,the calculation model of electromagnetic force of the soft ferromagnetic thin plate moving in air-gap magnetic field is established.Considering geometric nonlinearity,expressions of strain energy and kinetic energy of the elastic thin plate and the work of forces are given,respectively.The magnetic-structure coupling nonlinear vibration equations of ferromagnetic thin plate parallel moving in the air-gap magnetic field excited by armatures are obtained by using the Hamilton principle,which can be of the characterization of the system dynamics model with electro-magneto-velocity-mechanical interaction.Through numerical examples,primary resonance characteristics of the strip thin plate under the action of air-gap magnetic force are obtained.The results show that the two stable amplitude values will increase as amplitude of magnetic potential increases and thickness of air-gap decreases,and the amplitude’s multi-valued region will change due to the varieties of magnetic potential,air-gap and velocity.The model established in this paper is a theoretical reference for investigation on the multi-field coupling dynamic behaviors of structures moving in complex electromagnetic fields.

On Hawking Radiation from a Charged Black Hole of Heterotic String Theory

We investigate the Hawking radiation of a GMGHS charged black hole from the heterotic string scenario by the massive particles turmeling method. We consider the spacetime background to be dynamical, incorporate the self-gravitation effect of the emitted particles and show that the tunneling rate is related to the change of Bekenstein- Hawking entropy and the derived emission spectrum does not deviate from the pure thermal spectrum of Schwrzschild＇s black hole.

First-Principles Study of Geometries,Stabilities and Electronic Properties of Ca_2Sin_(n=1–11) Clusters

The equilibrium geometries, relative stabilities, and electronic properties of Ca2Sin （n = 1-11） clusters have been systematically investigated by using the density function theory at the 6-311G （d） level The optimized geometries indicate that the most stable isomers have three-dimensional structures for n = 3-11. The electronic properties of Ca2 Sin （n = 1-11） dusters axe obtained through the analysis of the natural charge population, natural electron configuration, vertical ionization potential, and vertical electron affinity. The results show that the charges in corresponding Ca2Sin clusters transfer from the Ca atoms to the Sin host. Based on the obtained lowest-energy geometries, the size dependence of cluster properties, such as averaged binding energies, fragmentation energies, second-order energy differences, HOMO- LUMO gaps and chemical hardness, are deeply discussed.