A novel 1.55 μm spot-size converter integrated with electroabsorption modulator is designed and fabricated with conventional photolithography and chemical wet etching process.For the modulator,we employed a deeply-et...A novel 1.55 μm spot-size converter integrated with electroabsorption modulator is designed and fabricated with conventional photolithography and chemical wet etching process.For the modulator,we employed a deeply-etched ridge waveguide structure with polyimide on each side of its walls.For the spot-size converter,we employed a buried double-core structure in which a ridge-based passive waveguide is incorporated.The wide and thin passive waveguide is optically combined with a laterally tapered active waveguide to control the mode size.By simulation,the figure of merit is 4.17(dB/V/(100 μm)) and the beam divergence angles in the horizontal and vertical directions are as small as 11.2°×13.0°,respectively.展开更多
基金Supported by the National Natural Science Foundation of China(90101023) and National"973"Project(20000683-1)
文摘A novel 1.55 μm spot-size converter integrated with electroabsorption modulator is designed and fabricated with conventional photolithography and chemical wet etching process.For the modulator,we employed a deeply-etched ridge waveguide structure with polyimide on each side of its walls.For the spot-size converter,we employed a buried double-core structure in which a ridge-based passive waveguide is incorporated.The wide and thin passive waveguide is optically combined with a laterally tapered active waveguide to control the mode size.By simulation,the figure of merit is 4.17(dB/V/(100 μm)) and the beam divergence angles in the horizontal and vertical directions are as small as 11.2°×13.0°,respectively.
