A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system....A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.展开更多
The ratio measurement by means of the sensing optical fiber and the reference fiber with different beginning positions, and the technique to improve the stability of the sensor are first described. Then the ability to...The ratio measurement by means of the sensing optical fiber and the reference fiber with different beginning positions, and the technique to improve the stability of the sensor are first described. Then the ability to restrain and compensate the interference of the same nature through the double channel ratio measurement is illustrated. Finally, the performance of sensor and its engineering design are discussed.展开更多
A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock reco...A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock recovery method based on filter,and implements monolithic clock-recovery IC.The designed circuits include phase detector,voltage-controlled oscillator and loop filter.Among them,the voltage-control oscillator is a modified two-stage ring oscillator,which provides quadrature clock signals and presents wide voltage-controlled range and high voltage-controlling sensitivity.展开更多
Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adju...Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW^-1. The detectivity of 2D GaTe devices is -10^12 Jones, which surpasses that of currently-exploited InGaAs photodetectors （10^11-10^12 Jones）. To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.展开更多
In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transie...In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed.展开更多
Visible and near-infrared(NIR)light dual-band photodetectors(PDs)have potential applications in signal detection,bioimaging,optical communications and safety monitoring.Herein,we report an ultrafast perovskite/organic...Visible and near-infrared(NIR)light dual-band photodetectors(PDs)have potential applications in signal detection,bioimaging,optical communications and safety monitoring.Herein,we report an ultrafast perovskite/organic heterojunction dual-mode PD with a voltage-modulated photoresponse range in visible and NIR spectra.The PD,comprising a perovskite layer to absorb visible light(500–810 nm)and an organic bulk heterojunction layer for NIR light absorption(810–950 nm),exhibited a switchable spectral response in the visible or NIR bands.The voltage-modulated visible and NIR photoresponses of the PD were attributable to controlled charge photogeneration in perovskite and organic blend thin films under different bias polarities.The device exhibited peak responsivities of 93.5 and 102.2 mA/W in the visible and NIR bands,respectively;a high detectivity of 4.3×10^(9) Jones(at forward bias of 0.7 V and incident 625 nm light)and 1.6×10^(12) Jones(at reverse bias of–1.5 V and incident 900 nm light);a fast microsecond response time;and a wide dynamic range(>120 dB)both in the visible mode and NIR mode.Also,this voltage-modulated dual-band PD shows promising applications in visible light and NIR imaging,which is proven by demonstrating a PD array with 25 pixels(5×5).展开更多
In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct ...In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct current(DC) bias voltage compensation, the single-photon detector can work stably in Geiger mode from-40 °C to 35 °C with an almost constant avalanche gain. It provides a solution for single-photon detection at outdoor operation in all-weather conditions.展开更多
文摘A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.
文摘The ratio measurement by means of the sensing optical fiber and the reference fiber with different beginning positions, and the technique to improve the stability of the sensor are first described. Then the ability to restrain and compensate the interference of the same nature through the double channel ratio measurement is illustrated. Finally, the performance of sensor and its engineering design are discussed.
文摘A monolithic clock-recovery circuit used in 622 Mb/s optical communication system is designed,which is based on the phase-locked loop theory,and uses bipolar transistor model.It overcomes the shortcoming of clock recovery method based on filter,and implements monolithic clock-recovery IC.The designed circuits include phase detector,voltage-controlled oscillator and loop filter.Among them,the voltage-control oscillator is a modified two-stage ring oscillator,which provides quadrature clock signals and presents wide voltage-controlled range and high voltage-controlling sensitivity.
文摘Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW^-1. The detectivity of 2D GaTe devices is -10^12 Jones, which surpasses that of currently-exploited InGaAs photodetectors （10^11-10^12 Jones）. To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.
基金supported by the National Key Basic Research Program of China (Grant No. 2014CB744300)the Specially Funded Program on National Key Scientific Instruments and Equipment Development (GrantNo. 2012YQ140005)+1 种基金the Beijing National Science Foundation (Grant No. 4122064)the Science Foundation of the China University of Petroleum (Beijing)
文摘In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed.
基金supported by the National Natural Science Foundation of China(52027817 and 03012800001)Shenzhen Science and Technology Innovation Committee(JCYJ20200109144614514)+1 种基金the support from the Hong Kong Research Grant Council for the GRF grant(11314122)the Guangdong Major Project of Basic and Applied Basic Research(2019B030302007)。
文摘Visible and near-infrared(NIR)light dual-band photodetectors(PDs)have potential applications in signal detection,bioimaging,optical communications and safety monitoring.Herein,we report an ultrafast perovskite/organic heterojunction dual-mode PD with a voltage-modulated photoresponse range in visible and NIR spectra.The PD,comprising a perovskite layer to absorb visible light(500–810 nm)and an organic bulk heterojunction layer for NIR light absorption(810–950 nm),exhibited a switchable spectral response in the visible or NIR bands.The voltage-modulated visible and NIR photoresponses of the PD were attributable to controlled charge photogeneration in perovskite and organic blend thin films under different bias polarities.The device exhibited peak responsivities of 93.5 and 102.2 mA/W in the visible and NIR bands,respectively;a high detectivity of 4.3×10^(9) Jones(at forward bias of 0.7 V and incident 625 nm light)and 1.6×10^(12) Jones(at reverse bias of–1.5 V and incident 900 nm light);a fast microsecond response time;and a wide dynamic range(>120 dB)both in the visible mode and NIR mode.Also,this voltage-modulated dual-band PD shows promising applications in visible light and NIR imaging,which is proven by demonstrating a PD array with 25 pixels(5×5).
基金supported by the National Natural Science Foundation of China(No.11374105)
文摘In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct current(DC) bias voltage compensation, the single-photon detector can work stably in Geiger mode from-40 °C to 35 °C with an almost constant avalanche gain. It provides a solution for single-photon detection at outdoor operation in all-weather conditions.
