电子镇流器由于具有节能,发光无频闪和易于实现联网控制(如 IEC929附录 E 的有关要求)等一系列优点,而得到了广泛的应用。荧光灯如采用适当的灯丝预热方法,对提高荧光灯的寿命有非常重要的作用。介绍了几种常用的荧光灯灯丝预热方法及...电子镇流器由于具有节能,发光无频闪和易于实现联网控制(如 IEC929附录 E 的有关要求)等一系列优点,而得到了广泛的应用。荧光灯如采用适当的灯丝预热方法,对提高荧光灯的寿命有非常重要的作用。介绍了几种常用的荧光灯灯丝预热方法及特点。展开更多
The chemical vapor deposition （CVD） of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic ...The chemical vapor deposition （CVD） of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic defects are unavoidably formed along the Cu grain boundaries, degrading the electrical properties of graphene and increasing the device-to-device variability. Here, we introduce a method of hot-pressing as a surface pre-treatment to improve the thermal stability of Cu thin film for the suppression of grain boundary grooving. The flattened Cu thin film maintains its smooth surface even after the subsequent high temperature CVD process necessary for graphene growth, and the formation of graphene without wrinkles is realized. Graphene field effect transistors （FETs） fabricated using the graphene synthesized on hot-pressed Cu thin film exhibit superior field effect mobility and significantly reduced device-to-device variation.展开更多
文摘The chemical vapor deposition （CVD） of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic defects are unavoidably formed along the Cu grain boundaries, degrading the electrical properties of graphene and increasing the device-to-device variability. Here, we introduce a method of hot-pressing as a surface pre-treatment to improve the thermal stability of Cu thin film for the suppression of grain boundary grooving. The flattened Cu thin film maintains its smooth surface even after the subsequent high temperature CVD process necessary for graphene growth, and the formation of graphene without wrinkles is realized. Graphene field effect transistors （FETs） fabricated using the graphene synthesized on hot-pressed Cu thin film exhibit superior field effect mobility and significantly reduced device-to-device variation.
