Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as ...Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge（ENC） is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-（RC）,semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.展开更多
In planning and executing marine controlled-source electromagnetic methods, seafloor electromagnetic receivers must overcome the problems of noise, clock drift, and power consumption. To design a receiver that perform...In planning and executing marine controlled-source electromagnetic methods, seafloor electromagnetic receivers must overcome the problems of noise, clock drift, and power consumption. To design a receiver that performs well and overcomes the abovementioned problems, we performed forward modeling of the E-field abnormal response and established the receiver＇s characteristics. We describe the design optimization and the properties of each component, that is, low-noise induction coil sensor, low-noise Ag/AgCI electrode, low-noise chopper amplifier, digital temperature-compensated crystal oscillator module, acoustic telemetry modem, and burn wire system. Finally, we discuss the results of onshore and offshore field tests to show the effectiveness of the developed seafloor electromagnetic receiver and its performance： typical E-field noise of 0.12 nV/m/rt（Hz） at 0.5 Hz, dynamic range higher than 120 dB, clock drift lower than 1 ms/day, and continuous operation of at least 21 days.展开更多
A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achie...A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.展开更多
A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface...A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface. Diode-connected nMOS transistors with a negative voltage between the gate and source are candidates for the large resistors necessary for the preamplifier. A novel analysis is given to determine the noise power spectral density. Simulation results show that the two-stage CMOS preamplifier in a closed-loop capacitive feedback configuration provides an AC in-band gain of 38.8dB,a DC gain of 0,and an input-referred noise of 277nVmax, integrated from 0. 1Hz to 1kHz. The preamplifier can eliminate the DC offset voltage and has low input-referred noise by novel circuit configuration and theoretical analysis.展开更多
This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows t...This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows the importance of inductance and bias current selection for oscillator phase noise optimization. Differences between CMOS and BJT VCO design strategy are then analyzed and the conclusions are summarized. In this implementation, bonding wires form the resonator to improve the phase noise performance. The VCO is then integrated with other components to form a PLL frequency synthesizer with a loop bandwidth of 30kHz. Measurement shows a phase noise of - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from a 2.5GHz carrier. At a supply voltage of 3V, the VCO core consumes 8mA. To our knowledge,this is the first differential cross-coupled VCO in SiGe BiCMOS technology in China.展开更多
A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gai...A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.展开更多
This paper presents a new class of semiconductor integrated sensor which consists of sensitive components and flip flop circuit. The sensors have high sensitivity and digital output. This paper describes the operatin...This paper presents a new class of semiconductor integrated sensor which consists of sensitive components and flip flop circuit. The sensors have high sensitivity and digital output. This paper describes the operating principle and structure of the sensor. And noise effect on characteristics of the sensor is analysed in detail. The modulated effect of the triangular wave voltage is quantified. As an example, an integrated pressure sensor is introduced and the experimental results agree with the theoretical analyses.展开更多
文摘Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge（ENC） is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-（RC）,semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.
基金sponsored by the 863 Program(No.2009AA09A2012012AA09A201)+1 种基金China Geological Survey Project(No.201100307)the Fundamental Research Funds of the Ministry of Education for the Central Universities(No.2652011249)
文摘In planning and executing marine controlled-source electromagnetic methods, seafloor electromagnetic receivers must overcome the problems of noise, clock drift, and power consumption. To design a receiver that performs well and overcomes the abovementioned problems, we performed forward modeling of the E-field abnormal response and established the receiver＇s characteristics. We describe the design optimization and the properties of each component, that is, low-noise induction coil sensor, low-noise Ag/AgCI electrode, low-noise chopper amplifier, digital temperature-compensated crystal oscillator module, acoustic telemetry modem, and burn wire system. Finally, we discuss the results of onshore and offshore field tests to show the effectiveness of the developed seafloor electromagnetic receiver and its performance： typical E-field noise of 0.12 nV/m/rt（Hz） at 0.5 Hz, dynamic range higher than 120 dB, clock drift lower than 1 ms/day, and continuous operation of at least 21 days.
文摘A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.
文摘A monolithic integrated CMOS preamplifier is presented for neural recording applications. Two AC-coupied capacitors are used to eliminate the large and random DC offsets existing in the electrode-electrolyte interface. Diode-connected nMOS transistors with a negative voltage between the gate and source are candidates for the large resistors necessary for the preamplifier. A novel analysis is given to determine the noise power spectral density. Simulation results show that the two-stage CMOS preamplifier in a closed-loop capacitive feedback configuration provides an AC in-band gain of 38.8dB,a DC gain of 0,and an input-referred noise of 277nVmax, integrated from 0. 1Hz to 1kHz. The preamplifier can eliminate the DC offset voltage and has low input-referred noise by novel circuit configuration and theoretical analysis.
文摘This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows the importance of inductance and bias current selection for oscillator phase noise optimization. Differences between CMOS and BJT VCO design strategy are then analyzed and the conclusions are summarized. In this implementation, bonding wires form the resonator to improve the phase noise performance. The VCO is then integrated with other components to form a PLL frequency synthesizer with a loop bandwidth of 30kHz. Measurement shows a phase noise of - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from a 2.5GHz carrier. At a supply voltage of 3V, the VCO core consumes 8mA. To our knowledge,this is the first differential cross-coupled VCO in SiGe BiCMOS technology in China.
文摘A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.
文摘This paper presents a new class of semiconductor integrated sensor which consists of sensitive components and flip flop circuit. The sensors have high sensitivity and digital output. This paper describes the operating principle and structure of the sensor. And noise effect on characteristics of the sensor is analysed in detail. The modulated effect of the triangular wave voltage is quantified. As an example, an integrated pressure sensor is introduced and the experimental results agree with the theoretical analyses.
