The measurement theorem of fiber optically driven instrument for high-voltage line current is presented. The PLL voltage-frequency-narrow pulse principle and its micro-consumption mechanism are proposed, followed by a...The measurement theorem of fiber optically driven instrument for high-voltage line current is presented. The PLL voltage-frequency-narrow pulse principle and its micro-consumption mechanism are proposed, followed by analysis on the two main factors affecting PLL measurement precision. A software design scheme using 80C196KB micro-controller is introduced. The experiment result is satisfactory.展开更多
A fully integrated frequency synthesizer with low jitter and low power consumption in 0.18 μm CMOS (complementary metal-oxide semiconductor) technology is proposed in this paper.The frequency synthesizer uses a novel...A fully integrated frequency synthesizer with low jitter and low power consumption in 0.18 μm CMOS (complementary metal-oxide semiconductor) technology is proposed in this paper.The frequency synthesizer uses a novel single-end gain-boosting charge pump, a differential coupled voltage controlled oscillator (VCO) and a dynamic logic phase/frequency detecor (PFD) to acquire low output jitter.The output frequency range of the frequency synthesizer is up to 1 200 MHz to 1 400 MHz for GPS (global position system) application.The post simulation results show that the phase noise of VCO is only 127.1 dBc/Hz at a 1 MHz offset and the Vp-p jitter of the frequency synthesizer output clock is 13.65 ps.The power consumption of the frequency synthesizer not including the divider is 4.8 mW for 1.8 V supply and it occupies a 0.8 mm×0.7 mm chip area.展开更多
We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capa...We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with different layer thicknesses.展开更多
基金NationalNaturalScienceFoundationofChina (No .6 974 80 0 1) KeySubjectSpecialFoundationofMechanicalBureau
文摘The measurement theorem of fiber optically driven instrument for high-voltage line current is presented. The PLL voltage-frequency-narrow pulse principle and its micro-consumption mechanism are proposed, followed by analysis on the two main factors affecting PLL measurement precision. A software design scheme using 80C196KB micro-controller is introduced. The experiment result is satisfactory.
基金Funded by the Communication System Project of Jiangsu Provincial Education Committee under grant No.JHB04010
文摘A fully integrated frequency synthesizer with low jitter and low power consumption in 0.18 μm CMOS (complementary metal-oxide semiconductor) technology is proposed in this paper.The frequency synthesizer uses a novel single-end gain-boosting charge pump, a differential coupled voltage controlled oscillator (VCO) and a dynamic logic phase/frequency detecor (PFD) to acquire low output jitter.The output frequency range of the frequency synthesizer is up to 1 200 MHz to 1 400 MHz for GPS (global position system) application.The post simulation results show that the phase noise of VCO is only 127.1 dBc/Hz at a 1 MHz offset and the Vp-p jitter of the frequency synthesizer output clock is 13.65 ps.The power consumption of the frequency synthesizer not including the divider is 4.8 mW for 1.8 V supply and it occupies a 0.8 mm×0.7 mm chip area.
基金supported by the Shanghai Committee of Science and Technology, China (Grant No. 08Jc1402300)
文摘We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with different layer thicknesses.
