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一种采用高阶温度补偿的带隙电压基准的设计 被引量:1
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作者 张科峰 肖华 汪华 《通信电源技术》 2007年第4期36-38,共3页
在DC-DC变换器芯片设计中,用于产生参考电压的带隙基准的精度直接影响到芯片的控制精度。文中设计了。一种高阶温度补偿的精确带隙电压基准,使用0.6μm BCD 2P2M工艺库,HSPICE仿真显示在-25℃~125℃范围,带隙基准电压为1.249V,... 在DC-DC变换器芯片设计中,用于产生参考电压的带隙基准的精度直接影响到芯片的控制精度。文中设计了。一种高阶温度补偿的精确带隙电压基准,使用0.6μm BCD 2P2M工艺库,HSPICE仿真显示在-25℃~125℃范围,带隙基准电压为1.249V,温度系数可低达2.7ppm/℃,电压线性调整率为0.004%,电源抑制比PSRR达87dB。 展开更多
关键词 带隙电压基准 温度补偿 温度系数 电压线性调整率 电源抑制比
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A Novel CMOS Voltage Reference Based on Threshold Voltage Difference Between p-Type and n-Type MOSFETs
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作者 孔明 郭健民 +1 位作者 张科 李文宏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第10期1546-1550,共5页
A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The referen... A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The reference has been successfully implemented in a Chartered 0.35μm CMOS process. The occupied chip area is 0. 022mm^2. Measurements indicate that without trimming, the average output voltage error is 6mV at room temperature compared with the simulation result. The temperature coefficient is 180ppm/℃ in the worst case in the temperature range of 0 to 100℃ ,and the line regulation is ± 1.1%. The reference is applied in an adaptive power MOSFET driver. 展开更多
关键词 MOS-only voltage reference threshold voltage temperature coefficient line regulation
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Design of a Bandgap Reference with a Wide Supply Voltage Range 被引量:4
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作者 孙越明 赵梦恋 吴晓波 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第8期1529-1534,共6页
An on-chip voltage reference with a wide supply voltage range is required by some applications,especially that of power management (PM) controller chips applied to telecommunication, automotive, lighting equipment, ... An on-chip voltage reference with a wide supply voltage range is required by some applications,especially that of power management (PM) controller chips applied to telecommunication, automotive, lighting equipment, etc., when high power supply voltage is needed. Accordingly,a new bandgap reference with a wide supply voltage range is proposed. Due to the improved structure,it features a high power supply rejection ratio (PSRR) and high temperature stability. In addition, an auxiliary micro-power reference is introduced to support the sleep mode of the PM chip and reduce its standby power consumption. The auxiliary reference provides bias currents in normal mode and a 1.28V reference voltage in sleep mode to replace the main reference and save power. Simulation results show that the reference provides a reference volt- age of 1.27V,which has a 3.5mV drift over the temperature range from -20 to 120~C and 56t^V deviation over a supply voltage range from 3 to 40V. The PSRR is higher than 100dB for frequency below 10kHz. The circuit was completed in 1.5tzm BCD (Bipolar-CMOS-DMOS) technology. The experimental results show that all main expectations are achieved. 展开更多
关键词 wide supply voltage range bandgap reference line regulation sleep mode micro power
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