The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in...The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.展开更多
WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,ba...WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.展开更多
Mn-doped ZnO diluted magnetic semiconductor nanoparticles are prepared by an ultrasonic assisted sol-gel process.Transmission electron microscopy shows pseudo-hexagonal nanoparticles with an average size of about 24 n...Mn-doped ZnO diluted magnetic semiconductor nanoparticles are prepared by an ultrasonic assisted sol-gel process.Transmission electron microscopy shows pseudo-hexagonal nanoparticles with an average size of about 24 nm.From the analysis of X-ray diffraction,the Mn-doped ZnO nanoparticles are identified to be a wurtzite structure without any impurity phases.The magnetic properties are measured by using superconducting quantum interference device.For the ZnO with 2% Mn doping concentration,a good hysteresis loop indicates fine ferromagnetism with a Curie temperature higher than 350 K.展开更多
The organic π-conjugate d polymers are of major interest materials for the use in electro-optical and no nlinear optical devices. In this work, for a selected polyacetylene chain, the optical absorption spectra in UV...The organic π-conjugate d polymers are of major interest materials for the use in electro-optical and no nlinear optical devices. In this work, for a selected polyacetylene chain, the optical absorption spectra in UV/Vis regime as well as the linear polarizabiliti y and nonlinear hyperpolarizability are calculated by using quantum chemical ab initio and semiempirical methods. The relationship of its optical property to el ectric field is obtained. Some physical mechanism of electric field effect on mo lecular optical property is discussed by means of electron distribution and intr amolecular charge transfer.展开更多
There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Rad...There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Radiation Protection） has published new exposure guidelines with regard to these fields. The aim of this paper is to demonstrate the calculation of the currents and electric fields induced in the human body by external electric fields at 60 Hz, using numerical human models of anatomically-realistic human bodies, and to compare those results with the basic restrictions proposed by the new guidelines. As a result, in the case that a human is exposed to an electric field of 1 kV/m at 60 Hz the short-circuit current of 18 μA flows though the ankles. Furthermore, the electric field of 40 mV/m in the nervous tissue of the adult model is induced by exposure to external electric fields at the reference level, which is enough smaller than the basic restrictions established in the ICNIRP guidelines for occupational exposure.展开更多
A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pul...A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pulse width control (PWM) method. Compared with the conventional phase-controlled dimmer, the proposed PWM dimmer can produce sine wave and did not cause harmonics problem. Furthermore, the proposed control method did not amplify the light flicker due to the independence of input voltage. Therefore, the PWM dimmer can be used as the dimmer of the AC LED lamp instead of the conventional phase-controlled dimmer. The experimental result shows that the proposed PWM dimmer has good performances.展开更多
The optical absorbance in near UV wavelength region in SnO 2 nanoclusters in an external electric field is determined at room temperature. The absorbance spectra as applied field and the absorbance variations with th...The optical absorbance in near UV wavelength region in SnO 2 nanoclusters in an external electric field is determined at room temperature. The absorbance spectra as applied field and the absorbance variations with the applied field are obtained.The relation between absorbance change and applied field is non-linear, and is saturated at high field region.展开更多
With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energ...With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine's ground state energy (-1/4 effective Rydberg) when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.展开更多
We analytically derive the solutions for electromagnetic fields of electric current dipole moment, which is placed in the exterior of the spherical homogeneous conductor, and is pointed along the radial direction. The...We analytically derive the solutions for electromagnetic fields of electric current dipole moment, which is placed in the exterior of the spherical homogeneous conductor, and is pointed along the radial direction. The dipole moment is driven in the low frequency f = 1 kHz and high frequency f = 1 GHz regimes. The electrical properties of the conductor are appropriately chosen in each frequency. Electromagnetic fields are rigorously formulated at an arbitrary point in a spherical geometry, in which the magnetic vector potential is straightforwardly given by the Biot- Savart formula, and the scalar potential is expanded with the Legendre polynomials, taking into account the appropriate boundary conditions at the spherical surface of the conductor. The induced electric fields are numerically calculated along the several paths in the low and high frequeny excitation. The self-consistent solutions obtained in this work will be of much importance in a wide region of electromagnetic induction problems.展开更多
文摘The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.The barrier variation arisen by neutral trap in oxide layer is described as a rectangular potential well in the con- duction band of Si O2 .The different barrier variation of an ultrathin metal- oxide- sem iconductor(MOS) structure with oxide thickness of4nm is numerically calculated.It is shown that the effect of neutral trap on tunneling cur- rent can not be neglected.The tunneling current is increased when the neutral trap exists in the oxide layer.This simple m odel can be used to understand the occurring mechanism of stress induced leakage current.
