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高温高压电化学测量系统在核电厂中的应用研究进展 被引量:1
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作者 李宇春 周年光 +5 位作者 肖忠良 蒋娅 喻小伟 庞飞飞 邓芬芳 高帆 《核科学与工程》 CSCD 北大核心 2011年第3期207-211,共5页
针对压水堆核电厂一、二回路水化学及腐蚀的监测情况,综述了高温高压电化学测量系统的模拟研究现状,探讨了在线电化学测量的三种研究方案,并以实时电化学腐蚀电位(ECP)的测量为例说明了其在核电厂评价及运行工况优化过程中的作用,指出... 针对压水堆核电厂一、二回路水化学及腐蚀的监测情况,综述了高温高压电化学测量系统的模拟研究现状,探讨了在线电化学测量的三种研究方案,并以实时电化学腐蚀电位(ECP)的测量为例说明了其在核电厂评价及运行工况优化过程中的作用,指出在线电化学测量技术在核电厂具有很大应用潜力。 展开更多
关键词 电化学测量系统 高温高压 电化学腐蚀电位 水工况优化
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金属在气体介质中瞬间腐蚀速度的电化学测量系统简介 被引量:2
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作者 翁永基 《腐蚀科学与防护技术》 CAS CSCD 1989年第2期47-47,共1页
金属在水溶性介质中腐蚀速度的测量,已有比较成熟的电化学仪器和方法,但对大气及其他气体中的金属腐蚀尚缺乏相应的快速铡量方法。常规的大气曝露试验需要很长时间,而一般的加速试验结果则常常不很可靠。
关键词 金属 气体介质 瞬间腐蚀速度 电化学测量系统
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Effect of CeO_2 on Corrosion Resistance of C_f/2024 Composites
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作者 Wu Linli Yao Guangchun 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2009年第A03期152-155,共4页
The corrosion resistance of 2024 alloys and Cf/2024 composites in 3.5% NaCl aqueous solution at normal temperature was studied by IM6e electrochemical measurement system, scanning electron microscopy(SEM) and electron... The corrosion resistance of 2024 alloys and Cf/2024 composites in 3.5% NaCl aqueous solution at normal temperature was studied by IM6e electrochemical measurement system, scanning electron microscopy(SEM) and electron diffraction scanning(EDS). The results indicate that CeO2 can raise the corrosion potential of the 2024 alloys and the Cf /2024 composites, prevent the pitting on the alloys and composites surface, and restrain the reaction of divided hydrogen, refine grain, and make the surface more even. 展开更多
关键词 复合材料 耐腐蚀性 氯化钠 电化学测量系统
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Realization of low contact resistance close to theoretical limit in graphene transistors 被引量:5
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作者 Hua Zhong Zhiyong Zhang Bingyan Chen Haitao Xu Dangming Yu Le Huang Lianmao Peng 《Nano Research》 SCIE EI CAS CSCD 2015年第5期1669-1679,共11页
Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphe... Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphene transistors and further explore the resistance limit between graphene and metal contacts. The Pd/graphene contact resistance at room temperature is reduced below the 100 Ω·μm level both on mechanically exfoliated and chemical-vapor-deposition graphene by adopting high-purity palladium and high-quality graphene and controlling the fabrication process to not contaminate the interface. After excluding the parasitic series resistances from the measurement system and electrodes, the retrieved contact resistance is shown to be systematically and statistically less than 100 Ω·μm, with a minimum value of 69 Ω·μm, which is very close to the theoretical limit. Furthermore, the contact resistance shows no clear dependence on temperature in the range of 77-300 K; this is attributed to the saturation of carrier injection efficiency between graphene and Pd owing to the high quality of the graphene samples used, which have a sufficiently long carrier mean-free-path. 展开更多
关键词 graphene field-effect transistors contact resistance metal-graphene interface transfer length method
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