使用传输线理论的硅通孔电参数提取方法

针对三维集成电路中的关键技术硅通孔的电特性,使用传输线理论提取了其单位长度RLGC参数。将硅通孔等效为传输线,利用HFSS仿真结果并结合传输线理论给出了具体的参数提取方法。计算结果表明,硅通孔单位长度RLGC参数呈现较强的频变特性,当频率从1 MHz增加到20 GHz时,单位长度的电阻和导纳分别从0.45 mΩ/μm和2.5μS/μm增加到2.5 mΩ/μm和17μS/μm,而单位长度电感和电容分别从8.7 p H/μm和8.8 f F/μm减小至7.5 p H/μm和0.2 f F/μm。与传统的阻抗矩阵和导纳矩阵提取方法相比,该方法具有结果绝对收敛和适用频率高等诸多优点,可进一步应用于三维集成电路的仿真设计。

基于LabVIEW的虚拟心电监护仪系统设计

目的 :基于LabVIEW软件和相应的心电硬件采集模块设计一种虚拟心电监护仪系统。方法 :采用Vernier公司的心电传感器和NI ELVIS作为信号采集平台。在LabVIEW软件平台上,用图形化的编程语言,设计出信号采集及处理模块、特征参数提取模块和报表输出模块。结果:该监护仪系统能用计算机软件实现心电信号的读取、处理、分析及报表输出等功能,克服了临床医生心电分析的个体差异。结论:该监护仪系统具有操作简单、成本低和通用性强等优点,对小型化、智能化多生理参数检测系统的研制有一定的参考价值。

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

Non-Destructive Parameters Extraction for a Novel IGBT SPICE Model and Verified with Measurements

An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.

Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.

A Novel Technique of Parameter Extraction for Short Channel Length LDD MOSFETs

A novel parameter extraction technique suitable f or short channel length lightly-doped-drain (LDD) MOSFET's is proposed which seg ments the total gate bias range,and executes the linear regression in every subs ections,yielding the gate bias dependent parameters,such as effective channel le ngth,parasitic resistance,and mobility,etc.This method avoids the gate bias rang e optimization,and retains the accuracy and simplicity of linear regression.The extracted gate bias dependent parameters are implemented in the compact I-V model which has been proposed for deep submicron LDD MOSFET's.The good agreemen ts between simulations and measurements of the devices on 0.18μm CMOS technolo gy indicate the effectivity of this technique.

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

Modeling and Parameter Extraction of VDMOSFET

A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction.

MATERIAL ELECTROMAGNETIC PARAMETERS EXTRACTION USING SVM METHOD

The method extracting the electromagnetic parameters from scattering coefficients was studied in this paper. The Support Vector Machine (SVM) method is used to solve the inverse problem of parameters extraction. The mapping relationship is set up by calculating a large number of S pa-rameters from the samples with different permittivity by using transmission line theory. The simulated data set is used as training data set for SVM. After the training, the SVM is used to predict the permittivity of material from the scattering coefficients.