文摘WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.
基金Supported bythe Hunan Provincial Natural Science Foundation ofChina (No.05JJ30126) the Scientific Research Fund of HunanProvincial Education Department (No.04B061)+1 种基金the Key Labora-tory of Advanced Materials & Rheological Properties (Xiangtan University) ,Ministry of Education (No.KF0506) ,the Fundof Xiangtan University (05IND10) .
文摘Mn-doped ZnO diluted magnetic semiconductor nanoparticles are prepared by an ultrasonic assisted sol-gel process.Transmission electron microscopy shows pseudo-hexagonal nanoparticles with an average size of about 24 nm.From the analysis of X-ray diffraction,the Mn-doped ZnO nanoparticles are identified to be a wurtzite structure without any impurity phases.The magnetic properties are measured by using superconducting quantum interference device.For the ZnO with 2% Mn doping concentration,a good hysteresis loop indicates fine ferromagnetism with a Curie temperature higher than 350 K.
基金Natural Science Foundation from Shandong Province of China (Y2002A06)
文摘The organic π-conjugate d polymers are of major interest materials for the use in electro-optical and no nlinear optical devices. In this work, for a selected polyacetylene chain, the optical absorption spectra in UV/Vis regime as well as the linear polarizabiliti y and nonlinear hyperpolarizability are calculated by using quantum chemical ab initio and semiempirical methods. The relationship of its optical property to el ectric field is obtained. Some physical mechanism of electric field effect on mo lecular optical property is discussed by means of electron distribution and intr amolecular charge transfer.
文摘There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Radiation Protection） has published new exposure guidelines with regard to these fields. The aim of this paper is to demonstrate the calculation of the currents and electric fields induced in the human body by external electric fields at 60 Hz, using numerical human models of anatomically-realistic human bodies, and to compare those results with the basic restrictions proposed by the new guidelines. As a result, in the case that a human is exposed to an electric field of 1 kV/m at 60 Hz the short-circuit current of 18 μA flows though the ankles. Furthermore, the electric field of 40 mV/m in the nervous tissue of the adult model is induced by exposure to external electric fields at the reference level, which is enough smaller than the basic restrictions established in the ICNIRP guidelines for occupational exposure.
文摘A new dimmer using a mental-oxide-semiconductor field-effect transistor (MOSFET) for alternating-current (AC) directly driven light-emitting-diode (LED) lamp was presented. The control method of proposed dimmer is pulse width control (PWM) method. Compared with the conventional phase-controlled dimmer, the proposed PWM dimmer can produce sine wave and did not cause harmonics problem. Furthermore, the proposed control method did not amplify the light flicker due to the independence of input voltage. Therefore, the PWM dimmer can be used as the dimmer of the AC LED lamp instead of the conventional phase-controlled dimmer. The experimental result shows that the proposed PWM dimmer has good performances.
文摘The optical absorbance in near UV wavelength region in SnO 2 nanoclusters in an external electric field is determined at room temperature. The absorbance spectra as applied field and the absorbance variations with the applied field are obtained.The relation between absorbance change and applied field is non-linear, and is saturated at high field region.
基金Natural Science Foundation of Shanghai Municipal Commission of Education
文摘With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine's ground state energy (-1/4 effective Rydberg) when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.
基金Supported by the Program for Promotion of Fundamental Studies in Health Sciences of the National Institute of Biomedical Innovation,NIBIO
文摘We analytically derive the solutions for electromagnetic fields of electric current dipole moment, which is placed in the exterior of the spherical homogeneous conductor, and is pointed along the radial direction. The dipole moment is driven in the low frequency f = 1 kHz and high frequency f = 1 GHz regimes. The electrical properties of the conductor are appropriately chosen in each frequency. Electromagnetic fields are rigorously formulated at an arbitrary point in a spherical geometry, in which the magnetic vector potential is straightforwardly given by the Biot- Savart formula, and the scalar potential is expanded with the Legendre polynomials, taking into account the appropriate boundary conditions at the spherical surface of the conductor. The induced electric fields are numerically calculated along the several paths in the low and high frequeny excitation. The self-consistent solutions obtained in this work will be of much importance in a wide region of electromagnetic induction problems.
